Effect of Si2H6 as a gas phase additive to increase growth rate of a-Si:H films and solar cells

2012 ◽  
Vol 1426 ◽  
pp. 415-420 ◽  
Author(s):  
Lala Zhu ◽  
Ujjwal K Das ◽  
Chandan Das ◽  
Steven S Hegedus
Keyword(s):  
Growth Rate ◽  
Gas Phase ◽  
Film Growth ◽  
Optical Emission ◽  
High Energy ◽  
Gas Mixtures ◽  
Layer Growth ◽  
Rf Power ◽  
Defect Parameter ◽  
Cell Efficiency

ABSTRACTWe have studied the growth rate enhancement of a-Si:H films using Si2H6 as a gas phase additive to SiH4+ H2 gas mixtures using relatively low pressure and standard 13.56 MHz RF power. With the addition of 1.7% Si2H6 in the gas mixtures (10% more Si atoms into the chamber), the a-Si:H film growth rate increased by ∼30% at 1.25 Torr and ∼60% at 2.5 Torr. The optical emission spectroscopy (OES) exhibits reduction of SiH* intensity with addition of Si2H6, which indicates the reduction of high energy electron impacts with Si containing molecules. The microstructural defect parameter (fraction of dihydride bonding in the film) appears to decrease with increase of RF power (i.e. increase of growth rate). Similar a-Si:H p-i-n cell efficiency 7-8% is achieved with and without enhanced i layer growth rate with the Si2H6additive.

Direct Nucleation of Crystalline SiGe on Substrates by Reactive Thermal CVD with Si2H6 and GeF4

1997 ◽  
Vol 467 ◽  
Author(s):  
Fumio Yoshizawa ◽  
Kunihiro Shiota ◽  
Daisuke Inoue ◽  
Jun-ichi Hanna
Keyword(s):  
Growth Rate ◽  
Gas Phase ◽  
Heterogeneous Nucleation ◽  
Homogeneous Nucleation ◽  
Film Growth ◽  
Early Stage ◽  
Gaseous Mixture ◽  
The Other ◽  
Thermal Cvd ◽  
Initial Deposition

ABSTRACTPolycrystalline SiGe (poly-SiGe) film growth by reactive thermal CVD with a gaseous mixture of Si2H6 and GeF4 was investigated on various substrates such as Al,Cr, Pt, Si, ITO, ZnO and thermally grown SiO2.In Ge-rich film growth, SEM observation in the early stage of the film growth revealed that direct nucleation of crystallites took place on the substrates. The nucleation was governed by two different mechanisms: one was a heterogeneous nucleation on the surface and the other was a homogeneous nucleation in the gas phase. In the former case, the selective nucleation was observed at temperatures lower than 400°C on metal substrates and Si, where the activation of adsorbed GeF4 on the surface played a major role for the nuclei formation, leading to the selective film growth.On the other hand, the direct nucleation did not always take place in Si-rich film growth irrespective of the substrates and depended on the growth rate. In a growth rate of 3.6nm/min, the high crystallinity of poly-Si0.95Ge0.05in a 220nm-thick film was achieved at 450°C due to the no initial deposition of amorphous tissue on SiO2 substrates.

scholarly journals Особенности начальной стадии гетероэпитаксии слоев кремния на германии при их выращивании из гидридов кремния

2019 ◽  
Vol 53 (7) ◽  
pp. 995 ◽  
Author(s):  
Л.К. Орлов ◽  
Н.Л. Ивина ◽  
В.А. Боженкин
Keyword(s):  
Growth Rate ◽  
Film Growth ◽  
Molecular Beams ◽  
Layer Growth ◽  
Growth Surface ◽  
Physicochemical Processes ◽  
Germanium Surface ◽  
Kinetic Coefficients ◽  
Comparison Of The Results ◽  
Hydride Method

AbstractData on the dependence of the growth rate of Si layers deposited onto Ge(111) by the hydride method on their thickness at the initial heteroepitaxy stage are reported. The effect of a Ge substrate within ten grown silicon single layers on the Si-film growth rate is demonstrated. Based on the data obtained, the kinetic coefficients responsible for the rate of the main physicochemical processes related to the interaction of hydride molecular beams with the growth surface are calculated. An analysis of the capture probability and rates of pyrolysis of the adsorbed Si(Ge) hydride molecules on the pure Ge(Si) surfaces reveals the dependence of their behavior on the growing-layer thickness. Comparison of the results obtained during Si-layer growth on Ge shows that the pure germanium surface has higher adsorption and catalytic abilities with respect to silane molecules than the pure Si surface. The unstrained pure Si surface has higher adsorption and catalytic characteristics with respect to Ge-hydride molecules.

