Hybrid III-V-on-Silicon Microring Lasers

2013 ◽  
Vol 1538 ◽  
pp. 363-369
Author(s):  
Di Liang ◽  
Géza Kurczveil ◽  
Marco Fiorentino ◽  
Sudharsanan Srinivasan ◽  
David A. Fattal ◽  
...  
Keyword(s):  
Integrated Circuits ◽  
Wavelength Division Multiplexing ◽  
High Performance ◽  
Large Scale ◽  
Laser Cavity ◽  
Silicon On Insulator ◽  
Wavelength Division ◽  
Hybrid Iii ◽  
Hybrid Silicon ◽  
Silicon Based

ABSTRACTHybrid silicon laser is a promising solution to enable high-performance light source on large-scale, silicon-based photonic integrated circuits (PICs). As a compact laser cavity design, hybrid microring lasers are attractive for their intrinsic advantages of small footprint, low power consumption and flexibility in wavelength division multiplexing (WDM), etc. Here we review recent progress in unidirectional microring lasers and device thermal management. Unidirectional emission is achieved by integrating a passive reflector that feeds laser emission back into laser cavity to introduce extra unidirectional gain. Up to 4X of device heating reduction is simulated by adding a metal thermal shunt to the laser to “short” heat to the silicon substrate through buried oxide layer (BOX) in the silicon-on-insulator (SOI) substrate. Obvious device heating reduction is also observed in experiment.

scholarly journals Integrated On-Chip Nano-Optomechanical Systems

2017 ◽  
Vol 26 (01n02) ◽  
pp. 1740005 ◽  
Author(s):  
Zhu Diao ◽  
Vincent T. K. Sauer ◽  
Wayne K. Hiebert
Keyword(s):  
Wavelength Division Multiplexing ◽  
Large Scale ◽  
Near Field ◽  
Optical Cavity ◽  
Mechanical Device ◽  
Optomechanical Systems ◽  
Wavelength Division ◽  
Recent Developments ◽  
On Chip ◽  
Silicon Based

Recent developments in integrated on-chip nano-optomechanical systems are reviewed. Silicon-based nano-optomechanical devices are fabricated by a two-step process, where the first step is a foundry-enabled photonic circuits patterning and the second step involves in-house mechanical device release. We show theoretically that the enhanced responsivity of near-field optical transduction of mechanical displacement in on-chip nano-optomechanical systems originates from the finesse of the optical cavity to which the mechanical device couples. An enhancement in responsivity of more than two orders of magnitude has been observed when compared side-by-side with free-space interferometry readout. We further demonstrate two approaches to facilitate large-scale device integration, namely, wavelength-division multiplexing and frequency-division multiplexing. They are capable of significantly simplifying the design complexity for addressing individual nano-optomechanical devices embedded in a large array.

Implementing DWDM Lambda-Grids

2009 ◽  
pp. 661-667
Author(s):  
Marlyn Kemper Littman
Keyword(s):  
Wavelength Division Multiplexing ◽  
Digital Libraries ◽  
Nuclear Physics ◽  
High Performance ◽  
Large Scale ◽  
Complex Problem ◽  
Massive Datasets ◽  
Wavelength Division ◽  
Performance Guarantees ◽  
Shared Network

Unprecedented demand for ultrafast and dependable access to computing Grids contributes to the accelerating use of dense wavelength division multiplexing (DWDM) technology as a Lambda-Grid enabler. In the Lambda-Grid space, the DWDM infrastructure provisions dynamic lambdas or wavelengths of light ondemand to support terabyte and petabyte transmission rates; seamless access to large-scale aggregations of feature-rich resources; and extendible Grid and inter- Grid services with predictable performance guarantees (Boutaba, Golab, Iraqi, Li, & St. Arnaud, 2003). DWDM Lambda-Grids consist of shared network components that include interconnected federations of other Grids, dense collections of computational simulations, massive datasets, specialized scientific instruments, metadata repositories, large-scale storage systems, digital libraries, and clusters of supercomputers (Naiksatam, Figueira, Chiappari, & Bhatnagar, 2005). As a consequence of the convergence of remarkable advances in DWDM technology and high-performance computing, Lambda-Grids support complex problem resolution in fields that include seismology, neuroscience, bioinformatics, chemistry, and nuclear physics. This chapter begins with a discussion of Grid development and DWDM technical fundamentals. In the sections that follow, the role of the virtual organization (VO) in establishing and supporting DWDM Lambda-Grid initiatives; capabilities of the Globus Toolkit (GT) in facilitating Lambda-Grid construction; distinguishing characteristics of Lambda-Grid operations, architectures, and protocols; and major Web services (WS) specifications in the Lambda-Grid space are examined. Descriptions of DWDM Lambda- Grid initiatives and security challenges associated with DWDM Lambda-Grid implementations are presented. Finally, trends in DWDM Lambda-Grid research are introduced.

The Structure and Properties of MoSi2 Thin Film in Mos Process

1980 ◽  
Vol 38 ◽  
pp. 326-327
Author(s):  
C.K. Wu ◽  
P. Chang ◽  
N. Godinho
Keyword(s):  
Thin Film ◽  
Integrated Circuits ◽  
High Performance ◽  
Large Scale ◽  
Process Development ◽  
Structure And Properties ◽  
Metal Silicides ◽  
High Oxidation ◽  
Important Approach ◽  
High Oxidation Resistance

Recently, the use of refractory metal silicides as low resistivity, high temperature and high oxidation resistance gate materials in large scale integrated circuits (LSI) has become an important approach in advanced MOS process development (1). This research is a systematic study on the structure and properties of molybdenum silicide thin film and its applicability to high performance LSI fabrication.

scholarly journals A Review on Terahertz Technologies Accelerated by Silicon Photonics

