Doping Effect on Chloroindium Phthalocyanine (ClInPc)/C60 Solar Cells

2012 ◽  
Vol 1390 ◽  
Author(s):  
Weining Wang ◽  
Neal Armstrong

ABSTRACTFor inorganic semiconductor solar cells, controlled doping is important because it can cause Fermi level shift of the inorganic semiconductor and achieve ohmic contact at the metal-semiconductor interface. In this paper we show that doping can also be used to shift Fermi level in organic semiconductors and cause changes in solar cell performance. We have made chloroindium phthalocyanine (ClInPc)/C60 heterojunction solar cells, where tetrafluoro-teracyano-quinodimethane (F4-TCNQ) is used to dope ClInPc layer. Ultraviolet photoemission spectroscopy (UPS) is used to investigate the ITO/ClInPc interfaces. The result shows that doping causes a Fermi level shift at the ITO/ClInPc interface as it does for inorganic semiconductors. As the doping increases, dark saturation current J0 of the solar cell increases, while open-circuit voltage Voc, short-circuit current Jsc and fill factor decreases. As a result, the efficiency of the solar cell decreases as doping increases. More UPS studies on ClInPc (doped with F4TCNQ)/C60 junction are needed to correlate the energy band diagram of the whole solar cell structure with the J-V characteristics.

2015 ◽  
Vol 1738 ◽  
Author(s):  
Liyuan Zhang ◽  
Sreejith Karthikeyan ◽  
Mandip J. Sibakoti ◽  
Stephen A. Campbell

ABSTRACTWe investigate the synthesis of kesterite Cu2ZnSnS4 (CZTS) thin films using thermal evaporation from copper, zinc and tin pellets and post-annealing in a sulfur atmosphere. The effects of chemical composition were studied both on the absorber layer properties and on the final solar cell performance. It is confirmed that CZTS thin film chemical composition affects the carrier concentration profile, which then influences the solar cell properties. Solar cells using a CZTS thin film with composition ratio Cu/(Zn+Sn) = 0.87, and Zn/Sn = 1.24 exhibited an open-circuit voltage of 483 mV, a short-circuit current of 14.54 mA/cm2, a fill factor of 37.66 % and a conversion efficiency of 2.64 %. Only a small deviation from the optimal chemical composition can drop device performance to a lower level, which confirms that the CZTS solar cells with high conversion efficiency existed in a relatively narrow composition region.


2004 ◽  
Vol 836 ◽  
Author(s):  
A. W. Bett ◽  
C. Baur ◽  
F. Dimroth ◽  
J. Schöne

ABSTRACTGaxIn1−xAs and GayIn1−yP layers were grown lattice mismatched to GaAs and Ge by low-pressure metal organic vapor phase epitaxy (LP-MOPVE). These materials are very promising for further increasing the efficiency of monolithic triple-junction solar cells. Different buffer layer structures were realized. Transmission electron microscopy and x-ray diffraction analysis were used to characterize the quality of the crystal. Both linear and step-graded buffers in GaxIn1−xAs were successfully used under an active solar cell structure. GayIn1−yP as buffer material showed a worse performance. Excellent solar cell performance was achieved for lattice mismatched single-, dual- and triple-junction solar cells.


Author(s):  
Wail Hessen ALawad ALHessen ◽  
Abdelnabe Ali Elamin Ali ◽  
Mohammed Habib Ahmed El_kanzi

In this paper, the performance of solar cells was studied and evaluated . The role of several effects for operation condition such as temperature, sunlight intensity on the solar cells output parameters has been studied. Experimental results showed that relationship between the amount of solar cell output parameters variations such as maximum output power, open circuit voltage, short circuit current, and efficiency in terms of temperature and light intensity. The measurements were carried out for the intensity of solar radiation in Khartoum area in Sudan, from February month to April month which records the solar radiation in W/m2, The results were collected from 10 Am to 4 pm, three days per week, data were averaged and also illustrated in the form of graphs of solar radiation as a function of the time of the day. The operating temperature plays a key role in the photovoltaic conversion process. Both the electrical efficiency and the power output of the solar cell depend on the operating temperature. Solar cell performance decreases with increasing temperature.


