Surface smoothing of glass substrate by irradiation of ionic liquid ion beams

2013 ◽  
Vol 1575 ◽  
Author(s):  
Mitsuaki Takeuchi ◽  
Takuya Hamaguchi ◽  
Hiromichi Ryuto ◽  
Gikan H Takaoka
Keyword(s):  
Ionic Liquid ◽  
Photoelectron Spectroscopy ◽  
Glass Substrate ◽  
Ion Beam ◽  
Mean Value ◽  
Ion Beams ◽  
Negative Ion ◽  
Beam Irradiation ◽  
Surface Smoothing ◽  
Ion Beam Irradiation

ABSTRACTSurface smoothing of a barium borosilicate glass substrate by irradiation of ionic liquid ion beams were investigated. 1-ethyl-3-methylimidaolium tetrafluoroborate (EMIM-BF4) and 1-butyl-3-methylimidazolium hexafluorophosphate (BMIM-PF6) were used for the source liquid. Surface roughness represented as the arithmetic mean value decreased from 0.17 nm to 0.13 nm by the BMIM-PF6 negative ion beam. Secondary electron microscope (SEM) observation for the glass surface irradiated with the BMIM-PF6 negative ion beam showed a clear image without an electrical charge-up, though the EMIM-BF4 negative ion beam irradiated glass yielded a charged up image. X-ray photoelectron spectroscopy (XPS) analysis implied that the surface layer including cation-anion pair of BMIM-PF6 was deposited by the BMIM-PF6 negative ion beam irradiation, while an insulated surface with barium fluoride was formed by the EMIM-BF4 negative ion beam irradiation.

Radiation-induced implantation of polymeric films in metallic substrates

1986 ◽  
Vol 1 (4) ◽  
pp. 577-582
Author(s):  
M.W. Ferralli ◽  
M. Luntz
Keyword(s):  
Film Formation ◽  
Ion Beam ◽  
Ion Beams ◽  
Polymeric Films ◽  
Beam Irradiation ◽  
Ion Beam Irradiation ◽  
Hydrocarbon Gases ◽  
Metallic Substrates ◽  
Radiation Induced ◽  
Stage Process

Implanted, polymeric films have been produced by accelerator-ion-beam irradiation of metallic substrates immersed in hydrocarbon gases. Typical substrates include silver, aluminum, and steel; hydrocarbon gases include 1,3 butadiene and ethylene at 6.6 Pa pressure; ion beams employed include singly ionized H, He, and Ar at 30 keV. Experimental procedures and corrosion-resistance properties of the films are reviewed (each discussed elsewhere). A theory of the film-formation process is presented. It is concluded that the films form as the result of a two-stage process: glow-discharge adhesion and polymerization followed by radiation-induced implantation resulting from collisional recoil and substrate sputtering.

Ion-Beam Irradiation Effect in the Growth Process of Graphene on Silicon Carbide-on-Insulator Substrates

2014 ◽  
Vol 778-780 ◽  
pp. 1170-1173 ◽  
Author(s):  
Motochika Okano ◽  
Daiki Edamoto ◽  
Kentaro Uchida ◽  
Ichiro Omura ◽  
Tomonori Ikari ◽  
...  
Keyword(s):  
Photoelectron Spectroscopy ◽  
Ion Beam ◽  
High Vacuum ◽  
Ultra High Vacuum ◽  
Irradiation Effect ◽  
Beam Irradiation ◽  
Ion Beam Irradiation ◽  
Graphene Layers ◽  
Spectroscopy Studies ◽  
Surface Decomposition

We investigated the effect of ion-beam irradiation of the 3C-SiC(111) surface on the growth of graphene by the SiC surface-decomposition method. When a 3C-SiC(111) surface was irradiated by 1 keV Ar+ions at a dose of 4.5 × 1015cm2in an ultra-high-vacuum chamber and then annealed at 1200 °C for 1 min, the formation of graphene layers was promoted in comparison with that in the absence of ion-beam irradiation. X-ray photoelectron spectroscopy studies showed that Ar ion bombardment of the 3C-SiC(111) caused breakage of surface bonds and helped Si atoms to desorb from the surface.

scholarly journals Spontaneous Pattern Formation from Focused and Unfocused Ion Beam Irradiation

2001 ◽  
Vol 696 ◽  
Author(s):  
Alexandre Cuenat ◽  
Michael J. Aziz
Keyword(s):  
Small Amplitude ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Ion Beams ◽  
The Self ◽  
Self Organization ◽  
Lateral Boundary ◽  
Beam Irradiation ◽  
Ion Beam Irradiation ◽  
Lateral Boundary Conditions

AbstractWe study the formation and self-organization of “ripples” and “dots” spontaneously appearing during uniform irradiation of Si, Ge, and GaSb with energetic ion beams. Features have been produced both with sub-keV unfocused Ar+ ions and with a 30 keV Ga+ Focused Ion Beam. We follow the evolution of features from small amplitude to “nanospikes” with increasing ion dose. It appears that the edge of the sputtered region influences the patterns formed, an effect that may make it possible to guide the self-organization by the imposition of lateral boundary conditions on the sputter instability.

scholarly journals Radiation damage of thin films of YBa2Cu3O7 superconductors

2020 ◽  
Vol 6 ◽  
pp. 271
Author(s):  
R. Vlastou ◽  
E. N. Gazis ◽  
C. T. Papadopoulos ◽  
E. Liarokapis ◽  
D. Palles ◽  
...  
Keyword(s):  
Thin Films ◽  
Phase Transition ◽  
Raman Spectroscopy ◽  
Radiation Damage ◽  
Ion Beam ◽  
Ion Beams ◽  
Beam Irradiation ◽  
Ion Beam Irradiation ◽  
Critical Dose ◽  
Different Doses

