The effect of reactive ion etching parameters on the electrical properties and the removal of residual organics in spin-coated colloidal ITO films

2013 ◽  
Vol 1574 ◽  
Author(s):  
Salil M. Joshi ◽  
Rosario A. Gerhardt
Keyword(s):  
Flexible Electronics ◽  
Indium Tin Oxide ◽  
Gas Pressure ◽  
Film Resistivity ◽  
Glass Substrates ◽  
High Electrical Resistivity ◽  
Etching Parameters ◽  
Organic Capping ◽  
Ito Nanoparticles ◽  
Ito Films

ABSTRACTSpheroidal colloidal indium tin oxide (ITO) nanoparticles, about 6 nm in diameter, were synthesized in-house and films were fabricated from them on glass substrates by spin coating. These films had high electrical resistivity due to the presence of organic capping ligands around each nanoparticle. Although high temperature annealing has been shown to reduce film resistivity by over eight orders of magnitude, lower temperature processing is desirable for applications like flexible electronics. Colloidal ITO films were subjected to a series of alternating RIE treatments in oxygen (5 minutes duration per cycle) and in argon (1 minute duration per cycle); and parameters such as gas pressure, RIE power and number of cycles were varied. These RIE treatments were found to reduce the film resistivity significantly. Among the parameters studied, gas pressure during RIE was found to be the most important parameter that determined the effectiveness of the treatment. Residual carbon content variation characterization done by XPS depth profiles also indicated similar trends.

scholarly journals Improving Performance of CIGS Solar Cells by Annealing ITO Thin Films Electrodes

2015 ◽  
Vol 2015 ◽  
pp. 1-8 ◽  
Author(s):  
Chuan Lung Chuang ◽  
Ming Wei Chang ◽  
Nien Po Chen ◽  
Chung Chiang Pan ◽  
Chung Ping Liu
Keyword(s):  
Thin Films ◽  
Optical Properties ◽  
Solar Cells ◽  
Indium Tin Oxide ◽  
Copper Indium Gallium Diselenide ◽  
Glass Substrates ◽  
Ito Film ◽  
Ito Thin Films ◽  
Cigs Solar Cells ◽  
Ito Films

Indium tin oxide (ITO) thin films were grown on glass substrates by direct current (DC) reactive magnetron sputtering at room temperature. Annealing at the optimal temperature can considerably improve the composition, structure, optical properties, and electrical properties of the ITO film. An ITO sample with a favorable crystalline structure was obtained by annealing in fixed oxygen/argon ratio of 0.03 at 400°C for 30 min. The carrier concentration, mobility, resistivity, band gap, transmission in the visible-light region, and transmission in the near-IR regions of the ITO sample were-1.6E+20 cm−3,2.7E+01 cm2/Vs,1.4E-03 Ohm-cm, 3.2 eV, 89.1%, and 94.7%, respectively. Thus, annealing improved the average transmissions (400–1200 nm) of the ITO film by 16.36%. Moreover, annealing a copper-indium-gallium-diselenide (CIGS) solar cell at 400°C for 30 min in air improved its efficiency by 18.75%. The characteristics of annealing ITO films importantly affect the structural, morphological, electrical, and optical properties of ITO films that are used in solar cells.

Properties of Indium Tin Oxide Films Prepared by Two-Targets Magnetron Sputtering

2014 ◽  
Vol 997 ◽  
pp. 337-340
Author(s):  
Jian Guo Chai
Keyword(s):  
Magnetron Sputtering ◽  
Substrate Temperature ◽  
Tin Oxide ◽  
Indium Tin Oxide ◽  
Optical Transmittance ◽  
Visible Range ◽  
Glass Substrates ◽  
Optimized Conditions ◽  
Tin Oxide Films ◽  
Ito Films

Indium tin oxide (ITO) films were deposited on glass substrates by magnetron sputtering. Properties of ITO films showed a dependence on substrate temperature. With an increasing in substrate temperature, the intensity of XRD peak increased and the grain size showed an evident increasing. The results show that increasing substrate temperature remarkably improves the characteristics of the films. The sheet resistance of 10 Ω/sq and the maximum optical transmittance of 90% in the visible range with optimized conditions can be achicved. The results of experiment demonstrate that high-quality films have been achieved by this technique.

