Anti-Parallel Circuit of Resistive Cu/TaOx/Pt Switches

2012 ◽  
Vol 1430 ◽  
Author(s):  
Tong Liu ◽  
Yuhong Kang ◽  
Mohini Verma ◽  
Marius Orlowski
Keyword(s):  
Neural Networks ◽  
Oxygen Vacancy ◽  
Logic Circuits ◽  
Switching Behavior ◽  
Switching Speed ◽  
Scaling Potential ◽  
Resistive Switches ◽  
Parallel Circuit ◽  
High Switching Speed ◽  
First Time

ABSTRACTResistive switches are being explored as a candidate for ultra-dense memory as well as logic circuits. The advantages of the resistive switches include high switching speed and excellent scaling potential. Here, we report for the first time the switching behavior of anti-parallel connected resistive switches (APS), which is a composite device exhibiting bi-directional switching properties. Under the opposite voltage biases, the two anti-parallel cells are alternatively set and reset, rendering the APS switched in both directions. For appropriate ON resistance values and set and reset voltages the two anti-parallel switches can be both set in conductive states. An APS device can be realized in a single switch by two coexisting Cu and oxygen vacancy nanofilaments which are formed and ruptured under opposite voltage polarities. The described APS behavior is of interest to logic applications and in neural networks.

A hierarchical oxygen vacancy-rich WO3 with “nanowire-array-on-nanosheet-array” structure for highly efficient oxygen evolution reaction

2019 ◽  
Vol 7 (12) ◽  
pp. 6730-6739 ◽  
Author(s):  
Jinxiang Diao ◽  
Wenyu Yuan ◽  
Yu Qiu ◽  
Laifei Cheng ◽  
Xiaohui Guo
Keyword(s):  
Oxygen Vacancy ◽  
Oxygen Evolution Reaction ◽  
Oxygen Vacancies ◽  
State Of The Art ◽  
Nanowire Array ◽  
Nanowire Arrays ◽  
Nanosheet Array ◽  
Nanosheet Arrays ◽  
Array Structure ◽  
First Time

Hierarchical vertical WO3 nanowire arrays on vertical WO3 nanosheet arrays with rich oxygen vacancies were synthesized via a simple and facile method, and the outstanding OER performance which is superior to that of most reported state-of-the-art catalysts was reported for the first time.

A memory nanodevice based on Zn-MOF-74: a molecular dynamics study

2020 ◽  
Vol 8 (5) ◽  
pp. 1567-1570 ◽  
Author(s):  
Mikhail Suyetin ◽  
Thomas Heine
Keyword(s):  
Molecular Dynamics ◽  
Electric Field ◽  
Memory Element ◽  
Switching Speed ◽  
High Switching Speed ◽  
Element Density

C60−@Zn-MOF-74 operated by an electric field exhibits a combined high switching speed of 27 GB s−1 and a high memory element density of 106 Tb per inch2.

IMPROVEMENT OF DOSE ESTIMATION PROCESS USING ARTIFICIAL NEURAL NETWORKS

2018 ◽  
Vol 184 (1) ◽  
pp. 36-43 ◽  
Author(s):  
Gal Amit ◽  
Hanan Datz
Keyword(s):  
Neural Networks ◽  
Support Vector Machine ◽  
Artificial Neural Networks ◽  
Support Vector ◽  
Physical Parameters ◽  
Machine Method ◽  
Algorithm Performance ◽  
Artificial Neural ◽  
First Time ◽  
Automatic Algorithm

Abstract We present here for the first time a fast and reliable automatic algorithm based on artificial neural networks for the anomaly detection of a thermoluminescence dosemeter (TLD) glow curves (GCs), and compare its performance with formerly developed support vector machine method. The GC shape of TLD depends on numerous physical parameters, which may significantly affect it. When integrated into a dosimetry laboratory, this automatic algorithm can classify ‘anomalous’ (having any kind of anomaly) GCs for manual review, and ‘regular’ (acceptable) GCs for automatic analysis. The new algorithm performance is then compared with two kinds of formerly developed support vector machine classifiers—regular and weighted ones—using three different metrics. Results show an impressive accuracy rate of 97% for TLD GCs that are correctly classified to either of the classes.

scholarly journals Optically Modulated Resistance Switching Polarities in BaTiO3 Thin Film

2020 ◽  
Author(s):  
Jing Wang ◽  
Bailey Bedford ◽  
Chanle Chen ◽  
Ludi Miao ◽  
Binghcheng Luo
Keyword(s):  
Thin Film ◽  
Oxygen Vacancy ◽  
Excitation Energy ◽  
Ultraviolet Light ◽  
Light Response ◽  
Resistance Switching ◽  
The State ◽  
Switching Behavior ◽  
Memory Devices ◽  
Resistive Memory

The light response and resistance switching behavior in BaTiO3 (BTO) films are studied for a symmetric Pt/BTO/Pt structure. The resistance of films as a function of time with and without ultraviolet light has been studied. Furthermore, resistance switching behavior was clearly observed based on the application of 365 nm wavelength ultraviolet light. Consequently, the polarities of resistance switching can be controlled by ultraviolet light when the energy is larger than the band excitation energy. It is proposed that the polarity of the resistance switching is dictated by the competition of the ferroelectricity and oxygen vacancy migration. This provides a new mechanism for modulating the state of ferroelectric resistive memory devices.

