scholarly journals Characterization of InGaN and InAlN Epilayers by Microdiffraction X-Ray Reciprocal Space Mapping

2012 ◽  
Vol 1396 ◽  
Author(s):  
V. Kachkanov ◽  
I.P. Dolbnya ◽  
K.P. O’Donnell ◽  
K. Lorenz ◽  
S. Pereira ◽  
...  
Keyword(s):  
Three Dimensional ◽  
Space Mapping ◽  
Reciprocal Space ◽  
Composition Gradient ◽  
Reciprocal Space Mapping ◽  
Strain Fields ◽  
X Ray ◽  
Sapphire Substrates ◽  
Full Volume

ABSTRACTWe report a study of InGaN and InAlN epilayers grown on GaN/Sapphire substrates by microfocused three-dimensional X-ray Reciprocal Space Mapping (RSM). The analysis of the full volume of reciprocal space, while probing samples on the microscale with a focused X-ray beam, allows us to gain uniquely valuable information about the microstructure of III-N alloy epilayers. It is found that “seed” InGaN mosaic nanocrystallites are twisted with respect to the ensemble average and strain free. This indicates that the growth of InGaN epilayers follows the Volmer-Weber mechanism with nucleation of “seeds” on strain fields generated by thea-type dislocations which are responsible for the twist of underlying GaN mosaic blocks. In the case of InAlN epilayer formation of composition gradient was observed at the beginning of the epitaxial growth.

Asymmetrical reciprocal space mapping using X-ray diffraction: a technique for structural characterization of GaN/AlN superlattices

CrystEngComm ◽  
2017 ◽  
Vol 19 (22) ◽  
pp. 2977-2982 ◽  
Author(s):  
H. V. Stanchu ◽  
A. V. Kuchuk ◽  
M. Barchuk ◽  
Yu. I. Mazur ◽  
V. P. Kladko ◽  
...  
Keyword(s):  
Structural Characterization ◽  
Space Mapping ◽  
Reciprocal Space ◽  
X Ray Diffraction ◽  
Reciprocal Space Mapping ◽  
X Ray

In situ three-dimensional X-ray reciprocal-space mapping of InGaAs multilayer structures grown on GaAs(001) by MBE

2015 ◽  
Vol 425 ◽  
pp. 13-15 ◽  
Author(s):  
Takuo Sasaki ◽  
Masamitu Takahasi ◽  
Hidetoshi Suzuki ◽  
Yoshio Ohshita ◽  
Masafumi Yamaguchi
Keyword(s):  
Three Dimensional ◽  
Space Mapping ◽  
Reciprocal Space ◽  
Multilayer Structures ◽  
Reciprocal Space Mapping ◽  
X Ray

In situ three-dimensional X-ray reciprocal-space mapping of GaAs epitaxial films on Si(001)

2013 ◽  
Vol 378 ◽  
pp. 34-36 ◽  
Author(s):  
M. Takahasi ◽  
Y. Nakata ◽  
H. Suzuki ◽  
K. Ikeda ◽  
M. Kozu ◽  
...  
Keyword(s):  
Three Dimensional ◽  
Epitaxial Films ◽  
Space Mapping ◽  
Reciprocal Space ◽  
Reciprocal Space Mapping ◽  
X Ray

scholarly journals A look inside epitaxial cobalt-on-fluorite nanoparticles with three-dimensional reciprocal space mapping using GIXD, RHEED and GISAXS

2013 ◽  
Vol 46 (4) ◽  
pp. 874-881 ◽  
Author(s):  
S. M. Suturin ◽  
V. V. Fedorov ◽  
A. M. Korovin ◽  
G. A. Valkovskiy ◽  
S. G. Konnikov ◽  
...  
Keyword(s):  
Electron Diffraction ◽  
Crystal Lattice ◽  
Three Dimensional ◽  
Grazing Incidence ◽  
High Energy ◽  
Space Mapping ◽  
Reciprocal Space ◽  
Face Centered Cubic ◽  
Reciprocal Space Mapping ◽  
X Ray

In this work epitaxial growth of cobalt on CaF2(111), (110) and (001) surfaces has been extensively studied. It has been shown by atomic force microscopy that at selected growth conditions stand-alone faceted Co nanoparticles are formed on a fluorite surface. Grazing-incidence X-ray diffraction (GIXD) and reflection high-energy electron diffraction (RHEED) studies have revealed that the particles crystallize in the face-centered cubic lattice structure otherwise non-achievable in bulk cobalt under normal conditions. The particles were found to inherit lattice orientation from the underlying CaF2 layer. Three-dimensional reciprocal space mapping carried out using X-ray and electron diffraction has revealed that there exist long bright 〈111〉 streaks passing through the cobalt Bragg reflections. These streaks are attributed to stacking faults formed in the crystal lattice of larger islands upon coalescence of independently nucleated smaller islands. Distinguished from the stacking fault streaks, crystal truncation rods perpendicular to the {111} and {001} particle facets have been observed. Finally, grazing-incidence small-angle X-ray scattering (GISAXS) has been applied to decouple the shape-related scattering from that induced by the crystal lattice defects. Particle faceting has been verified by modeling the GISAXS patterns. The work demonstrates the importance of three-dimensional reciprocal space mapping in the study of epitaxial nanoparticles.

In Situ X-Ray Reciprocal Space Mapping for Characterization of Nanomaterials

2016 ◽  
pp. 507-544 ◽  
Author(s):  
Peter Siffalovic ◽  
Karol Vegso ◽  
Martin Hodas ◽  
Matej Jergel ◽  
Yuriy Halahovets ◽  
...  
Keyword(s):  
Space Mapping ◽  
Reciprocal Space ◽  
Reciprocal Space Mapping ◽  
X Ray

X-ray characterization of epi-Ge/Pr2 O3 /Si(111) layer stacks by pole figures and reciprocal space mapping

2009 ◽  
Vol 206 (8) ◽  
pp. 1809-1815 ◽  
Author(s):  
Peter Zaumseil ◽  
Alessandro Giussani ◽  
Peter Rodenbach ◽  
Thomas Schroeder
Keyword(s):  
Space Mapping ◽  
Reciprocal Space ◽  
Reciprocal Space Mapping ◽  
X Ray ◽  
Pole Figures
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