Photoluminescence variation in InAs Quantum dots embedded in InGaAs/AlGaAs Quantum wells at thermal annealing

2013 ◽  
Vol 1534 ◽  
pp. A81-A86
Author(s):  
I. J. Guerrero Moreno ◽  
G. Polupan ◽  
J.L. Casas Espinola
Keyword(s):  
Quantum Dots ◽  
Quantum Wells ◽  
Thermal Annealing ◽  
Electronic Format ◽  
Inas Quantum Dots

Papers in the Appendix were published in electronic format as Volume 1534

Emission and X ray diffraction in AlGaAs/ InGaAs Quantum wells with embedded InAs Quantum dots

2013 ◽  
Vol 1617 ◽  
pp. 43-48
Author(s):  
R. Cisneros Tamayo ◽  
I.J. Gerrero Moreno ◽  
A. Vivas Hernandez ◽  
J.L. Casas Espinola ◽  
L. Shcherbyna
Keyword(s):  
Quantum Dots ◽  
Quantum Wells ◽  
Thermal Annealing ◽  
Peak Position ◽  
Thermal Treatments ◽  
X Ray Diffraction ◽  
Inas Quantum Dots ◽  
X Ray ◽  
Prepared State ◽  
Temperature Dependences

ABSTRACTThe photoluminescence (PL), its temperature dependence and X-ray diffraction (XRD) have been studied in MBE grown GaAs/AlGaAs/InGaAs/AlGaAs /GaAs quantum wells (QWs) with InAs quantum dots embedded in the center of InGaAs layer in the freshly prepared states and after the thermal treatments during 2 hours at 640 or 710 °C. The structures contained two buffer (Al0.3Ga0.7As/In0.15Ga0.85As) and two capping (In0.15Ga0.85As / Al0.3Ga0.7As) layers. The temperature dependences of PL peak positions have been analyzed in the temperature range 10-500K with the aim to investigate the QD composition and its variation at thermal annealing. The experimental parameters of the temperature variation of PL peak position in the InAs QDs have been compared with the known one for the bulk InAs crystals and the QD composition variation due to Ga/Al/In inter diffusion at thermal treatments has been detected. XRD have been studied with the aim to estimate the capping/buffer layer compositions in the different QW layers in freshly prepared state and after the thermal annealing. The obtained emission and XRD data and their dependences on the thermal treatment have been analyzed and discussed.

Photoluminescence spectrum Dependences on Temperature and Excitation power in InAs Quantum dots embedded in InGaAs/GaAs Quantum wells

2013 ◽  
Vol 1534 ◽  
pp. A69-A74
Author(s):  
Alejandro Vivas Hernandez ◽  
Erick Velázquez Lozada ◽  
Ingri J. Guerrero Moreno
Keyword(s):  
Quantum Dots ◽  
Quantum Wells ◽  
Photoluminescence Spectrum ◽  
Excitation Power ◽  
Electronic Format ◽  
Inas Quantum Dots

Papers in the Appendix were published in electronic format as Volume 1534

Comparative study of Photoluminescence variation in InAs Quantum dots embedded in InAlGaAs Quantum wells

2013 ◽  
Vol 1534 ◽  
pp. A51-A56
Author(s):  
J.L. Casas Espinola ◽  
T.V. Torchynska ◽  
L. D. Cruz. Diosdado ◽  
G. Polupan
Keyword(s):  
Quantum Dots ◽  
Comparative Study ◽  
Quantum Wells ◽  
Electronic Format ◽  
Inas Quantum Dots

Papers in the Appendix were published in electronic format as Volume 1534

Effects of Rapid Thermal Annealing on the Optical Properties of InAs Quantum Dots with Asymmetric InGaAs Layers

2009 ◽  
Vol 54 (4) ◽  
pp. 1655-1659 ◽  
Author(s):  
Do Yeob Kim ◽  
Min Su Kim ◽  
Tae Hoon Kim ◽  
Ghun Sik Kim ◽  
Hyun Young Choi ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Optical Properties ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Inas Quantum Dots

Mid-Infrared Photodetector Using Self-Assembled InAs Quantum Dots Embedded in Modulation-Doped GaAs Quantum Wells

1999 ◽  
Vol 607 ◽  
Author(s):  
Seung-Woong Lee ◽  
Kazuhiko Hirakawa ◽  
Yozo Shimada
Keyword(s):  
Quantum Dots ◽  
Quantum Wells ◽  
High Mobility ◽  
Normal Incidence ◽  
Infrared Photodetector ◽  
Inas Quantum Dots ◽  
Operation Temperature ◽  
Long Lifetime ◽  
Quantum Dot Infrared Photodetector ◽  
Self Assembled

AbstractWe have designed and fabricated a quantum dot infrared photodetector which utilizes lateral transport of photoexcited carriers in the modulation-doped A1GaAs/GaAs two-dimensional (2D) channels. A broad photocurrent signal has been observed in the photon energy range of 100–300 meV due to bound-to-continuum intersubband absorption of normal incidence radiation in the self-assembled InAs quantum dots. A peak responsivity was as high as 2.3 A/W. The high responsivity is realized mainly by a high mobility and a long lifetime of photoexcited carriers in the modulation-doped 2D channels. Furthermore, we found that this device has high operation temperature and very high photoconductive gain.

Emission of InAs quantum dots embedded in InGaAs/InAlGaAs/GaAs quantum wells

2014 ◽  
Vol 149 ◽  
pp. 1-6 ◽  
Author(s):  
R. Cisneros Tamayo ◽  
I.J. Guerrero Moreno ◽  
G. Polupan ◽  
T.V. Torchynska ◽  
J. Palacios Gomez
Keyword(s):  
Quantum Dots ◽  
Quantum Wells ◽  
Inas Quantum Dots

Photoluminescence of InAs quantum dots embedded in AlGaAs/InGaAs quantum wells with strain reducing layer

2014 ◽  
Vol 71 ◽  
pp. 168-176 ◽  
Author(s):  
R. Cisneros Tamayo ◽  
T.V. Torchynska ◽  
G. Polupan ◽  
I.J. Guerrero Moreno ◽  
E. Velázquez Lozada ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Quantum Wells ◽  
Inas Quantum Dots

Emission and strain in InGaAs/GaAs quantum wells with InAs quantum dots obtained at different temperatures

2012 ◽  
Vol 52 (4) ◽  
pp. 844-850
Author(s):  
R.L. Mascorro Alquicira ◽  
J.L. Casas Espinola ◽  
E. Velázquez Lozada ◽  
G. Polupan ◽  
L. Shcherbyna
Keyword(s):  
Quantum Dots ◽  
Quantum Wells ◽  
Inas Quantum Dots ◽  
Different Temperatures
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