Structural and Optical Properties of InSnO3 Sol-Gel Coatings to Use in Windows Glass Buildings

2010 ◽  
Vol 168-170 ◽  
pp. 2348-2351
Author(s):  
Lazaro De Jesus Dominguez Gallegos ◽  
Angélica Silvestre López Rodríguez ◽  
Pio Sifuentes Gallardo ◽  
Miguel Angel Hernández Rivera ◽  
María Guadalupe Garnica Romo ◽  
...  
Keyword(s):  
Optical Properties ◽  
Indium Tin Oxide ◽  
Sol Gel ◽  
Visible Region ◽  
Optical Transmittance ◽  
Indium Chloride ◽  
Glass Substrates ◽  
Tin Chloride ◽  
Ito Thin Films ◽  
Ito Films

Indium stannate (InSnO3) films doping with small amounts of copper are made highly useful as architectural window coatings. Indium-tin-oxide (ITO) has attracted intense interest due to some of its unique characteristics; it has high optical transmittance in the visible region, low electric resistivity, and chemical stability. Therefore, ITO thin films have been found to play an important role in opto-electronic applications. In this work, uniform and transparent ITO films were deposited onto glass substrates using a sol-gel process. The initial sols were prepared by mixing solutions of indium chloride prepared in anhydrous ethanol with tin chloride and mechanically stirring and refluxed 2 hours and aged 2 week, the resultant mixture until a clear and sticky coating sol was obtained. The glass substrates were spin-coated and annealed at 500 °C. Because annealing conditions affect the microstructures, the properties of the resultant ITO films can be controlled. The optical transmittance of 200 nm thick ITO film was more than 80% in the visible region. The surface morphology examined by SEM appears to be uniform over large surface areas. The structural, microstructural and optical properties of the coatings and powders made from the sols were extensively characterized by using XRD, AFM and spectrophotometer techniques

PREPARATION AND CHARACTERIZATION OF TRANSPARENT CONDUCTIVE Ta-DOPED ITO FILMS BY ELECTRON-BEAM EVAPORATION

2010 ◽  
Vol 24 (32) ◽  
pp. 3089-3095 ◽  
Author(s):  
J. Y. HUANG ◽  
G. H. FAN ◽  
T. MEI ◽  
S. W. ZHENG ◽  
Q. L. NIU ◽  
...  
Keyword(s):  
Electron Beam ◽  
Indium Tin Oxide ◽  
Optical Transmittance ◽  
Electron Beam Evaporation ◽  
X Ray Diffraction ◽  
Glass Substrates ◽  
Conductive Films ◽  
Atomic Force ◽  
Average Optical Transmittance ◽  
Ito Films

Tantalum-doped indium tin oxide ( Ta -doped ITO) transparent conductive films are deposited on glass substrates by electron-beam evaporation. The effects of different Ta concentrations and annealing temperatures on the structural, morphologic, electrical, and optical properties of Ta -doped ITO films are investigated by X-ray diffraction (XRD), atomic force microscope (AFM), Hall measurement, and optical transmission spectroscopy. The obtained films are polycrystalline with a cubic bixbyite structure of indium oxide and preferentially oriented in the (222) crystallographic direction. The minimum resistivity of 1.54×10-4 Ω ·cm is obtained from the ITO film containing 0.2 wt% tantalum annealed at 500°C and the average optical transmittance is over 95% from 425 nm to 460 nm.

scholarly journals Pulsed Laser Deposition of Indium Tin Oxide Thin Films on Nanopatterned Glass Substrates

Coatings ◽  
2018 ◽  
Vol 9 (1) ◽  
pp. 19 ◽  
Author(s):  
Marcela Socol ◽  
Nicoleta Preda ◽  
Oana Rasoga ◽  
Andreea Costas ◽  
Anca Stanculescu ◽  
...  
Keyword(s):  
Thin Films ◽  
Pulsed Laser Deposition ◽  
Tin Oxide ◽  
Indium Tin Oxide ◽  
Nanoimprint Lithography ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Periodic Patterns ◽  
Glass Substrates ◽  
Ito Films

