Molecular beam epitaxy of InP single junction and InP/In[sub 0.53]Ga[sub 0.47]As monolithically integrated tandem solar cells using solid phosphorous source material
Keyword(s):
Doping control of GaAsPN alloys by molecular beam epitaxy for monolithic III-V/Si tandem solar cells
2017 ◽
Vol 473
◽
pp. 55-59
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Keyword(s):
2014 ◽
Vol 53
(5S1)
◽
pp. 05FV06
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2017 ◽
Vol 5
(36)
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pp. 19439-19446
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Keyword(s):