Theoretical and experimental advances in Bi2Te3 / Sb2Te3 - based and related superlattice systems

2013 ◽  
Vol 1490 ◽  
pp. 205-222 ◽  
Author(s):  
M. Winkler ◽  
X. Liu ◽  
U. Schürmann ◽  
J. D. König ◽  
L. Kienle ◽  
...  
Keyword(s):  
Thin Film ◽  
Transport Properties ◽  
Thermoelectric Materials ◽  
Figure Of Merit ◽  
Theoretical Models ◽  
Review Article ◽  
Experimental Results ◽  
Thermoelectric Figure Of Merit ◽  
Thermoelectric Figure ◽  
Nanostructured Thermoelectric Materials

ABSTRACTRoughly a decade ago an outstanding thermoelectric figure of merit ZT of 2.4 was reported for nanostructured Bi2Te3/Sb2Te3-based thin film superlattice (SL) structures. The published results strongly fueled and renewed the interest in the development of efficient novel nanostructured thermoelectric materials. This review article shall give an overview over the most recent theoretical and experimental advances on Bi2Te3/Sb2Te3 SLs and related superlattice systems. The presented theoretical models are subdivided into electronic and phononic aspects. The experimental results are summarized with regard to the method used. A more detailed elaboration on structural and transport properties is given in the subsequent sections.

Thermoelectric Properties of n-Type 90% Bi2Te3+10%Bi2Se3 Thermoelectric Materials Produced by Melt Spinning Method and Sintering

2007 ◽  
Vol 534-536 ◽  
pp. 161-164 ◽  
Author(s):  
Taek Soo Kim ◽  
Byong Sun Chun
Keyword(s):  
Solid Solutions ◽  
Thermoelectric Materials ◽  
Figure Of Merit ◽  
Melt Spinning ◽  
Bending Strength ◽  
Sintering Temperature ◽  
Thermoelectric Figure Of Merit ◽  
Vacuum Sintering ◽  
Thermoelectric Figure ◽  
Sintering Processes

N-type Bi2Te3-Sb2Te3 solid solutions doped with CdCl2 was prepared by melt spinning, crushing and vacuum sintering processes. Microstructure, bending strength and thermoelectric property were investigated as a function of the doping quantity from 0.03wt.% to 0.10wt.% and sintering temperature from 400oC to 500oC, and finally compared with those of conventionally fabricated alloys. The alloy showed a good structural homogeneity as well as bending strength of 3.88Kgf/mm2. The highest thermoelectric figure of merit was obtained by doping 0.03wt.% and sintering at 500oC.

Thermoelectric Properties of Semiconducting Intermetallic Compounds: FeGa3and RuGa3

2003 ◽  
Vol 793 ◽  
Author(s):  
Y. Amagai ◽  
A. Yamamoto ◽  
C. H. Lee ◽  
H. Takazawa ◽  
T. Noguchi ◽  
...  
Keyword(s):  
Thermal Conductivity ◽  
Electrical Resistivity ◽  
High Temperature ◽  
Seebeck Coefficient ◽  
Transport Properties ◽  
Figure Of Merit ◽  
Room Temperature ◽  
Thermoelectric Figure Of Merit ◽  
Thermoelectric Figure ◽  
High Seebeck Coefficient

ABSTRACTWe report transport properties of polycrystalline TMGa3(TM = Fe and Ru) compounds in the temperature range 313K<T<973K. These compounds exhibit semiconductorlike behavior with relatively high Seebeck coefficient, electrical resistivity, and Hall carrier concentrations at room temperature in the range of 1017- 1018cm−3. Seebeck coefficient measurements reveal that FeGa3isn-type material, while the Seebeck coefficient of RuGa3changes signs rapidly from large positive values to large negative values around 450K. The thermal conductivity of these compounds is estimated to be 3.5Wm−1K−1at room temperature and decreased to 2.5Wm−1K−1for FeGa3and 2.0Wm−1K−1for RuGa3at high temperature. The resulting thermoelectric figure of merit,ZT, at 945K for RuGa3reaches 0.18.

Enhanced thermoelectric transport properties of n-type InSe due to the emergence of the flat band by Si doping

2019 ◽  
Vol 6 (6) ◽  
pp. 1475-1481 ◽  
Author(s):  
Kyu Hyoung Lee ◽  
Min-Wook Oh ◽  
Hyun-Sik Kim ◽  
Weon Ho Shin ◽  
Kimoon Lee ◽  
...  
Keyword(s):  
Transport Properties ◽  
Figure Of Merit ◽  
Flat Band ◽  
Thermoelectric Figure Of Merit ◽  
Thermoelectric Figure ◽  
Thermoelectric Transport ◽  
Si Doping ◽  
Thermoelectric Transport Properties ◽  
Si Doped

An improved thermoelectric figure of merit (zT) of 0.14 at 795 K was obtained in 7% Si doped InSe due to the emergence of the flat band.

