Enhanced thermoelectric transport properties of n-type InSe due to the emergence of the flat band by Si doping
2019 ◽
Vol 6
(6)
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pp. 1475-1481
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Keyword(s):
An improved thermoelectric figure of merit (zT) of 0.14 at 795 K was obtained in 7% Si doped InSe due to the emergence of the flat band.
2015 ◽
Vol 8
(2)
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pp. 423-435
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2018 ◽
Vol 280
◽
pp. 3-8
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2018 ◽
Vol 5
(8)
◽
pp. 1744-1759
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2017 ◽
Vol 9
(10)
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pp. 1872-1875
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