Cupric Oxide Thin Films for Photovoltaic Applications

2013 ◽  
Vol 1538 ◽  
pp. 185-190
Author(s):  
Patrick J. M. Isherwood ◽  
Biancamaria Maniscalco ◽  
Fabiana Lisco ◽  
Piotr M. Kaminski ◽  
Jake W. Bowers ◽  
...  
Keyword(s):  
Thin Films ◽  
Oxygen Partial Pressure ◽  
Partial Pressure ◽  
Structural Properties ◽  
Cupric Oxide ◽  
Soda Lime ◽  
Soda Lime Glass ◽  
Oxide Thin Films ◽  
Glass Slides ◽  
Increasing Temperature

ABSTRACTCupric oxide thin films were sputtered onto soda-lime glass slides from a single pre-formed ceramic target using a radio-frequency power supply. The effects of oxygen partial pressure and substrate temperature on the optical, electrical and structural properties of the films were studied. It was found that increasing temperature resulted in increased crystallinity and crystal size but also increased film resistivity. The most conductive films were those deposited at room temperature. Increasing oxygen partial pressure was found to reduce resistivity dramatically. This is thought to be due to higher charge carrier concentrations resulting from increased copper vacancies. Increasing oxygen partial pressure causes an increase in the optical band gap from a minimum of 0.8eV up to a maximum of 1.42eV. Oxygen-rich films display reduced crystallinity, becoming increasingly amorphous with increased oxygen content. These results show that the optical, electrical and structural properties of sputtered cupric oxide films can be controlled by alteration of the deposition environment.

Effect of oxygen partial pressure on the tuning of copper oxide thin films by reactive sputtering for solar light driven photocatalysis

Solar Energy ◽  
2019 ◽  
Vol 187 ◽  
pp. 368-378 ◽  
Author(s):  
S. Sai Guru Srinivasan ◽  
B. Govardhanan ◽  
P. Aabel ◽  
M. Ashok ◽  
M.C. Santhosh Kumar
Keyword(s):  
Thin Films ◽  
Oxygen Partial Pressure ◽  
Copper Oxide ◽  
Partial Pressure ◽  
Reactive Sputtering ◽  
Solar Light ◽  
Oxide Thin Films ◽  
Effect Of Oxygen

Lubricity of zinc oxide thin films: Study of deposition parameters and Si as an additive

2001 ◽  
Vol 16 (12) ◽  
pp. 3423-3429 ◽  
Author(s):  
J. J. Nainaparampil ◽  
J. S. Zabinski
Keyword(s):  
Thin Films ◽  
Zinc Oxide ◽  
Oxygen Partial Pressure ◽  
Partial Pressure ◽  
Sample Surface ◽  
Pressure Control ◽  
Oxide Thin Films ◽  
Deposition Parameters ◽  
Good Potential ◽  
Si Doped

Zinc oxide preferentially crystallizes into a wurzite structure and has a unique set of properties. There have been numerous studies on doped zinc oxide thin films as an optical coating or as a semiconductor material. However, very little work has been reported on its tribological properties. Recent reports from this laboratory revealed that ZnO has good potential for controlling friction and wear. ZnO has an open structure and favorable coordination number, which permits zinc to freely move to different positions in the crystal lattice and to accommodate external atoms as substitutes. The nature of the substitution and the concentration of Zn interstitials may be used to control tribological performance. In this work, thin films of zinc oxide were deposited by pulsed laser ablation while silicon was added simultaneously by magnetron sputtering. The effects of deposition geometry and oxygen partial pressure on stoichiometry and microstructure were evaluated. It was found that the angle of deposition and oxygen partial pressure control coating texture. Depositions normal to the sample surface, along with 10 mtorr of oxygen, produced strong (002) texture. These conditions were selected for Si-doping studies. The tribological characteristics of Si-doped coatings were evaluated at both room and high temperature. Addition of Si around 7–8% gave a coefficient of friction of about 0.2 at 300 °C, decreasing to 0.13 around 500 °C.

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