Comparative Study on in-situ Ellipsometric Monitoring of III-Nitride Film Growth via Plasma-Enhanced Atomic Layer Deposition

2019 ◽  
Vol 28 (03n04) ◽  
pp. 1940020
Author(s):  
Adnan Mohammad ◽  
Deepa Shukla ◽  
Saidjafarzoda Ilhom ◽  
Brian Willis ◽  
Ali Kemal Okyay ◽  
...  
Keyword(s):  
Growth Rate ◽  
Real Time ◽  
Film Growth ◽  
Atomic Layer ◽  
Layer Growth ◽  
In Situ Monitoring ◽  
Rf Plasma ◽  
Nitride Film ◽  
The Impact

In this paper a comparative in-situ ellipsometric analysis is carried out on plasma-assisted ALD-grown III-nitride (AlN, GaN, and InN) films. The precursors used are TMA, TMG, and TMI for AlN, GaN, and InN respectively, while Ar is used as purge gas. For all of the films N2/H2/Ar plasma was used as the co-reactant. The work includes real-time in-situ monitored saturation curves, unit ALD cycle analysis, and >500 cycle film growth runs. In addition, the films are grown at different substrate temperatures to observe the impact of temperature not only on the growth rate but on how it influenced the precursor chemisorption, ligand removal, and nitrogen incorporation surface reactions. All three nitride films confirm fairly linear growth character. The growth rate per cycle (GPC) for each film is also measured with respect to rf-plasma power to obtain the surface saturation conditions during ALD growth. The real-time in-situ monitoring of the film growth can really be beneficial to understand the atomic layer growth and film formation in each individual ALD cycle.

Oxygen Pressure Dependence of Morphology of Morphology of La2-xSrxCuO4 Ultra-Thin Films

1997 ◽  
Vol 11 (21n22) ◽  
pp. 981-987
Author(s):  
H. Q. Yin ◽  
T. Arakawa ◽  
Y. Kaneda ◽  
T. Yoshikawa ◽  
N. Haneji ◽  
...  
Keyword(s):  
Thin Films ◽  
Pressure Dependence ◽  
Film Growth ◽  
Ambient Pressure ◽  
High Energy ◽  
Layer Growth ◽  
Growth Mode ◽  
Layer By Layer ◽  
Island Growth ◽  
Experimental Conditions

La 2-x Sr x CuO 4 ultra-thin films with thickness 200 Å were fabricated by pulsed laser deposition method in oxygen ( O 2) atmosphere. The morphology of deposited films was investigated by reflection high energy electron diffraction (RHEED), atomic force microscopy (AFM) and scanning electronic microscopy (SEM). The strong oxygen ambient pressure dependence of film morphology was observed. In high oxygen ambient pressure, the film growth is dominated by island growth mode. The results imply that the experimental conditions of oxygen ambient pressure and substrate temperature are critical for the layer-by-layer growth mode.

FIELD EMISSION STUDIES OF NITROGEN-DOPED DIAMOND-LIKE CARBON FILMS DEPOSITED USING CH4/N2/Ne and CH4/NH3/Ne RF PLASMAS

2000 ◽  
Vol 14 (02n03) ◽  
pp. 295-300 ◽  
Author(s):  
M. T. KUO ◽  
P. W. MAY ◽  
A. GUNN ◽  
J. C. MARSHALL ◽  
M. N. R. ASHFOLD ◽  
...  
Keyword(s):  
Growth Rate ◽  
Field Emission ◽  
Flow Rate ◽  
Threshold Voltage ◽  
Film Growth ◽  
Maximum Growth ◽  
Gas Mixtures ◽  
Carbon Films ◽  
Diamond Like Carbon ◽  
N Content

Hydrogenated diamond-like Carbon (DLC) films have been deposited on Si substrates using CH 4-based radio-frequency plasmas. The films have been doped with nitrogen by addition of either N2 or NH 3 into the source gas mixture, producing films with up to 16% and 25% N content, respectively. The effect of additions of Ne to these gas mixtures has been investigated as a possible method to increase the growth rate and the N-content of the films. We find that addition of Ne increases the film growth rate until the Ne flow rate equals that of the CH 4, giving maximum growth rate increases of 70% and 200% for NH 3 and N 2 containing gas mixtures, respectively. At the same time the field emission threshold voltage decreases by a factor of ~0.5 and 2, respectively. With further increases in Ne flow rate, the film growth rates decrease in both cases, whilst the threshold voltage increases. Micro-combustion measurements show that the N content within the films is proportional to the percentage of the N-containing precursor in the gas phase, but is independent of Ne concentration.

