scholarly journals Correction: Large-scale sensor systems based on graphene electrolyte-gated field-effect transistors

The Analyst ◽  
2018 ◽  
Vol 143 (2) ◽  
pp. 580-580
Author(s):  
Charles Mackin ◽  
Tomás Palacios
Keyword(s):  
Field Effect ◽  
Large Scale ◽  
Field Effect Transistors ◽  
Sensor Systems

Correction for ‘Large-scale sensor systems based on graphene electrolyte-gated field-effect transistors’ by Charles Mackin, et al., Analyst, 2016, 141, 2704–2711.

Large-scale sensor systems based on graphene electrolyte-gated field-effect transistors

The Analyst ◽  
2016 ◽  
Vol 141 (9) ◽  
pp. 2704-2711 ◽  
Author(s):  
Charles Mackin ◽  
Tomás Palacios
Keyword(s):  
Measurement System ◽  
Field Effect ◽  
Large Scale ◽  
Field Effect Transistor ◽  
Field Effect Transistors ◽  
Sensor Systems ◽  
Array Architecture ◽  
Effect Transistor ◽  
Dc Characterization

This work reports a novel graphene electrolyte-gated field-effect transistor (EGFET) array architecture along with a compact, self-contained, and inexpensive measurement system that allows DC characterization of hundreds of graphene EGFETs as a function ofVDSandVGSwithin a matter of minutes.

Large-scale assembly of ‘type-switchable’ field effect transistors based on carbon nanotubes and nanoparticles

2010 ◽  
Vol 21 (34) ◽  
pp. 345301 ◽  
Author(s):  
Sung Myung ◽  
Sungjong Woo ◽  
Jiwoon Im ◽  
Hyungwoo Lee ◽  
Yo-Sep Min ◽  
...  
Keyword(s):  
Carbon Nanotubes ◽  
Field Effect ◽  
Large Scale ◽  
Field Effect Transistors

scholarly journals Templated dewetting of single-crystal sub-millimeter-long nanowires and on-chip silicon circuits

2019 ◽  
Vol 10 (1) ◽  
Author(s):  
Monica Bollani ◽  
Marco Salvalaglio ◽  
Abdennacer Benali ◽  
Mohammed Bouabdellaoui ◽  
Meher Naffouti ◽  
...  
Keyword(s):  
Field Effect ◽  
Large Scale ◽  
Field Effect Transistors ◽  
State Of The Art ◽  
Spontaneous Formation ◽  
Surface Energy Anisotropy ◽  
Energy Anisotropy ◽  
On Chip ◽  
Silicon Based ◽  
Nano Wires

AbstractLarge-scale, defect-free, micro- and nano-circuits with controlled inter-connections represent the nexus between electronic and photonic components. However, their fabrication over large scales often requires demanding procedures that are hardly scalable. Here we synthesize arrays of parallel ultra-long (up to 0.75 mm), monocrystalline, silicon-based nano-wires and complex, connected circuits exploiting low-resolution etching and annealing of thin silicon films on insulator. Phase field simulations reveal that crystal faceting and stabilization of the wires against breaking is due to surface energy anisotropy. Wires splitting, inter-connections and direction are independently managed by engineering the dewetting fronts and exploiting the spontaneous formation of kinks. Finally, we fabricate field-effect transistors with state-of-the-art trans-conductance and electron mobility. Beyond the first experimental evidence of controlled dewetting of patches featuring a record aspect ratio of $$\sim$$~1/60000 and self-assembled $$\sim$$~mm long nano-wires, our method constitutes a distinct and promising approach for the deterministic implementation of atomically-smooth, mono-crystalline electronic and photonic circuits.

scholarly journals Small-Signal Capacitance and Current Parameter Modeling in Large-Scale High-Frequency Graphene Field-Effect Transistors

2013 ◽  
Vol 60 (6) ◽  
pp. 1799-1806 ◽  
Author(s):  
Gennady I. Zebrev ◽  
Alexander A. Tselykovskiy ◽  
Daria K. Batmanova ◽  
Evgeny V. Melnik
Keyword(s):  
High Frequency ◽  
Field Effect ◽  
Large Scale ◽  
Field Effect Transistors ◽  
Small Signal ◽  
Current Parameter

An innovative large scale integration of silicon nanowire-based field effect transistors

2018 ◽  
Vol 143 ◽  
pp. 97-102 ◽  
Author(s):  
M. Legallais ◽  
T.T.T. Nguyen ◽  
M. Mouis ◽  
B. Salem ◽  
E. Robin ◽  
...  
Keyword(s):  
Field Effect ◽  
Large Scale ◽  
Field Effect Transistors ◽  
Silicon Nanowire ◽  
Large Scale Integration ◽  
Scale Integration

scholarly journals Bandgap Engineering of an Aryl-Fused Tetrathianaphthalene for Visible-Blind Organic Field-Effect Transistors

