Terahertz Detectors Based on Silicon Technology Field Effect Transistors

2012 ◽  
Vol 1437 ◽  
Author(s):  
Wojciech Knap ◽  
Franz Schuster ◽  
Dominique Coquillat ◽  
Frédéric Teppe ◽  
Benoît Giffard ◽  
...  
Keyword(s):  
Field Effect ◽  
Large Scale ◽  
Field Effect Transistors ◽  
Low Cost ◽  
High Sensitivity ◽  
Focal Plane Arrays ◽  
Terahertz Detectors ◽  
Silicon Technology ◽  
Thz Detection ◽  
On Chip

ABSTRACTThe concept of THz detection based on excitation of plasma waves in two-dimensional electron gas in Si FETs is one of the most attractive ones, as it makes possible the development of the large-scale integrated devices based on a conventional microelectronic technology including on-chip antennas and readout devices integration. In this work we report on investigations of Terahertz detectors based on low-cost silicon technology field effect transistors. We show that detectors, consisting of a coupling antenna and a n-MOS field effect transistor as rectifying element, are efficient for THz detection and imaging. We demonstrate that in the atmospheric window around 300 GHz, these detectors can achieve a record noise equivalent power below 10 pW/Hz0.5 and a responsivity above 90 kV/W once integrated with on-chip amplifier. We show also that they can be used in a very wide frequency range: from ∼0.2 THz up to 1.1 THz. THz detection by Si FETs pave the way towards high sensitivity silicon technology based focal plane arrays for THz imaging.

scholarly journals Templated dewetting of single-crystal sub-millimeter-long nanowires and on-chip silicon circuits

2019 ◽  
Vol 10 (1) ◽  
Author(s):  
Monica Bollani ◽  
Marco Salvalaglio ◽  
Abdennacer Benali ◽  
Mohammed Bouabdellaoui ◽  
Meher Naffouti ◽  
...  
Keyword(s):  
Field Effect ◽  
Large Scale ◽  
Field Effect Transistors ◽  
State Of The Art ◽  
Spontaneous Formation ◽  
Surface Energy Anisotropy ◽  
Energy Anisotropy ◽  
On Chip ◽  
Silicon Based ◽  
Nano Wires

AbstractLarge-scale, defect-free, micro- and nano-circuits with controlled inter-connections represent the nexus between electronic and photonic components. However, their fabrication over large scales often requires demanding procedures that are hardly scalable. Here we synthesize arrays of parallel ultra-long (up to 0.75 mm), monocrystalline, silicon-based nano-wires and complex, connected circuits exploiting low-resolution etching and annealing of thin silicon films on insulator. Phase field simulations reveal that crystal faceting and stabilization of the wires against breaking is due to surface energy anisotropy. Wires splitting, inter-connections and direction are independently managed by engineering the dewetting fronts and exploiting the spontaneous formation of kinks. Finally, we fabricate field-effect transistors with state-of-the-art trans-conductance and electron mobility. Beyond the first experimental evidence of controlled dewetting of patches featuring a record aspect ratio of $$\sim$$~1/60000 and self-assembled $$\sim$$~mm long nano-wires, our method constitutes a distinct and promising approach for the deterministic implementation of atomically-smooth, mono-crystalline electronic and photonic circuits.

scholarly journals Recent Advances in Immobilization Strategies for Biomolecules in Sensors Using Organic Field-Effect Transistors

2020 ◽  
Vol 26 (6) ◽  
pp. 424-440
Author(s):  
Le Li ◽  
Siying Wang ◽  
Yin Xiao ◽  
Yong Wang
Keyword(s):  
Field Effect ◽  
Field Effect Transistors ◽  
Physical Adsorption ◽  
Low Cost ◽  
Covalent Binding ◽  
High Sensitivity ◽  
Detection Sensitivity ◽  
Biological Macromolecules ◽  
Organic Field Effect Transistors ◽  
Efficient Detection