MECHANISM STUDY ON OXYGEN VACANCY INDUCED RESISTANCE SWITCHING IN Au/LaMnO3/SrNb0.01Ti0.99O3

2013 ◽  
Vol 27 (11) ◽  
pp. 1350074 ◽  
Author(s):  
YU-LING JIN ◽  
ZHONG-TANG XU ◽  
KUI-JUAN JIN ◽  
CHEN GE ◽  
HUI-BIN LU ◽  
...  
Keyword(s):  
Oxygen Vacancy ◽  
Oxygen Vacancies ◽  
Vacancy Concentration ◽  
Resistance Switching ◽  
Switching Behavior ◽  
Oxygen Vacancy Concentration ◽  
Mechanism Study ◽  
Switching Performance ◽  
Switching Characteristics

Mechanism of resistance switching in heterostructure Au / LaMnO 3/ SrNb 0.01 Ti 0.99 O 3 was investigated. In Au / LaMnO 3/ SrNb 0.01 Ti 0.99 O 3 devices the LaMnO 3 films were fabricated under various oxygen pressures. The content of the oxygen vacancies has a significant impact on the resistance switching performance. We propose that the resistance switching characteristics of Au / LaMnO 3/ SrNb 0.01 Ti 0.99 O 3 arise from the modulation of the Au / LaMnO 3 Schottky barrier due to the change of the oxygen vacancy concentration at Au / LaMnO 3 interface under the external electric field. The effect of the oxygen vacancy concentration on the resistance switching is explained based on the self-consistent calculation. Both the experimental and numerical results confirm the important role of the oxygen vacancies in the resistance switching behavior.

Laser synthesis of oxygen vacancy-modified CoOOH for highly efficient oxygen evolution

2019 ◽  
Vol 55 (20) ◽  
pp. 2904-2907 ◽  
Author(s):  
Chao Meng ◽  
Mengchang Lin ◽  
Xuechun Sun ◽  
Xiaodong Chen ◽  
Xuemin Chen ◽  
...  
Keyword(s):  
Laser Ablation ◽  
Oxygen Vacancy ◽  
Oxygen Evolution ◽  
Water Oxidation ◽  
Laser Synthesis ◽  
Highly Efficient ◽  
Laser Ablation In Liquids ◽  
First Time

Laser ablation in liquids has been, for the first time, employed to produce oxygen vacancy-modified CoOOH nanosheets for efficient water oxidation.

scholarly journals Bidirectional-nonlinear threshold switching behaviors and thermally robust stability of ZnTe selectors by nitrogen annealing

2020 ◽  
Vol 10 (1) ◽  
Author(s):  
Gabriel Jang ◽  
Mihyun Park ◽  
Da Seul Hyeon ◽  
WooJong Kim ◽  
JungYup Yang ◽  
...  
Keyword(s):  
Three Dimensional ◽  
Annealing Treatment ◽  
Memory Storage ◽  
Switching Behavior ◽  
Switching Speed ◽  
Conduction Model ◽  
Ultra Low Power ◽  
Threshold Switching ◽  
Nitrogen Annealing ◽  
Chalcogenide Materials

Abstract Three-dimensional stackable memory frames involving the integration of two-terminal scalable crossbar arrays are expected to meet the demand for high-density memory storage, fast switching speed, and ultra-low power operation. However, two-terminal crossbar arrays introduce an unintended sneak path, which inevitably requires bidirectional nonlinear selectors. In this study, the advanced threshold switching (TS) features of ZnTe chalcogenide material-based selectors provide bidirectional threshold switching behavior, nonlinearity of 104, switching speed of less than 100 ns, and switching endurance of more than 107. In addition, thermally robust ZnTe selectors (up to 400 ℃) can be obtained through the use of nitrogen-annealing treatment. This process can prevent possible phase separation phenomena observed in generic chalcogenide materials during thermal annealing which occurs even at a low temperature of 250 ℃. The possible characteristics of the electrically and thermally advanced TS nature are described by diverse structural and electrical analyses through the Poole–Frankel conduction model.

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