Indium tin oxide (ITO) thin films were grown on nanopatterned glass substrates by the pulsed laser deposition (PLD) technique. The deposition was carried out at 1.2 J/cm2 laser fluence, low oxygen pressure (1.5 Pa) and on unheated substrate. Arrays of periodic pillars with widths of ~350 nm, heights of ~250 nm, and separation pitches of ~1100 nm were fabricated on glass substrates using UV nanoimprint lithography (UV-NIL), a simple, cost-effective, and high throughput technique used to fabricate nanopatterns on large areas. In order to emphasize the influence of the periodic patterns on the properties of the nanostructured ITO films, this transparent conductive oxide (TCO) was also grown on flat glass substrates. Therefore, the structural, compositional, morphological, optical, and electrical properties of both non-patterned and patterned ITO films were investigated in a comparative manner. The energy dispersive X-ray analysis (EDX) confirms that the ITO films preserve the In2O3:SnO2 weight ratio from the solid ITO target. The SEM and atomic force microscopy (AFM) images prove that the deposited ITO films retain the pattern of the glass substrates. The optical investigations reveal that patterned ITO films present a good optical transmittance. The electrical measurements show that both the non-patterned and patterned ITO films are characterized by a low electrical resistivity (<2.8 × 10−4). However, an improvement in the Hall mobility was achieved in the case of the nanopatterned ITO films, evidencing the potential applications of such nanopatterned TCO films obtained by PLD in photovoltaic and light emitting devices.

Study of annealed Indium Tin Oxide Films Prepared by RF Reactive Magnetron Sputtering

1995 ◽  
Vol 388 ◽  
Author(s):  
Li-Jian Meng ◽  
A. Maçarico ◽  
R. Martins
Keyword(s):  
Magnetron Sputtering ◽  
Indium Tin Oxide ◽  
Annealing Temperature ◽  
Light Trapping ◽  
Film Surface ◽  
Reactive Magnetron Sputtering ◽  
Reactive Magnetron ◽  
Glass Substrates ◽  
Deposited Film ◽  
Ito Films

AbstractTin doped indium oxide (ITO) films were deposited on glass substrates by rf reactive magnetron sputtering using a metallic alloy target (In-Sn, 90-10). the post-deposition annealing has been done for ITO films in air and the effect of annealing temperature on the electrical, optical and structural properties of ITO films was studied. It has been found that the increase of the annealing temperature will improve the film electrical properties. the resistivity of as-deposited film is about 1.3 х 10-1 Ω*cm and decreases down to 6.9 х 10-3Ω*cm as the annealing temperature is increased up to 500 °C. IN addition, the annealing will also increase the film surface roughness which can improve the efficiency of amorphous silicon solar cells by increasing the amount of light trapping.

Annealing effect on indium tin oxide thin films by DC magnetron sputtering for alkali vapor cell heating

2019 ◽  
Vol 33 (16) ◽  
pp. 1950178
Author(s):  
Jianhua Li ◽  
Zhiyuan Jiang ◽  
Pingwei Lin ◽  
Xinhua Chen ◽  
Lin Zhong ◽  
...  
Keyword(s):  
Thin Films ◽  
Indium Tin Oxide ◽  
Annealing Effect ◽  
Vapor Cell ◽  
Glass Substrates ◽  
Ito Film ◽  
Different Temperatures ◽  
Ito Thin Films ◽  
Predominant Orientation ◽  
Ito Films

This paper reports the annealing effect on the DC sputter transparent conducting tin-doped indium oxide (ITO) films for the alkali vapor cell heater of the chip-scale atomic sensors. ITO films with a thickness of 140 nm were deposited on BF33 glass substrates at [Formula: see text], followed by an annealing process in N2 atmosphere for 2 h at different temperatures between [Formula: see text] and [Formula: see text]. The effect of annealing on the crystal structure, surface morphology, optical, and electrical properties of ITO films was characterized. The predominant orientation of crystal face of the as-deposited and annealed ITO thin films was (222) instead of (400). After annealing at [Formula: see text] the ITO film exhibits the highest transmittance ([Formula: see text][Formula: see text]90%) to the lights at the wavelength of 780 nm, 795 nm and 894 nm regarding the probe light in a chip scale atomic device. Besides, the lowest sheet resistance and resistivity were obtained as 27.8 [Formula: see text] and [Formula: see text] separately. The refractive index and extinction coefficients results verified the crystal orientation and the transmittance results. This thin ITO film was expected to be the best candidate for the transparent heater in the chip scale atomic devices.