2021 ◽  
Vol 9 ◽  
Author(s):  
Lijuan Zhang ◽  
Xinzi Tian ◽  
Yantao Sun ◽  
Jiarong Yao ◽  
Shuyuan Yang ◽  
...  
Keyword(s):  
Field Effect ◽  
Large Scale ◽  
Near Infrared ◽  
Field Effect Transistors ◽  
Ambient Air ◽  
Operational Stability ◽  
Environmental Stability ◽  
Organic Field Effect Transistors ◽  
Major Barrier ◽  
Visible Blind

Stability problem of organic semiconductors (OSCs) because of photoabsorption has become a major barrier to large scale applications in organic field-effect transistors (OFETs). It is imperative to design OSCs which are insensitive to visible and near-infrared (VNIR) light to obtain both environmental and operational stability. Herein, taking a 2,3,8,9-tetramethoxy [1,4]benzodithiino[2,3-b][1,4]benzodithiine (TTN2) as an example, we show that controlling molecular configuration is an effective strategy to tune the bandgaps of OSCs for visible-blind OFETs. TTN2 adopts an armchair-like configuration, which is different from the prevailing planar structure of common OSCs. Because of the large bandgap, TTN2 exhibits no photoabsorption in the VNIR region and OFETs based on TTN2 show high environmental stability. The devices worked well after being stored in ambient air, (i.e. in the presence of oxygen and water) and light for over two years. Moreover, the OFETs show no observable response to light irradiation from 405–1,020 nm, which is also favorable for high operational stability.

Brush-controlled oriented growth of TCNQ microwire arrays for field-effect transistors

2016 ◽  
Vol 4 (3) ◽  
pp. 433-439 ◽  
Author(s):  
Peng Zhang ◽  
Qingxin Tang ◽  
Yanhong Tong ◽  
Xiaoli Zhao ◽  
Guorui Wang ◽  
...  
Keyword(s):  
Field Effect ◽  
Large Scale ◽  
Field Effect Transistors ◽  
Flexible Substrates ◽  
Oriented Growth ◽  
Controllable Fabrication

We demonstrate a solution-based method by a writing brush to realize the controllable fabrication of highly-oriented and large-scale TCNQ microwire arrays, which can be grown on rigid and flexible substrates.

scholarly journals Highly Aligned Polymeric Nanowire Etch-Mask Lithography Enabling the Integration of Graphene Nanoribbon Transistors

Nanomaterials ◽  
2020 ◽  
Vol 11 (1) ◽  
pp. 33
Author(s):  
Sangheon Jeon ◽  
Pyunghwa Han ◽  
Jeonghwa Jeong ◽  
Wan Sik Hwang ◽  
Suck Won Hong
Keyword(s):  
Field Effect ◽  
High Performance ◽  
Large Scale ◽  
Field Effect Transistors ◽  
Graphene Nanoribbons ◽  
Chemical Vapor ◽  
Spatial Arrangement ◽  
Deposition Process ◽  
Graphene Monolayer ◽  
Polymer Nanowires

Graphene nanoribbons are a greatly intriguing form of nanomaterials owing to their unique properties that overcome the limitations associated with a zero bandgap of two-dimensional graphene at room temperature. Thus, the fabrication of graphene nanoribbons has garnered much attention for building high-performance field-effect transistors. Consequently, various methodologies reported previously have brought significant progress in the development of highly ordered graphene nanoribbons. Nonetheless, easy control in spatial arrangement and alignment of graphene nanoribbons on a large scale is still limited. In this study, we explored a facile, yet effective method for the fabrication of graphene nanoribbons by employing orientationally controlled electrospun polymeric nanowire etch-mask. We started with a thermal chemical vapor deposition process to prepare graphene monolayer, which was conveniently transferred onto a receiving substrate for electrospun polymer nanowires. The polymeric nanowires act as a robust etching barrier underlying graphene sheets to harvest arrays of the graphene nanoribbons. On varying the parametric control in the process, the size, morphology, and width of electrospun polymer nanowires were easily manipulated. Upon O2 plasma etching, highly aligned arrays of graphene nanoribbons were produced, and the sacrificial polymeric nanowires were completely removed. The graphene nanoribbons were used to implement field-effect transistors in a bottom-gated configuration. Such approaches could realistically yield a relatively improved current on–off ratio of ~30 higher than those associated with the usual micro-ribbon strategy, with the clear potential to realize reproducible high-performance devices.

Large-scale fabrication of field-effect transistors based on solution-grown organic single crystals

2015 ◽  
Vol 60 (12) ◽  
pp. 1122-1127 ◽  
Author(s):  
Shuang Liu ◽  
Jia-Ke Wu ◽  
Cong-Cheng Fan ◽  
Guo-Biao Xue ◽  
Hong-Zheng Chen ◽  
...  
Keyword(s):  
Single Crystals ◽  
Field Effect ◽  
Large Scale ◽  
Field Effect Transistors

Large-Scale Atomically Thin Monolayer 2H-MoS2 Field-Effect Transistors

2020 ◽  
Vol 3 (8) ◽  
pp. 7371-7376
Author(s):  
Nitin Babu Shinde ◽  
Beo Deul Ryu ◽  
Kalaiarasan Meganathan ◽  
Bellarmine Francis ◽  
Chang-Hee Hong ◽  
...  
Keyword(s):  
Field Effect ◽  
Large Scale ◽  
Field Effect Transistors
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