Nanomaterials ◽  
2021 ◽  
Vol 11 (7) ◽  
pp. 1646
Author(s):  
Jingya Xie ◽  
Wangcheng Ye ◽  
Linjie Zhou ◽  
Xuguang Guo ◽  
Xiaofei Zang ◽  
...  
Keyword(s):  
Integrated Circuit ◽  
Silicon Photonics ◽  
Large Scale ◽  
Cost Effective ◽  
Single Chip ◽  
Photonic Integrated Circuit ◽  
Hybrid Silicon ◽  
The Cost ◽  
Silicon Based ◽  
Thz Applications

In the last couple of decades, terahertz (THz) technologies, which lie in the frequency gap between the infrared and microwaves, have been greatly enhanced and investigated due to possible opportunities in a plethora of THz applications, such as imaging, security, and wireless communications. Photonics has led the way to the generation, modulation, and detection of THz waves such as the photomixing technique. In tandem with these investigations, researchers have been exploring ways to use silicon photonics technologies for THz applications to leverage the cost-effective large-scale fabrication and integration opportunities that it would enable. Although silicon photonics has enabled the implementation of a large number of optical components for practical use, for THz integrated systems, we still face several challenges associated with high-quality hybrid silicon lasers, conversion efficiency, device integration, and fabrication. This paper provides an overview of recent progress in THz technologies based on silicon photonics or hybrid silicon photonics, including THz generation, detection, phase modulation, intensity modulation, and passive components. As silicon-based electronic and photonic circuits are further approaching THz frequencies, one single chip with electronics, photonics, and THz functions seems inevitable, resulting in the ultimate dream of a THz electronic–photonic integrated circuit.

Recent Progress in SOI Materials and Devices for VLSI Applications

1993 ◽  
Vol 316 ◽  
Author(s):  
H. H. Hosack
Keyword(s):  
High Performance ◽  
Large Scale ◽  
Recent Progress ◽  
Low Voltage ◽  
Silicon On Insulator ◽  
Significant Interest ◽  
Significant Performance ◽  
Cmos Ic ◽  
Bulk Processing ◽  
Soi Technology

Silicon-On-Insulator (SOI) technology [1-4] has been shown to have significant performance and fabrication advantages over conventional bulk processing for a wide variety of large scale CMOS IC applications. Advantages in radiation environments has generated significant interest in this technology from military and space science communities [5,6]. Possible advantages of SOI technology for low power, low voltage and high performance circuit applications is under serious consideration by several commercial IC manufacturers [7,8].

Diffusion of Silicon Interstitials in thin Silicon Films on Insulator in Neutral and Oxidising Annealing Ambients

1997 ◽  
Vol 469 ◽  
Author(s):  
Guénolé C.M. Silvestre
Keyword(s):  
Integrated Circuits ◽  
High Performance ◽  
Annealing Treatment ◽  
Silicon On Insulator ◽  
Buried Oxide ◽  
Thermal Oxide ◽  
Good Crystalline Quality ◽  
Thin Silicon ◽  
Experimental Values ◽  
Fault Growth

ABSTRACTSilicon-On-Insulator (SOI) materials have emerged as a very promising technology for the fabrication of high performance integrated circuits since they offer significant improvement to device performance. Thin silicon layers of good crystalline quality are now widely available on buried oxide layers of various thicknesses with good insulating properties. However, the SOI structure is quite different from that of bulk silicon. This paper will discuss a study of point-defect diffusion and recombination in thin silicon layers during high temperature annealing treatment through the investigation of stacking-fault growth kinetics. The use of capping layers such as nitride, thin thermal oxide and thick deposited oxide outlines the diffusion mechanisms of interstitials in the SOI structure. It also shows that the buried oxide layer is a very good barrier to the diffusion of point defects and that excess silicon interstitials may be reincorporated at the top interface with the thermal oxide through the formation of SiO species. Finally, from the experimental values of the activation energies for the growth and the shrinkage of stacking-faults, the energy of interstitial creation is evaluated to be 2.6 eV, the energy for interstitial migration to be 1.8 eV and the energy of interstitial generation during oxidation to be 0.2 eV.

scholarly journals Thermo-Optic Tunable Optical Filter Based on Fabry-Perot Microcavities in SOI

2012 ◽  
Vol 6-7 ◽  
pp. 194-199
Author(s):  
Zhe Li ◽  
Hua Juan Qi ◽  
Yong Chuan Xiao ◽  
Feng Li Gao
Keyword(s):  
Refractive Index ◽  
Wavelength Division Multiplexing ◽  
Optical Filter ◽  
Silicon On Insulator ◽  
Central Wavelength ◽  
Wavelength Division ◽  
Tunable Optical Filter ◽  
Compact Size ◽  
Fabry Perot ◽  
Output Characteristics

An integrated TOF (Tunable Optical Filter) based on thermo-optic effect in Silicon on insulator (SOI) rib waveguide is designed and simulated. The device is comprised of two high refractivity contrast Si/Air stacks, functioning as high reflectivity of DBRs and separated by a variable refractive index Si F-P cavity. The output characteristics are calculated and simulated based on Transfer Matrix Method (TMM). Wavelength tuning is achieved through thermal modulation of refractive variation of the cavity.As the cavity Si is heated,the refractive index of the cavity increases.When the temperature of cavity Si changes within100°C，the central wavelength gets a continuous 8nm shift from 1550nm to 1558nm, which is right located in the WDM (Wavelength division multiplexing) networks operating at C-band. Moreover, by calculating, the tuning sensitivity is about 0.08nm/°C. Owing to the compact size and excellent characteristics of integration, the proposed component has a promising utilization in spectroscopy and optical communication.

Sign in / Sign up

Export Citation Format

Share Document