Materials With Open Crystal Structure as Prospective Novel Thermoelectrics

1998 ◽  
Vol 545 ◽  
Author(s):  
Ctirad Uher ◽  
Jihui Yang ◽  
Siqing Hu
Keyword(s):  
Crystal Structure ◽  
Thermoelectric Materials ◽  
Figure Of Merit ◽  
Optimal Transport ◽  
Heusler Alloys ◽  
Thermoelectric Figure Of Merit ◽  
Great Flexibility ◽  
Thermoelectric Figure ◽  
Guest Species ◽  
Filled Skutterudites

AbstractA useful approach to identify materials with high thermoelectric figure of merit is to search for solids that offer great flexibility to modify and tailor the structure so as to achieve the optimal transport behavior. Among the most promising novel thermoelectric materials are solids with “open crystal structure”. They may be typified by structures with unfilled cages, crystals with an empty atomic sublattice, and by a network of polyhedral cages enclosing guest species. In this paper we present our latest results concerning transport properties in the above classes of solids. Specifically, we focus on the filled skutterudites, half-Heusler alloys, and clathrates.

Enhancing the average thermoelectric figure of merit of elemental Te by suppressing grain boundary scattering

2020 ◽  
Vol 8 (17) ◽  
pp. 8455-8461 ◽  
Author(s):  
Yehao Wu ◽  
Feng Liu ◽  
Qi Zhang ◽  
Tiejun Zhu ◽  
Kaiyang Xia ◽  
...  
Keyword(s):  
Electrical Conductivity ◽  
Grain Boundary ◽  
Thermoelectric Materials ◽  
Figure Of Merit ◽  
Thermoelectric Figure Of Merit ◽  
Boundary Scattering ◽  
Thermoelectric Figure ◽  
Grain Boundary Scattering

Suppressed grain boundary scattering contributes to enhanced electrical conductivity and device zT in elemental Te based thermoelectric materials.

Regulation of Ge Vacancies through Sm Doping boosting Superior Thermoelectric Performance in GeTe

2022 ◽  
Author(s):  
Tingdong Zhang ◽  
Shuping Deng ◽  
Xiaodie Zhao ◽  
Xuefeng Ruan ◽  
Ning Qi ◽  
...  
Keyword(s):  
Transport Properties ◽  
Thermal Transport ◽  
Figure Of Merit ◽  
Thermoelectric Performance ◽  
Thermoelectric Figure Of Merit ◽  
Thermoelectric Figure ◽  
Thermal Transport Properties ◽  
P Type

A high thermoelectric figure of merit ZT of 2.5 at 730 K is achieved in p-type Ge1−xSmxTe through synergetic optimization of electrical and thermal transport properties. Sm doping effectively suppresses...

Significantly enhanced thermoelectric figure of merit of p-type Mg3Sb2-based Zintl phase compounds via nanostructuring and employing high energy mechanical milling coupled with spark plasma sintering

2015 ◽  
Vol 3 (20) ◽  
pp. 10777-10786 ◽  
Author(s):  
A. Bhardwaj ◽  
N. S. Chauhan ◽  
D. K. Misra
Keyword(s):  
Thermoelectric Materials ◽  
Mechanical Milling ◽  
Figure Of Merit ◽  
High Energy ◽  
Thermoelectric Figure Of Merit ◽  
Zintl Phase ◽  
Thermoelectric Figure ◽  
Plasma Sintering ◽  
Spark Plasma ◽  
P Type

Several nanostructuring methods have been demonstrated to produce a variety of nanostructured materials, and these methods are well recognized as effective paradigms for improving the performance of thermoelectric materials.

Electrical Properties and Figures of Merit for New Chalcogenide-Based Thermoelectric Materials

1997 ◽  
Vol 478 ◽  
Author(s):  
Jon L. Schindler ◽  
Tim P. Hogan ◽  
Paul W. Brazis ◽  
Carl R. Kannewurf ◽  
Duck-Young Chung ◽  
...  
Keyword(s):  
Thermoelectric Materials ◽  
Figure Of Merit ◽  
Room Temperature ◽  
Thermoelectric Figure Of Merit ◽  
Thermoelectric Figure ◽  
Figures Of Merit ◽  
Lattice Symmetry ◽  
Thermoelectric Refrigeration ◽  
Polychalcogenide Flux ◽  
P Type

AbstractNew Bi-based chalcogenide compounds have been prepared using the polychalcogenide flux technique for crystal growth. These materials exhibit characteristics of good thermoelectric materials. Single crystals of the compound CsBi4Te6 have shown conductivity as high as 2440 S/cm with a p-type thermoelectric power of ≈ +110 μV/K at room temperature. A second compound, β-K2Bi8Se13 shows lower conductivity ≈ 240 S/cm, but a larger n-type thermopower ≈ −200 μV/K. Thermal transport measurements have been performed on hot-pressed pellets of these materials and the results show comparable or lower thermal conductivities than Bi2Te3. This improvement may reflect the reduced lattice symmetry of the new chalcogenide thermoelectrics. The thermoelectric figure of merit for CsBi4Te6 reaches ZT ≈ 0.32 at 260 K and for β-K2Bi8Se13 ZT ≈ 0.32 at room temperature, indicating that these compounds are viable candidates for thermoelectric refrigeration applications.

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