In this paper, a novel photonic crystal (PhC) polycrystalline CdTe/Silicon solar cells are theoretically explained that increase their short circuit current density and conversion efficiency. The proposed structure consist of a polycrystalline CdTe/Silicon solar cell that a photonic crystal is formed in the upper cell. The optical confinement is achieved by means of photonic crystal that can adjust the propagation and distribution of photons in solar cells. For validation of modeling, the electrical properties of the experimentally-fabricated based CdS/CdTe solar cell is modeled and compared that there is good agreement between the modeling results and experimental results from the litterature. The results of this study showed that the solar cell efficiency is increased by about 25% compared to the reference cell by using photonic crystal. The open circuit voltage, short circuit current density, fill factor and conversion efficiency of proposed solar cell structure are 1.01 V, 40.7 mA/cm2, 0.95 and 27% under global AM 1.5 conditions, respectively. Furthermore, the influence of carrier lifetime variation in the absorber layer of proposed solar cell on the electrical characteristics was theoretically considered and investigated.


Nanomaterials ◽  
2019 ◽  
Vol 9 (1) ◽  
pp. 121 ◽  
Author(s):  
Lung-Chien Chen ◽  
Ching-Ho Tien ◽  
Zong-Liang Tseng ◽  
Jun-Hao Ruan

We describe a method to enhance power conversion efficiency (PCE) of MAPbI3 perovskite solar cell by inserting a FAPbX3 perovskite quantum dots (QD-FAPbX3) layer. The MAPbI3 and QD-FAPbX3 layers were prepared using a simple, rapid spin-coating method in a nitrogen-filled glove box. The solar cell structure consists of ITO/PEDOT:PSS/MAPbI3/QD-FAPbX3/C60/Ag, where PEDOT:PSS, MAPbI3, QD-FAPbX3, and C60 were used as the hole transport layer, light-absorbing layer, absorption enhance layer, and electron transport layer, respectively. The MAPbI3/QD-FAPbX3 solar cells exhibit a PCE of 7.59%, an open circuit voltage (Voc) of 0.9 V, a short-circuit current density (Jsc) of 17.4 mA/cm2, and a fill factor (FF) of 48.6%, respectively.


2014 ◽  
Vol 5 ◽  
pp. 2398-2402 ◽  
Author(s):  
Erki Kärber ◽  
Atanas Katerski ◽  
Ilona Oja Acik ◽  
Valdek Mikli ◽  
Arvo Mere ◽  
...  

Solar cells consisting of an extremely thin In2S3/CuInS2 buffer/absorber layer uniformly covering planar ZnO were prepared entirely by chemical spray pyrolysis. Au nanoparticles (Au-NPs) were formed via thermal decomposition of a gold(III) chloride trihydrate (HAuCl4·3H2O) precursor by spraying 2 mmol/L of the aqueous precursor solution onto a substrate held at 260 °C. Current–voltage scans and external quantum efficiency spectra were used to evaluate the solar cell performance. This work investigates the effect of the location of the Au-NP layer deposition (front side vs rear side) in the solar cell and the effect of varying the volume (2.5–10 mL) of the sprayed Au precursor solution. A 63% increase (from 4.6 to 7.5 mA/cm2) of the short-circuit current density was observed when 2.5 mL of the precursor solution was deposited onto the rear side of the solar cell.


2021 ◽  
Vol 5 (1) ◽  
Author(s):  
Vidur Raj ◽  
Dipankar Chugh ◽  
Lachlan E. Black ◽  
M. M. Shehata ◽  
Li Li ◽  
...  

AbstractSurface passivation is crucial for many high-performance solid-state devices, especially solar cells. It has been proposed that 2D hexagonal boron nitride (hBN) films can provide near-ideal passivation due to their wide bandgap, lack of dangling bonds, high dielectric constant, and easy transferability to a range of substrates without disturbing their bulk properties. However, so far, the passivation of hBN has been studied for small areas, mainly because of its small sizes. Here, we report the passivation characteristics of wafer-scale, few monolayers thick, hBN grown by metalorganic chemical vapor deposition. Using a recently reported ITO/i-InP/p+-InP solar cell structure, we show a significant improvement in solar cell performance utilizing a few monolayers of hBN as the passivation layer. Interface defect density (at the hBN/i-InP) calculated using C–V measurement was 2 × 1012 eV−1cm−2 and was found comparable to several previously reported passivation layers. Thus, hBN may, in the future, be a possible candidate to achieve high-quality passivation. hBN-based passivation layers can mainly be useful in cases where the growth of lattice-matched passivation layers is complicated, as in the case of thin-film vapor–liquid–solid and close-spaced vapor transport-based III–V semiconductor growth techniques.


