Investigation of carrier dynamics on InAs quantum dots embedded in InGaAs∕GaAs quantum wells based on time-resolved pump and probe differential photoluminescence

2006 ◽  
Vol 89 (18) ◽  
pp. 181924 ◽  
Author(s):  
Xiaodong Mu ◽  
Yujie J. Ding ◽  
Boon S. Ooi ◽  
Mark Hopkinson
Keyword(s):  
Quantum Dots ◽  
Quantum Wells ◽  
Carrier Dynamics ◽  
Time Resolved ◽  
Inas Quantum Dots ◽  
Pump And Probe

Time Resolved Studies of Proton Irradiated Quantum Dots

2002 ◽  
Vol 722 ◽  
Author(s):  
Saulius Marcinkevičius ◽  
Rosa Leon ◽  
Charlene Lobo ◽  
Brian Magness ◽  
William Taylor
Keyword(s):  
Quantum Dots ◽  
Quantum Wells ◽  
Proton Irradiation ◽  
Three Dimensional ◽  
Carrier Dynamics ◽  
Time Resolved ◽  
Carrier Lifetimes ◽  
Dot Density ◽  
Gaas Quantum Dot ◽  
Time Resolved Photoluminescence

AbstractThe effects of proton irradiation on carrier dynamics were measured by time-resolved photoluminescence on InGaAs/GaAs quantum dot structures with different dot density and substrate orientation, as well as on InAlAs/AlGaAs quantum dots. Results were compared to irradiation effects on carrier dynamics in thin InGaAs quantum wells. We find that carrier lifetimes in QDs are much less affected by proton irradiation than in quantum wells, which can be attributed to the three-dimensional carrier confinement in quantum dots.

Emission and X ray diffraction in AlGaAs/ InGaAs Quantum wells with embedded InAs Quantum dots

2013 ◽  
Vol 1617 ◽  
pp. 43-48
Author(s):  
R. Cisneros Tamayo ◽  
I.J. Gerrero Moreno ◽  
A. Vivas Hernandez ◽  
J.L. Casas Espinola ◽  
L. Shcherbyna
Keyword(s):  
Quantum Dots ◽  
Quantum Wells ◽  
Thermal Annealing ◽  
Peak Position ◽  
Thermal Treatments ◽  
X Ray Diffraction ◽  
Inas Quantum Dots ◽  
X Ray ◽  
Prepared State ◽  
Temperature Dependences

ABSTRACTThe photoluminescence (PL), its temperature dependence and X-ray diffraction (XRD) have been studied in MBE grown GaAs/AlGaAs/InGaAs/AlGaAs /GaAs quantum wells (QWs) with InAs quantum dots embedded in the center of InGaAs layer in the freshly prepared states and after the thermal treatments during 2 hours at 640 or 710 °C. The structures contained two buffer (Al0.3Ga0.7As/In0.15Ga0.85As) and two capping (In0.15Ga0.85As / Al0.3Ga0.7As) layers. The temperature dependences of PL peak positions have been analyzed in the temperature range 10-500K with the aim to investigate the QD composition and its variation at thermal annealing. The experimental parameters of the temperature variation of PL peak position in the InAs QDs have been compared with the known one for the bulk InAs crystals and the QD composition variation due to Ga/Al/In inter diffusion at thermal treatments has been detected. XRD have been studied with the aim to estimate the capping/buffer layer compositions in the different QW layers in freshly prepared state and after the thermal annealing. The obtained emission and XRD data and their dependences on the thermal treatment have been analyzed and discussed.

Mid-Infrared Photodetector Using Self-Assembled InAs Quantum Dots Embedded in Modulation-Doped GaAs Quantum Wells

1999 ◽  
Vol 607 ◽  
Author(s):  
Seung-Woong Lee ◽  
Kazuhiko Hirakawa ◽  
Yozo Shimada
Keyword(s):  
Quantum Dots ◽  
Quantum Wells ◽  
High Mobility ◽  
Normal Incidence ◽  
Infrared Photodetector ◽  
Inas Quantum Dots ◽  
Operation Temperature ◽  
Long Lifetime ◽  
Quantum Dot Infrared Photodetector ◽  
Self Assembled

AbstractWe have designed and fabricated a quantum dot infrared photodetector which utilizes lateral transport of photoexcited carriers in the modulation-doped A1GaAs/GaAs two-dimensional (2D) channels. A broad photocurrent signal has been observed in the photon energy range of 100–300 meV due to bound-to-continuum intersubband absorption of normal incidence radiation in the self-assembled InAs quantum dots. A peak responsivity was as high as 2.3 A/W. The high responsivity is realized mainly by a high mobility and a long lifetime of photoexcited carriers in the modulation-doped 2D channels. Furthermore, we found that this device has high operation temperature and very high photoconductive gain.

Emission of InAs quantum dots embedded in InGaAs/InAlGaAs/GaAs quantum wells

2014 ◽  
Vol 149 ◽  
pp. 1-6 ◽  
Author(s):  
R. Cisneros Tamayo ◽  
I.J. Guerrero Moreno ◽  
G. Polupan ◽  
T.V. Torchynska ◽  
J. Palacios Gomez
Keyword(s):  
Quantum Dots ◽  
Quantum Wells ◽  
Inas Quantum Dots

Photoluminescence of InAs quantum dots embedded in AlGaAs/InGaAs quantum wells with strain reducing layer

2014 ◽  
Vol 71 ◽  
pp. 168-176 ◽  
Author(s):  
R. Cisneros Tamayo ◽  
T.V. Torchynska ◽  
G. Polupan ◽  
I.J. Guerrero Moreno ◽  
E. Velázquez Lozada ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Quantum Wells ◽  
Inas Quantum Dots

Steady-State and Time-Resolved Near-Field Optical Spectroscopy of GaN/AlN Quantum Dots and InGaN/GaN Quantum Wells

2002 ◽  
Vol 190 (1) ◽  
pp. 155-160 ◽  
Author(s):  
J. Kudrna ◽  
P.G. Gucciardi ◽  
A. Vinattieri ◽  
M. Colocci ◽  
B. Damilano ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Steady State ◽  
Quantum Wells ◽  
Optical Spectroscopy ◽  
Near Field ◽  
Time Resolved

Emission and strain in InGaAs/GaAs quantum wells with InAs quantum dots obtained at different temperatures

2012 ◽  
Vol 52 (4) ◽  
pp. 844-850
Author(s):  
R.L. Mascorro Alquicira ◽  
J.L. Casas Espinola ◽  
E. Velázquez Lozada ◽  
G. Polupan ◽  
L. Shcherbyna
Keyword(s):  
Quantum Dots ◽  
Quantum Wells ◽  
Inas Quantum Dots ◽  
Different Temperatures
Sign in / Sign up

Export Citation Format

Share Document