Very Thin Micromorph Tandem Solar Cells Deposited at Low Substrate Temperature

2012 ◽  
Vol 1426 ◽  
pp. 45-49 ◽  
Author(s):  
M.M. de Jong ◽  
J.K. Rath ◽  
R.E.I. Schropp
Keyword(s):  
Thin Film ◽  
Solar Cells ◽  
Band Gap ◽  
Crystalline Silicon ◽  
Nanocrystalline Silicon ◽  
Thin Film Solar Cells ◽  
Maximum Temperature ◽  
Tandem Solar Cells ◽  
Bottom Cell ◽  
High Band

ABSTRACTAs an alternative to crystalline silicon or thin film solar cells on rigid glass substrates, we aim to fabricate amorphous silicon (a-Si)/nanocrystalline silicon (nc-Si) tandem thin film solar cells on cheap flexible substrates. We have chosen polycarbonate as the superstrate and adapted the a-Si and nc-Si deposition processes for deposition at a maximum temperature of 130°. Because a-Si deposited at low temperatures has a high band gap, we were able to fabricate very thin (<1.2 μm) a-Si/nc-Si solar cells, because the high band gap of the a-Si shifts the current generation more towards the bottom cell, allowing for a much thinner (900 nm) bottom cell. The somewhat lower Jsc of the complete cell is partly compensated by a higher Vocwhich results in an initial conversion efficiency of 9.5% for the low temperature tandem solar cells on glass.

A comparative study of solution-processed low- and high-band-gap chalcopyrite thin-film solar cells

2014 ◽  
Vol 47 (13) ◽  
pp. 135105 ◽  
Author(s):  
Se Jin Park ◽  
Yunae Cho ◽  
Sung Hwan Moon ◽  
Ji Eun Kim ◽  
Doh-Kwon Lee ◽  
...  
Keyword(s):  
Thin Film ◽  
Solar Cells ◽  
Comparative Study ◽  
Band Gap ◽  
Thin Film Solar Cells ◽  
Solution Processed ◽  
High Band

scholarly journals Wide band gap kesterite absorbers for thin film solar cells: potential and challenges for their deployment in tandem devices

2019 ◽  
Vol 3 (9) ◽  
pp. 2246-2259 ◽  
Author(s):  
Bart Vermang ◽  
Guy Brammertz ◽  
Marc Meuris ◽  
Thomas Schnabel ◽  
Erik Ahlswede ◽  
...  
Keyword(s):  
Thin Film ◽  
Solar Cells ◽  
Band Gap ◽  
Wide Band ◽  
Wide Bandgap ◽  
Thin Film Solar Cells ◽  
Wide Band Gap ◽  
Tandem Solar Cells

This study describes the potential and challenges involved with the use of wide bandgap kesterite absorbers in tandem solar cells.

scholarly journals Material and solar cell research in high efficiency micromorph tandem solar cell

2015 ◽  
Vol 37 ◽  
pp. 434 ◽  
Author(s):  
Razagh Hafezi ◽  
Soroush Karimi ◽  
Sharie Jamalzae ◽  
Masoud Jabbari
Keyword(s):  
Thin Film ◽  
Solar Cells ◽  
Solar Cell ◽  
Amorphous Silicon ◽  
High Efficiency ◽  
Crystalline Silicon ◽  
Chemical Vapour ◽  
Microcrystalline Silicon ◽  
Tandem Solar Cells ◽  
Bottom Cell

“Micromorph” tandem solar cells consisting of a microcrystalline silicon bottom cell and an amorphous silicon top cell are considered as one of the most promising new thin-film silicon solar-cell concepts. Their promise lies in the hope of simultaneously achieving high conversion efficiencies at relatively low manufacturing costs. The concept was introduced by IMT Neuchâtel, based on the VHF-GD (very high frequency glow discharge) deposition method. The key element of the micromorph cell is the hydrogenated microcrystalline silicon bottom cell that opens new perspectives for low-temperature thin-film crystalline silicon technology. This paper describes the use, within p–i–n- and n–i–p-type solar cells, of hydrogenated amorphous silicon (a-Si:H) and hydrogenated microcrystalline silicon (_c-Si:H) thin films (layers), both deposited at low temperatures (200_C) by plasma-assisted chemical vapour deposition (PECVD), from a mixture of silane and hydrogen. Optical and electrical properties of the i-layers are described. Finally, present performances and future perspectives for a high efficiency ‘micromorph’ (mc-Si:Hya-Si:H) tandem solar cells are discussed.

scholarly journals Theoretical analysis of CZTS/CZTSSe tandem solar cells.