Properties of Polymer Light Emitting Diodes with Blue Color on ITO/Glass Substrates

2007 ◽  
Vol 124-126 ◽  
pp. 439-442 ◽  
Author(s):  
Jae Hyouk Yoo ◽  
Su Cheol Gong ◽  
In Jae Baek ◽  
Hyun Seong Lim ◽  
Sang Baie Shin ◽  
...  
Keyword(s):  
Plasma Treatment ◽  
Indium Tin Oxide ◽  
Light Emitting Diodes ◽  
Oxide Glass ◽  
Blue Color ◽  
Light Emitting ◽  
Glass Substrates ◽  
Ito Glass ◽  
Polymer Light Emitting Diodes ◽  
Ito Films

Polymer light emitting diodes (PLEDs) with ITO/PEDOT:PSS/PVK/PFO-poss/LiF/Al structure were prepared by spin coating method on the plasma-treated ITO(indium tin oxide)/glass substrates. PVK(N-vinylcabozole) and PEDOT:PSS [poly(3,4-ethylenedioxythiophene):poly(styrene sulfolnate)] polymers were used as hole injection and transport materials. As blue light emitting material, PFO-poss(poly(9,9-dioctylfluorence) polymer was used. The dependence of the plasma treatment of ITO films on the optical and electrical properties of the PLEDs was investigated. The sheet resistance of ITO films increased slightly with increasing the plasma intensity from 20W to 300W in RF power. In contrast, the surface roughness was improved as the plasma intensity increased. The maximum current density and luminance were about 20 mA/cm2 and 250 cd/m2 at 9 V for the PLED sample coated on ITO/glass substrate with plasma treatment of 100W for 30s under 40 mtorr O2 pressure. The maximum emission spectrum of the PLEDs was 441 nm showing blue color.

Transparent Conducting ITO Films Reactively Sputtered on Polyethylene Terephtalate Substrates Without Heat Treatment

2003 ◽  
Vol 17 (08n09) ◽  
pp. 1242-1247 ◽  
Author(s):  
Hyun Hoo Kim ◽  
Moo Young Lee ◽  
Kwang Tae Kim ◽  
Sahng Hyun Yoon
Keyword(s):  
Indium Tin Oxide ◽  
Optical Transmittance ◽  
Working Pressure ◽  
Glass Substrates ◽  
Dc Power ◽  
Transparent Conducting ◽  
Polyethylene Terephtalate ◽  
Dc Reactive Magnetron Sputtering ◽  
Post Deposition ◽  
Ito Films

Indium tin oxide (ITO) films have been deposited on PET and glass substrates by DC reactive magnetron sputtering without post-deposition thermal treatment. High quality films have been deposited by optimizing the sputtering parameters. The influence of the working gas pressure, DC power, and oxygen partial pressure has been investigated. The lowest resistivity of ITO films deposited on PET substrates was 6×10-4Ωcm. It has been obtained at a working pressure of 3 mTorr and DC power of 30 W. The sheet resistance and optical transmittance of these films were 22 Ω/square and 84%, respectively. The best values of figures of merit for the electrical and optical chardcteristics such as T / R sh and T 10/ R sh are approximately 38.1 and 7.95 (×10-3 Ω-1), respectively.

PREPARATION AND CHARACTERIZATION OF INDIUM OXIDE AND INDIUM TIN OXIDE FILMS BY ACTIVATED REACTIVE EVAPORATION

2006 ◽  
Vol 13 (02n03) ◽  
pp. 221-225 ◽  
Author(s):  
K. NARASIMHA RAO ◽  
SANJAY KASHYAP
Keyword(s):  
Indium Oxide ◽  
Tin Oxide ◽  
Indium Tin Oxide ◽  
Oxide Films ◽  
Electron Gun ◽  
Glass Substrates ◽  
Reactive Evaporation ◽  
Deposition Parameters ◽  
Activated Reactive Evaporation ◽  
Ito Films

Transparent and conducting oxide films find many applications because of their excellent properties such as high optical transparency, low surface resistance, high infrared reflectance, etc. Realization of these properties depend upon the choice of the deposition technique and the control of deposition parameters. In this paper, we report the preparation of highly transparent and conducting films of indium oxide ( In 2 O 3) and indium tin oxide (ITO) by activated reactive evaporation on glass substrates. These films were deposited by evaporating pure indium and 90% In + 10% Sn alloy using an electron gun in the presence of oxygen ions at ambient temperature. Films of different thickness have been prepared and their optical, electrical and structural properties are studied. In 2 O 3 films showed higher transparency (90%) compared to ITO films (85%) but the electrical resistivity was observed to be little higher (2.5 × 10-3 Ω cm) compared to ITO films (6 × 10-4 Ωcm). Hall measurements on aged ITO films gave the charge density of 3 × 1020 per cm3 and mobility 35.6 cm2/V-s. The refractive index and extinction coefficient were found to be around 2.0 and 0.005 for ITO films and 2.10 and 0.001 for In 2 O 3 films at 550 nm respectively. ITO and In 2 O 3 films were amorphous in nature for lesser thickness, but for thicker films, the partial crystallinity was observed.

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