Structural and optical property tailoring of black silicon with fs-laser pulses

2012 ◽  
Vol 1405 ◽  
Author(s):  
S. Kontermann ◽  
A. L. Baumann ◽  
T. Gimpel ◽  
K.M. Guenther ◽  
A. Ruibys ◽  
...  
Keyword(s):  
Solar Cell ◽  
Femtosecond Laser ◽  
Band Gap ◽  
Silicon Solar Cell ◽  
Crystalline Silicon ◽  
Thick Layer ◽  
Laser Pulses ◽  
Femtosecond Laser Pulses ◽  
Black Silicon ◽  
Material Characteristics

ABSTRACTIrradiating a planar silicon surface with femtosecond laser pulses under a sulfuric atmosphere creates first a structured surface featuring cones of up to 20 microns in height, and second a 0.1 – 1 μ m thick layer of multi-crystalline silicon on theses cones containing up to 1 at.% sulfur acting as n-type dopant. Further, the sulfur establishes energy states within the band gap of silicon allowing for the absorption of infrared (IR) light with energies below the band gap energy of silicon. This black silicon process is distinguished by the fact that only one single laser process is required to tailor three material characteristics in on step: the surface structure, the doping and the light absorption. In this work we study structural and optical material characteristics of black silicon. For the first time this work presents properties of black silicon processed with shaped femtosecond laser pulses. Finally, black silicon substrate is used as substrate for manufacturing a black silicon solar cell with a femtosecond laser pulse formed sulfur emitter. For such a black silicon solar cell we achieved a record efficiency of η =4.5%

scholarly journals Micro/Nano Amorphization/Oxidation Of Silicon Induced By High Repetition Femtosecond Laser Pulses

2021 ◽  
Author(s):  
Amirkianoosh Kiani
Keyword(s):  
Solar Cell ◽  
Femtosecond Laser ◽  
Surface Temperature ◽  
Pulse Duration ◽  
Analytical Model ◽  
Repetition Rate ◽  
Crystalline Silicon ◽  
Laser Pulses ◽  
Femtosecond Laser Pulses ◽  
Laser Parameters

The main aim of this thesis is to develop a new method for direct micro/nano amorphization/oxidation of silicon using femtosecond laser irradiation and its applications in maskless lithography and solar cell fabrication. Amorphization and oxidation occur when crystalline silicon is exposed to the irradiation of femtosecond laser pulses below the ablation threshold. Mechanisms of morphization and oxidation were discussed and the surface temperature model was developed to study the relation between laser parameters and observed amorphization and oxidation. A systematic theoretical and experimental study of the influence of the laser parameters on the quality of amorphorized area and the size of the feature fabricated through amorphization has been studied. It was found that during the process of silicon amorphization and oxidation, the higher repetition rate of laser pulses yields smooth morphology with better repeatability. Increasing pulse duration and number of pulses were seen to increase the line width. However, increasing the number of pulses does not result in ablation of the target area. An analytical model was developed for the calculation of the average surface temperature after n-pulses. The effect of the laser pulse width was investigated by developing an analytical model for the calculation of the non-dimensional surface temperature with various pulse widths. It was found from experimental and analytical results that for a constant power and repetition rate, an increase in the pulse duration corresponds to a significant increase in the surface temperature. It results in an increase in the amount of modified material as well as improvement of light absorption in the case of amorphization. The main aim of this thesis is to develop a new method for direct micro/nano amorphization/oxidation of silicon using femtosecond laser irradiation and its applications in maskless lithography and solar cell fabrication.Amorphization and oxidation occur when crystalline silicon is exposed to the irradiation of femtosecond laser pulses below the ablation threshold. Mechanisms of morphization and oxidation were discussed and the surface temperature model was developed to study the relation between laser parameters and observed amorphization and oxidation. A systematic theoretical and experimental study of the influence of the laser parameters on the quality of amorphorized area and the size of the feature fabricated through amorphization has been studied. It was found that during the process of silicon amorphization and oxidation, the higher repetition rate of laser pulses yields smooth morphology with better repeatability. Increasing pulse duration and number of pulses were seen to increase the line width. However, increasing the number of pulses does not result in ablation of the target area. An analytical model was developed for the calculation of the average surface temperature after n-pulses.The effect of the laser pulse width was investigated by developing an analytical model for the calculation of the non-dimensional surface temperature with various pulse widths. It was found from experimental and analytical results that for a constant power and repetition rate, an increase in the pulse duration corresponds to a significant increase in the surface temperature. It results in an increase in the amount of modified material as well as improvement of light absorption in the case of amorphization.The amorphous silicon and silicon oxide can act as an etch stop. Therefore, maskless lithography iis possible with the direct patterning (amorphization and oxidation) of crystalline silicon. Experimental results have proved the feasibility of the proposed concepts. The thin-film of amorphous silicon generated on the silicon substrate has a potential for use in photovoltaic devices and solar cell fabrication. In comparison with previous methods, the direct oxidation/amorphization of silicon induced by the femtosecond laser is a maskless single-step technique which offers a higher flexibility and reduced processing time.

