Comparative studies on photovoltaic performance of InN nanostructures/p-Si(100) heterojunction devices grown by molecular beam epitaxy

2012 ◽  
Vol 1391 ◽  
Author(s):  
Thirumaleshwara N Bhat ◽  
Mohana K Rajpalke ◽  
Mahesh Kumar ◽  
Basanta Roul ◽  
S B Krupanidhi
Keyword(s):  
Molecular Beam Epitaxy ◽  
Comparative Studies ◽  
Molecular Beam ◽  
Fill Factor ◽  
Photovoltaic Performance ◽  
Superior Performance ◽  
Photovoltaic Devices ◽  
Junction Area ◽  
Single Junction ◽  
Junction Property

ABSTRACTComparative studies have been carried out on the performance of the photovoltaic devices with dissimilar shapes of the InN nanostructures fabricated on p-Si (100). The devices fabricated with the nanodots show a superior performance compared to the devices fabricated with the nanorods. The discussions have been carried out on the superior junction property, larger effective junction area and inherent random pyramidal topographical texture of the cell fabricated with nanodots. Such single junction devices exhibit a promising fill factor and external quantum efficiency of 38% and 27%, respectively, under concentrated AM1.5 illumination.

Comparison of single junction AlGaInP and GaInP solar cells grown by molecular beam epitaxy

2015 ◽  
Vol 117 (9) ◽  
pp. 094504 ◽  
Author(s):  
Taizo Masuda ◽  
Stephanie Tomasulo ◽  
Jordan R. Lang ◽  
Minjoo Larry Lee
Keyword(s):  
Solar Cells ◽  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Single Junction

scholarly journals Fabrication and Evaluation of Two-Junction Carbon Thin Film Photovoltaic Devices

2018 ◽  
Vol 5 ◽  
Author(s):  
Hisato Kato ◽  
Yuki Yamamoto ◽  
Shinya Kato ◽  
Naoki Kishi ◽  
Tetsuo Soga
Keyword(s):  
Thin Film ◽  
Film Thickness ◽  
Glass Structure ◽  
Photovoltaic Performance ◽  
Photovoltaic Devices ◽  
Photovoltaic Properties ◽  
Single Junction ◽  
Carbon Thin Film ◽  
Ito Glass ◽  
Junction Type

In this work, we have fabricated the two-junction carbon photovoltaic devices which consisted of Al/fullerene (C60)/amorphous carbon (a-C)/C60/a-C/ITO glass structure. We also investigated their photovoltaic properties with the same bandgap and without involving the tunnel-connect layer. We found that the open-circuit voltage in the two-junction photovoltaic device almost doubled compared to the single-junction type and it confirmed that the tandem structure was successfully formed without any tunnel-junction although short-circuit current in the two-junction tended to decrease greatly in comparison to single-junction. Moreover, we studied the effect of film thickness of each film on the photovoltaic properties of two-junction carbon photovoltaic devices and as a result, there was a dependence of film thickness on the photovoltaic performance in the two-junction type. Thus, it can be concluded that the film thickness is one of the significant influences to enhance the photovoltaic performances and our results might be an important approach for fabricating the higher efficiency of two-junction carbon thin film photovoltaic devices made of different band gap.

Functionalized alkenyl side chains: a feasible strategy to improve charge transport and photovoltaic performance

2020 ◽  
Vol 8 (6) ◽  
pp. 2171-2177 ◽  
Author(s):  
Bing Zheng ◽  
Juan Liu ◽  
Xuexue Pan ◽  
Yu Zhang ◽  
Zaiyu Wang ◽  
...  
Keyword(s):  
Charge Transport ◽  
Effective Charge ◽  
Fill Factor ◽  
Photovoltaic Performance ◽  
Hole Mobility ◽  
Side Chains ◽  
Photovoltaic Devices ◽  
High Fill Factor

To pursue effective charge transport and high fill factor (FF) in photovoltaic devices, adopting ordered polymers with enhanced hole mobility is greatly desired.

GaP/Si-Based Photovoltaic Devices Grown by Molecular Beam Epitaxy

2018 ◽  
pp. 637-648 ◽  
Author(s):  
Charles Cornet ◽  
Mickaël Da Silva ◽  
Christophe Levallois ◽  
Olivier Durand
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Photovoltaic Devices

Defects in Heavily-Doped MBE GaAs

1982 ◽  
Vol 40 ◽  
pp. 442-445
Author(s):  
C.B. Carter ◽  
D.M. DeSimone ◽  
T. Griem ◽  
C.E.C. Wood
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Heavily Doped

Molecular-beam epitaxy (MBE) is potentially an extremely valuable tool for growing III-V compounds. The value of the technique results partly from the ease with which controlled layers of precisely determined composition can be grown, and partly from the ability that it provides for growing accurately doped layers.

An in situ and ex situ TEM study of the formation of thin cobalt silicide films by molecular beam epitaxy on the silicon (100) surface

1988 ◽  
Vol 46 ◽  
pp. 884-885
Author(s):  
D. Loretto ◽  
J. M. Gibson ◽  
S. M. Yalisove ◽  
R. T. Tung
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Defect Density ◽  
High Vacuum ◽  
Ultra High Vacuum ◽  
Ex Situ ◽  
Metal Base ◽  
In Situ Experiments ◽  
Potential Applications

The cobalt disilicide/silicon system has potential applications as a metal-base and as a permeable-base transistor. Although thin, low defect density, films of CoSi2 on Si(111) have been successfully grown, there are reasons to believe that Si(100)/CoSi2 may be better suited to the transmission of electrons at the silicon/silicide interface than Si(111)/CoSi2. A TEM study of the formation of CoSi2 on Si(100) is therefore being conducted. We have previously reported TEM observations on Si(111)/CoSi2 grown both in situ, in an ultra high vacuum (UHV) TEM and ex situ, in a conventional Molecular Beam Epitaxy system.The procedures used for the MBE growth have been described elsewhere. In situ experiments were performed in a JEOL 200CX electron microscope, extensively modified to give a vacuum of better than 10-9 T in the specimen region and the capacity to do in situ sample heating and deposition. Cobalt was deposited onto clean Si(100) samples by thermal evaporation from cobalt-coated Ta filaments.

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