The effect of ion-beam irradiation of YBa2Cu3O7 superconductors has been studied by Raman spectroscopy. The ion beams 4He, 16O and 127I have been used eat energies 4, 25 and 200 MeV, respectively, in an attempt to investigate the radi- ation damage with respect to the mass of the bombarding ions, further, different doses of irradiation have been tried for each ion beam in order to investigate at which critical dose the phase transition from crystalline to amorphous and the loss of superconductivity occur.

scholarly journals Effect of Three Types of Ion Beam Irradiation on Gerbera (Gerbera hybrida) In Vitro Shoots with Mutagenesis Efficiency

Plants ◽  
2021 ◽  
Vol 10 (7) ◽  
pp. 1480
Author(s):  
Tomoya Hosoguchi ◽  
Yuna Uchiyama ◽  
Hinata Komazawa ◽  
Masaki Yahata ◽  
Takashi Shimokawa ◽  
...  
Keyword(s):  
Ion Beam ◽  
Ion Beams ◽  
Beam Irradiation ◽  
Ion Beam Irradiation ◽  
Gerbera Hybrida ◽  
Line Energy ◽  
In Vitro Shoots ◽  
Genomic Mutation ◽  
Morphological Mutation

Gerbera in vitro shoots were irradiated using three types of ion beams with different line energy transfers (LETs) to investigate the effective LET and absorbed doses for mutagenesis. Furthermore, genomic mutation analyses were conducted on the obtained mutants. Survival rate analysis showed a lower lethal dose 50% (LD50) with ion beams with higher LETs. Trait/morphological mutations exhibited changes in the color and shape of petals and male sterility. Irradiation conditions with the highest growth change and trait/morphological mutation rates in each ion were C irradiation at 10 Gy, Ar irradiation at 5 Gy, and Fe irradiation at 5 Gy, with a range of absorbed dose of around LD50 to about 10 Gy lower. The highest trait/morphological mutation rate was 14.1% with Ar irradiation at 5 Gy, which was one of the criteria for ion beam irradiation of gerbera in vitro shoots. Furthermore, the genomic mutation in the flower color, petal shape, and male sterile mutants were confirmed by genotype analysis using Genotyping by Random Amplicon Sequencing-Direct technology. This is the first study to report the efficient production of gerbera mutants that could be analyzed. Our findings may lead to more efficient gerbera mutant production and analysis technology.

scholarly journals Spontaneous Pattern Formation from Focused and Unfocused Ion Beam Irradiation

2001 ◽  
Vol 707 ◽  
Author(s):  
Alexandre Cuenat ◽  
Michael J. Aziz
Keyword(s):  
Small Amplitude ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Ion Beams ◽  
The Self ◽  
Self Organization ◽  
Lateral Boundary ◽  
Beam Irradiation ◽  
Ion Beam Irradiation ◽  
Lateral Boundary Conditions

ABSTRACTWe study the formation and self-organization of “ripples” and “dots” spontaneously appearing during uniform irradiation of Si, Ge, and GaSb with energetic ion beams. Features have been produced both with sub-keV unfocused Ar+ ions and with a 30 keV Ga+ Focused Ion Beam. We follow the evolution of features from small amplitude to “nanospikes” with increasing ion dose. It appears that the edge of the sputtered region influences the patterns formed, an effect that may make it possible to guide the self-organization by the imposition of lateral boundary conditions on the sputter instability.

A new system for in-situ observation of dynamic process of structural and chemical changes during dual ion beam irradiation in a 400 Kv Electron Microscope

1990 ◽  
Vol 48 (4) ◽  
pp. 538-539
Author(s):  
Shigemi Furuno ◽  
Kiichi Hojou ◽  
Hitoshu Otsu ◽  
Kazuhiko Izui ◽  
Teikichi Sasaki ◽  
...  
Keyword(s):  
Electron Microscope ◽  
Dynamic Process ◽  
Ion Beam ◽  
Ion Beams ◽  
Observation System ◽  
In Situ Observation ◽  
Beam Irradiation ◽  
Ion Beam Irradiation ◽  
Chemical Changes

In order to simulate radiation damage of fusion reactor materials, we have developed an in-situ observation system in 1986, which consisted of an electron microscope of JEM-100C type combined with a 10 keV ion gun and parallel EELS. Using this system, we have observed dynamic processes of structural and chemical changes of materials during ion irradiation. In this paper, we have developed a new in-situ observation system, with which it is possible to observe dynamic process of structural and chemical changes of materials during dual ion beam irradiation.This system consists of an analytical electron microscope of 4000FX type linked with two 40 keV ion beam accelerators, as shown in fig. 1. The maximum possible ion current on the specimen is 50μA/cm2 for 40keV He ion. Ion beams emmitted from duo-plasmatron ion guns are deflected downward by an angle of 30° with selecting magnet and are introduced into the specimen chamber. Ion beams are deflected downward again by an angle of 30° with electrostatic plism and are incident finally at an angle of 60° with the surface of the specimen, as shown in fig. 2. The images of electron microscope during irradiation are recorded with a VTR through a TV camera. It is possible to control the temperature of the specimen during irradiation within the range from 10 K to 1575 K by using both low and high temperature specimen holders. Test of tension for the specimen under irradiation is also possible. The in-situ chemical analysis in the region of 10 nm under irradiation is possible with EDS (UTW type, Tracor Nothern) and parallel EELS (666 type, Gatan). A quadrapole mass spectrometer is attached near specimen chamber to carry out TDS analysis.

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