Abstract Organic field-effect transistors (OFETs) are fabricated using organic semiconductors (OSCs) as the active layer in the form of thin films. Due to its advantages of high sensitivity, low cost, compact integration, flexibility, and printability, OFETs have been used extensively in the sensing area. For analysis platforms, the construction of sensing layers is a key element for their efficient detection capability. The strategy used to immobilize biomolecules in these devices is especially important for ensuring that the sensing functions of the OFET are effective. Generally, analysis platforms are developed by modifying the gate/electrolyte or OSC/electrolyte interface using biomolecules, such as enzymes, antibodies, or deoxyribonucleic acid (DNA) to ensure high selectivity. To provide better or more convenient biological immobilization methods for researchers in this field and thereby improve detection sensitivity, this review summarizes recent developments in the immobilization strategies used for biological macromolecules in OFETs, including cross-linking, physical adsorption, embedding, and chemical covalent binding. The influences of biomolecules on device performance are also discussed.

scholarly journals Growth of high-quality semiconducting tellurium films for high-performance p-channel field-effect transistors with wafer-scale uniformity

2022 ◽  
Vol 6 (1) ◽  
Author(s):  
Taikyu Kim ◽  
Cheol Hee Choi ◽  
Pilgyu Byeon ◽  
Miso Lee ◽  
Aeran Song ◽  
...  
Keyword(s):  
Field Effect ◽  
Physical Vapor Deposition ◽  
High Performance ◽  
Supply Voltage ◽  
Field Effect Transistors ◽  
Low Cost ◽  
Three Dimensional ◽  
Cmos Technology ◽  
Oxide Semiconductor ◽  
Wafer Scale

AbstractAchieving high-performance p-type semiconductors has been considered one of the most challenging tasks for three-dimensional vertically integrated nanoelectronics. Although many candidates have been presented to date, the facile and scalable realization of high-mobility p-channel field-effect transistors (FETs) is still elusive. Here, we report a high-performance p-channel tellurium (Te) FET fabricated through physical vapor deposition at room temperature. A growth route involving Te deposition by sputtering, oxidation and subsequent reduction to an elemental Te film through alumina encapsulation allows the resulting p-channel FET to exhibit a high field-effect mobility of 30.9 cm2 V−1 s−1 and an ION/OFF ratio of 5.8 × 105 with 4-inch wafer-scale integrity on a SiO2/Si substrate. Complementary metal-oxide semiconductor (CMOS) inverters using In-Ga-Zn-O and 4-nm-thick Te channels show a remarkably high gain of ~75.2 and great noise margins at small supply voltage of 3 V. We believe that this low-cost and high-performance Te layer can pave the way for future CMOS technology enabling monolithic three-dimensional integration.

scholarly journals High Magnetic Field Effects on Plasma Wave THz Detection in Field-Effect Transistors

2009 ◽  
Vol 116 (5) ◽  
pp. 939-940 ◽  
Author(s):  
S. Boubanga-Tombet ◽  
K. Nogajewski ◽  
F. Teppe ◽  
W. Knap ◽  
K. Karpierz ◽  
...  
Keyword(s):  
Magnetic Field ◽  
Plasma Wave ◽  
High Magnetic Field ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Magnetic Field Effects ◽  
Field Effects ◽  
Thz Detection

scholarly journals Correction: Large-scale sensor systems based on graphene electrolyte-gated field-effect transistors

The Analyst ◽  
2018 ◽  
Vol 143 (2) ◽  
pp. 580-580
Author(s):  
Charles Mackin ◽  
Tomás Palacios
Keyword(s):  
Field Effect ◽  
Large Scale ◽  
Field Effect Transistors ◽  
Sensor Systems

Correction for ‘Large-scale sensor systems based on graphene electrolyte-gated field-effect transistors’ by Charles Mackin, et al., Analyst, 2016, 141, 2704–2711.