scholarly journals Micro/Nano Amorphization/Oxidation Of Silicon Induced By High Repetition Femtosecond Laser Pulses

2021 ◽  
Author(s):  
Amirkianoosh Kiani
Keyword(s):  
Solar Cell ◽  
Femtosecond Laser ◽  
Surface Temperature ◽  
Pulse Duration ◽  
Analytical Model ◽  
Repetition Rate ◽  
Crystalline Silicon ◽  
Laser Pulses ◽  
Femtosecond Laser Pulses ◽  
Laser Parameters

The main aim of this thesis is to develop a new method for direct micro/nano amorphization/oxidation of silicon using femtosecond laser irradiation and its applications in maskless lithography and solar cell fabrication. Amorphization and oxidation occur when crystalline silicon is exposed to the irradiation of femtosecond laser pulses below the ablation threshold. Mechanisms of morphization and oxidation were discussed and the surface temperature model was developed to study the relation between laser parameters and observed amorphization and oxidation. A systematic theoretical and experimental study of the influence of the laser parameters on the quality of amorphorized area and the size of the feature fabricated through amorphization has been studied. It was found that during the process of silicon amorphization and oxidation, the higher repetition rate of laser pulses yields smooth morphology with better repeatability. Increasing pulse duration and number of pulses were seen to increase the line width. However, increasing the number of pulses does not result in ablation of the target area. An analytical model was developed for the calculation of the average surface temperature after n-pulses. The effect of the laser pulse width was investigated by developing an analytical model for the calculation of the non-dimensional surface temperature with various pulse widths. It was found from experimental and analytical results that for a constant power and repetition rate, an increase in the pulse duration corresponds to a significant increase in the surface temperature. It results in an increase in the amount of modified material as well as improvement of light absorption in the case of amorphization. The main aim of this thesis is to develop a new method for direct micro/nano amorphization/oxidation of silicon using femtosecond laser irradiation and its applications in maskless lithography and solar cell fabrication.Amorphization and oxidation occur when crystalline silicon is exposed to the irradiation of femtosecond laser pulses below the ablation threshold. Mechanisms of morphization and oxidation were discussed and the surface temperature model was developed to study the relation between laser parameters and observed amorphization and oxidation. A systematic theoretical and experimental study of the influence of the laser parameters on the quality of amorphorized area and the size of the feature fabricated through amorphization has been studied. It was found that during the process of silicon amorphization and oxidation, the higher repetition rate of laser pulses yields smooth morphology with better repeatability. Increasing pulse duration and number of pulses were seen to increase the line width. However, increasing the number of pulses does not result in ablation of the target area. An analytical model was developed for the calculation of the average surface temperature after n-pulses.The effect of the laser pulse width was investigated by developing an analytical model for the calculation of the non-dimensional surface temperature with various pulse widths. It was found from experimental and analytical results that for a constant power and repetition rate, an increase in the pulse duration corresponds to a significant increase in the surface temperature. It results in an increase in the amount of modified material as well as improvement of light absorption in the case of amorphization.The amorphous silicon and silicon oxide can act as an etch stop. Therefore, maskless lithography iis possible with the direct patterning (amorphization and oxidation) of crystalline silicon. Experimental results have proved the feasibility of the proposed concepts. The thin-film of amorphous silicon generated on the silicon substrate has a potential for use in photovoltaic devices and solar cell fabrication. In comparison with previous methods, the direct oxidation/amorphization of silicon induced by the femtosecond laser is a maskless single-step technique which offers a higher flexibility and reduced processing time.