2021 ◽  
Author(s):  
Atul Kumar
Keyword(s):  
Thin Film ◽  
Solar Cells ◽  
Solar Cell ◽  
Theoretical Analysis ◽  
Band Gap ◽  
Short Circuit ◽  
Short Circuit Current ◽  
Alternative Technique ◽  
Tandem Solar Cells ◽  
Bottom Cell

Abstract Kesterite CZTSxSe1−x has a band gap range from 1 to 1.5eV depending upon S/Se ration. The tandem of kieserite solar cell is proposed and simulated in SCAPS-1D for device configuration and analysis of the performance. CZTS of bandgap 1.5eV as top cell and CZTSSe of bandgap 1.1eV as bottom cell are stacked in tandem for the structure. The thickness of the two layer are optimized for matching the short circuit current JSC in the tandem. This study shines light on alternative technique of thin film multijunction for enhancing the efficiency of CZTSxSe1−x solar cells.

Multistep deposition of Cu2 Si(S,Se)3 and Cu2 ZnSiSe4 high band gap absorber materials for thin film solar cells

2015 ◽  
Vol 9 (6) ◽  
pp. 338-343 ◽  
Author(s):  
Hossam ElAnzeery ◽  
Marie Buffière ◽  
Khaled Ben Messaoud ◽  
Souhaib Oueslati ◽  
Guy Brammertz ◽  
...  
Keyword(s):  
Thin Film ◽  
Solar Cells ◽  
Band Gap ◽  
Thin Film Solar Cells ◽  
High Band

scholarly journals Routes to develop a [S]/([S]+[Se]) gradient in wide band-gap Cu2ZnGe(S,Se)4 thin-film solar cells

2021 ◽  
Vol 868 ◽  
pp. 159253
Author(s):  
Andrea Ruiz-Perona ◽  
Galina Gurieva ◽  
Michael Sun ◽  
Tim Kodalle ◽  
Yudania Sánchez ◽  
...  
Keyword(s):  
Thin Film ◽  
Solar Cells ◽  
Band Gap ◽  
Wide Band ◽  
Thin Film Solar Cells ◽  
Wide Band Gap

CdTe Thin Film Solar Cells: The CdS/SnO2 Front Contact

2001 ◽  
Vol 668 ◽  
Author(s):  
J. Fritsche ◽  
S. Gunst ◽  
A. Thiβen ◽  
R. Gegenwart ◽  
A. Klein ◽  
...  
Keyword(s):  
Thin Film ◽  
Solar Cells ◽  
Band Gap ◽  
Photoelectron Spectroscopy ◽  
Tin Dioxide ◽  
Surface Preparation ◽  
Thin Film Solar Cells ◽  
Subsequent Formation ◽  
Coated Glass ◽  
Preparation Conditions

ABSTRACTTin dioxide (SnO2) coated glass is the commonly used substrate for thin film solar cells based on CdTe absorbers. We have investigated the properties of the CdS/SnO2 interface by X-ray and ultraviolet photoelectron spectroscopy. SnO2 coated glass substrates as used for solar cell preparation were cleaned by different procedures such as derinsing, sputtering, heating and annealing in oxygen atmosphere. Different surface properties with a strongly dependent number of defects in the SnO2 band gap are identified. CdS films were deposited stepwise by thermal evaporation to determine the electronic interface properties for different surface preparation conditions. Comparative barrier heights at the CdSSnO2 contact are found for most surface pretreatments. The Fermi level position in these cases is situated in the SnO2 band gap. A different interface behaviour is determined for sputter cleaned SnO2 surfaces, which is attributed to the formation of oxygen vacancies during sputtering and subsequent formation of an interfacial SnOxSy compound.

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