Author(s):  
Md. Sazzadur Rahman ◽  
Md. Samiur Rahman ◽  
Al Jaber ◽  
Suman Miah

<p>Doping concentration of the absorber layer plays a vital role in the performance of perovskite solar cells, because not only it has a direct impact on the collection efficiency of the photo generated carriers, but it can also be considered as an indicator of the film quality and aging process for so-called self-doped (unintentionally doped) perovskite absorbers, where the carriers are induced from structural imperfections. To observe its influence on the efficiency of perovskite solar cell, a two-junction solar cell structure MAPbBr3/MAPbI3 is analyzed in this study, employing a novel optoelectrical simulation approach with finite-difference time-domain (FDTD) analysis and solar cell capacitance simulation (SCAPS) program. It is found that, the efficiency of the tandem cell falls from ∼22% to ∼12% as front-cell absorber film degrades from single-crystal quality with low self-doped carrier concentration of the order of 1010cm−3 , to degraded film quality with very high carrier concentration of the order of 1018cm−3 . In contrast, the self-doped carrier concentration of the back-cell absorber illustrates less impact on the efficiency of the cell, especially for thicker front-cell absorber. Thus, this case study gives a simpler but novel insight into the long-term stability of the efficiency of high-performance perovskite solar cells establishing a link between the solar cell performance and the self-doped carrier concentration (doping concentration) of the absorber film.</p>


Crystals ◽  
2021 ◽  
Vol 11 (12) ◽  
pp. 1468
Author(s):  
Samer H. Zyoud ◽  
Ahed H. Zyoud ◽  
Naser M. Ahmed ◽  
Anupama R. Prasad ◽  
Sohaib Naseem Khan ◽  
...  

The numerical modeling of a copper zinc tin sulfide (CZTS)-based kesterite solar cell is described in detail in this article. To model FTO/ZnO/CdS/CZTS/MO structured solar cells, the Solar Cell Capacitance Simulator-one-dimension (SCAPS-1D) program was utilized. Numerical modeling was used to estimate and assess the parameters of various photovoltaic thin film solar cells. The impact of different parameters on solar cell performance and conversion efficiency were explored. Because the response of a solar cell is partly determined by its internal physical mechanism, J-V characteristic characteristics are insufficient to define a device’s behavior. Regardless of the conviction in solar cell modeling, variable attributes as well as many probable conditions must be handled for simulation. Promising optimized results were obtained with a conversion efficiency of (η% = 25.72%), a fill factor of (FF% = 83.75%), a short-circuit current of (JSC  = 32.96436 mA/cm2), and an open-circuit voltage of (VOC = 0.64 V). The findings will aid in determining the feasibility of manufacturing high-efficiency CZTS-based solar cells. First, in the SCAPS-1D environment, the impacts of experimentally constructed CZTS solar cells were simulated. The experimental data was then compared to the simulated results from SCAPS-1D. After optimizing cell parameters, the conversion efficiency of the improved system was observed to rise. The influence of system factors, such as the thickness, acceptor, and donor carrier concentration densities of the absorber and electron transport layers, and the effect of temperature on the efficiency of CZTS-based photovoltaic cells, was explored using one-dimensional SCAPS-1D software. The suggested findings will be extremely useful to engineers and researchers in determining the best method for maximizing solar cell efficiency, as well as in the development of more efficient CZTS-based solar cells.


2008 ◽  
Vol 1066 ◽  
Author(s):  
Baojie Yan ◽  
Guozhen Yue ◽  
Yanfa Yan ◽  
Chun-Sheng Jiang ◽  
Charles W. Teplin ◽  
...  

ABSTRACTWe present a systematic study on the correlation of hydrogen dilution profiles to structural properties materials and solar cell performance in nc-Si:H solar cells. We deposited nc-Si:H single-junction solar cells using a modified very high frequency (VHF) glow discharge technique on stainless steel substrates with various profiles of hydrogen dilution in the gas mixture during deposition. The material properties were characterized using Raman spectroscopy, X-TEM, AFM, and C-AFM. The solar cell performance correlates well with the material structures. Three major conclusions are made based on the characterization results. First, the optimized nc-Si:H material does not show an incubation layer, indicating that the seeding layer is well optimized and works as per design. Second, the nanocrystalline evolution is well controlled by hydrogen dilution profiling in which the hydrogen dilution ratio is dynamically reduced during the intrinsic layer deposition. Third, the best nc-Si:H single-junction solar cell was made using a proper hydrogen dilution profile, which caused a nanocrystalline distribution close to uniform throughout the thickness, but with a slightly inverse nanocrystalline evolution. We have used the optimized hydrogen dilution profiling and improved the nc-Si:H solar cell performance significantly. As a result, we have achieved an initial active-area cell efficiency of 9.2% with a nc-Si:H single-junction structure, and 15.4% with an a-Si:H/a-SiGe:H/nc-Si:H triple-junction solar cell structure.


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