scholarly journals Large-Area Crystalline Silicon Solar Cell Using Novel Antireflective Nanoabsorber Texturing Surface by Multihollow Cathode Plasma System and Spin-On Doping

2013 ◽  
Vol 2013 ◽  
pp. 1-5 ◽  
Author(s):  
Utpal Gangopadhyay ◽  
Sukhendu Jana ◽  
Sayan Das
Keyword(s):  
Solar Cell ◽  
Hollow Cathode ◽  
Silicon Solar Cell ◽  
Crystalline Silicon ◽  
Low Cost ◽  
Black Silicon ◽  
Textured Surface ◽  
Crystalline Silicon Solar Cell ◽  
Rf Power ◽  
Large Area

We present 11.7% efficient p-type crystalline silicon solar cells with a nanoscale textured surface and no dielectric antireflection coating. We propose nanocrystalline-like textured surface consisting of nanocrystalline columnar structures of diameters from 50 to 100 nm and depth of about 500 nm formed by reactive-ion etching (RIE) in multihollow cathode system. This novel nano textured surface acts as an antireflective absorbing surface of c-Si abbreviate as ARNAB (antireflective nanoabsorber). Light shining on the surface of RIE-etched silicon bounces back and forth between the spikes in such a way that most of it never comes back. Radio frequency (RF) hollow cathode discharge allows an improvement of plasma density by an order of magnitude in comparison to standard RF parallel-plate discharge. Desirable black silicon layer has been achieved when RF power of about 20 Watt per one hollow cathode glow is applied for our multihollow cathode system. The RF power frequency was 13.56 MHz. The antireflection property of ARNAB textured surface has been investigated and compared with wet-textured and PECVD coated silicon samples. Solar cell using low-cost spin-on coating technique has been demonstrated in this paper. We have successfully achieved 11.7% efficient large area (98 cm2) ARNAB textured crystalline silicon solar cell using low-cost spin-on coating (SOD) doping.

Inscription of optical waveguides in crystalline silicon by mid-infrared femtosecond laser pulses

2005 ◽  
Vol 30 (9) ◽  
pp. 964 ◽  
Author(s):  
Amir H. Nejadmalayeri ◽  
Peter R. Herman ◽  
Jonas Burghoff ◽  
Matthias Will ◽  
Stefan Nolte ◽  
...  
Keyword(s):  
Femtosecond Laser ◽  
Optical Waveguides ◽  
Crystalline Silicon ◽  
Laser Pulses ◽  
Femtosecond Laser Pulses ◽  
Mid Infrared

scholarly journals An Investigation on a Crystalline-Silicon Solar Cell with Black Silicon Layer at the Rear

2017 ◽  
Vol 12 (1) ◽  
Author(s):  
Zhi-Quan Zhou ◽  
Fei Hu ◽  
Wen-Jie Zhou ◽  
Hong-Yan Chen ◽  
Lei Ma ◽  
...  
Keyword(s):  
Solar Cell ◽  
Silicon Solar Cell ◽  
Crystalline Silicon ◽  
Silicon Layer ◽  
Black Silicon ◽  
Crystalline Silicon Solar Cell
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