Highly responsive screen-printed asymmetric pressure sensor based on laser-induced graphene

2021 ◽  
Author(s):  
Jiang Zhao ◽  
Jiahao Gui ◽  
Jinsong Luo ◽  
Jing Gao ◽  
Caidong Zheng ◽  
...  
Keyword(s):  
Pressure Sensor ◽  
Screen Printing ◽  
Large Scale ◽  
Low Cost ◽  
Pressure Sensors ◽  
High Sensitivity ◽  
Wearable Electronics ◽  
Integrated Sensor ◽  
Patterned Electrodes ◽  
Screen Printed

Abstract Graphene-based pressure sensors have received extensive attention in wearable devices. However, reliable, low-cost, and large-scale preparation of structurally stable graphene electrodes for flexible pressure sensors is still a challenge. Herein, for the first time, laser-induced graphene (LIG) powder are prepared into screen printing ink, and shape-controllable LIG patterned electrodes can be obtained on various substrates using a facile screen printing process, and a novel asymmetric pressure sensor composed of the resulting screen-printed LIG electrodes has been developed. Benefit from the 3D porous structure of LIG, the as-prepared flexible LIG screen-printed asymmetric pressure sensor has super sensing properties with a high sensitivity of 1.86 kPa−1, low detection limit of about 3.4 Pa, short response time, and long cycle durability. Such excellent sensing performances give our flexible asymmetric LIG screen-printed pressure sensor the ability to realize real-time detection of tiny body physiological movements (such as wrist pulse and pronunciation action). Besides, the integrated sensor array has a multi-touch function. This work could stimulate an appropriate approach to designing shape-controllable LIG screen-printed patterned electrodes on various flexible substrates to adapt the specific needs of fulfilling compatibility and modular integration for potential application prospects in wearable electronics.

Organic Materials for Multifunctional Transistor-Based Devices

2002 ◽  
Vol 725 ◽  
Author(s):  
H.E. Katz ◽  
T. Someya ◽  
B. Crone ◽  
X.M. Hong ◽  
M. Mushrush ◽  
...  
Keyword(s):  
Field Effect ◽  
Field Effect Transistors ◽  
Low Cost ◽  
Organic Field Effect Transistors ◽  
Large Area ◽  
Microprocessor Technology ◽  
Silicon Based ◽  
Electronic Ink ◽  
Made In ◽  
Charge Channel

Organic field-effect transistors (OFETs) are “soft material” versions of accumulationmode silicon-based FETs, where a gate field across a dielectric induces a conductive charge channel at the interface of the dielectric with a semiconductor, between source and drain electrodes. Charge carrier mobilities >0.01 and on/off ratios >10,000 are routinely obtained, adequate for a few specialized applications such as electrophoretic pixel switches but well below standards established for silicon microprocessor technology. Still, progress that has been made in solution-phase semiconductor deposition and the printing of contacts and dielectrics stimulates the development of OFET circuits for situations where extreme low cost, large area, and mechanical flexibility are important. Circuits with hundreds of OFETs have been demonstrated and a prototype OFETcontrolled black-on-white “electronic ink” sign has been fabricated.

High Performance Organic Field-Effect Transistors and Integrated Inverters

2001 ◽  
Vol 665 ◽  
Author(s):  
A. Ullmann ◽  
J. Ficker ◽  
W. Fix ◽  
H. Rost ◽  
W. Clemens ◽  
...  
Keyword(s):  
Field Effect ◽  
High Performance ◽  
Field Effect Transistors ◽  
Low Cost ◽  
Drain Current ◽  
Organic Field Effect Transistors ◽  
Metal Contacts ◽  
Gate Electrodes ◽  
Polymer Semiconductors ◽  
Set Up

ABSTRACTIntegrated plastic circuits (IPCs) will become an integral component of future low cost electronics. For low cost processes IPCs have to be made of all-polymer Transistors. We present our recent results on fabrication of Organic Field-Effect Transistors (OFETs) and integrated inverters. Top-gate transistors were fabricated using polymer semiconductors and insulators. The source-drain structures were defined by standard lithography of Au on a flexible plastic film, and on top of these electrodes, poly(3-alkylthiophene) (P3AT) as semiconductor, and poly(4-hydroxystyrene) (PHS) as insulator were homogeneously deposited by spin-coating. The gate electrodes consist of metal contacts. With this simple set-up, the transistors exhibit excellent electric performance with a high source-drain current at source - drain and gate voltages below 30V. The characteristics show very good saturation behaviour for low biases and are comparable to results published for precursor pentacene. With this setup we obtain a mobility of 0.2cm2/Vs for P3AT. Furthermore, we discuss organic integrated inverters exhibiting logic capability. All devices show shelf-lives of several months without encapsulation.

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