Pb Induced Layer-by-Layer Growth and the Dependence on an Amount of Surfactant in the Growth of Ni on Ni(100) Surface

1996 ◽  
Vol 441 ◽  
Author(s):  
M. Iwanami ◽  
M. Kamiko ◽  
T. Matsumoto ◽  
R. Yamamoto
Keyword(s):  
Film Growth ◽  
Three Dimensional ◽  
High Energy ◽  
Layer Growth ◽  
Embedded Atom Method ◽  
Layer By Layer ◽  
Homoepitaxial Growth ◽  
Embedded Atom ◽  
Series Of Experiments ◽  
Modified Embedded Atom Method

AbstractSurfactant epitaxy has been expected to be a powerful method to improve thin film growth from three dimensional island mode to layer-by-layer growth one. Supposing that Pb is the surfactant and Ni is the substrate and deposition metal, we have investigated how the surfactant atoms segregate on surface by computer simulations using the modified embedded atom method. To verify the effect of Pb on the homoepitaxial growth of Ni, we have performed a series of experiments on the growth of Ni on Ni(100) surface with and without Pb using reflection high energy electron diffraction (RHEED). It was clearly found that Pb induced layer-by-layer growth of Ni metal film. The result of the dependence of the growth behavior on the thickness of Pb layer suggests that there is the most suitable thickness of a surfactant layer which is not always the monolayer.

Energy Dependent Growth Rates of AIN using Pulsed Supersonic Jets

1997 ◽  
Vol 482 ◽  
Author(s):  
V. W. Ballarotto ◽  
M. E. Kordesch
Keyword(s):  
Growth Rate ◽  
Kinetic Energy ◽  
Film Growth ◽  
High Energy ◽  
Supersonic Jets ◽  
Number Density ◽  
Ammonia Gas ◽  
Dependent Growth ◽  
Energy Dependent

AbstractAIN films were grown on Si< 100 >, using unskimmed pulsed supersonic jets of ammonia and trimethylaluminum (TMA). By seeding the ammonia gas in hydrogen or helium, several different energies of the N precursor were used to examine the effect of N kinetic energy on the growth rate of AIN. The energy of the Al precursor, TMA, was 130 meV in all cases. The highest growth rate (0.115 μm/hr) was achieved with the high energy ammonia jet. The role of number density on film growth is discussed.

Modifications of a JEOL 2000EX TEM for insSitu surface studies

1993 ◽  
Vol 51 ◽  
pp. 640-641
Author(s):  
Michael T. Marshall ◽  
Xianghong Tong ◽  
J. Murray Gibson
Keyword(s):  
Electron Diffraction ◽  
Surface Science ◽  
Film Growth ◽  
High Vacuum ◽  
High Energy ◽  
Energy Electron ◽  
Ultra High Vacuum ◽  
Transmission Electron ◽  
Fundamental Insight

We have modified a JEOL 2000EX Transmission Electron Microscope (TEM) to allow in-situ ultra-high vacuum (UHV) surface science experiments as well as transmission electron diffraction and imaging. Our goal is to support research in the areas of in-situ film growth, oxidation, and etching on semiconducter surfaces and, hence, gain fundamental insight of the structural components involved with these processes. The large volume chamber needed for such experiments limits the resolution to about 30 Å, primarily due to electron optics. Figure 1 shows the standard JEOL 2000EX TEM. The UHV chamber in figure 2 replaces the specimen area of the TEM, as shown in figure 3. The chamber is outfitted with Low Energy Electron Diffraction (LEED), Auger Electron Spectroscopy (AES), Residual Gas Analyzer (RGA), gas dosing, and evaporation sources. Reflection Electron Microscopy (REM) is also possible. This instrument is referred to as SHEBA (Surface High-energy Electron Beam Apparatus).The UHV chamber measures 800 mm in diameter and 400 mm in height. JEOL provided adapter flanges for the column.

Diffusion model for deposition of epitaxial GaAs layers prepared by the MOCVD method

1991 ◽  
Vol 56 (10) ◽  
pp. 2020-2029
Author(s):  
Jindřich Leitner ◽  
Petr Voňka ◽  
Josef Stejskal ◽  
Přemysl Klíma ◽  
Rudolf Hladina
Keyword(s):  
Experimental Data ◽  
Growth Rate ◽  
Kinetic Model ◽  
Gas Phase ◽  
Substrate Surface ◽  
Deposition Process ◽  
Hydrogen Atmosphere ◽  
Epitaxial Gaas ◽  
Kinetics Of ◽  
Good Agreement

The authors proposed and treated quantitatively a kinetic model for deposition of epitaxial GaAs layers prepared by reaction of trimethylgallium with arsine in hydrogen atmosphere. The transport of gallium to the surface of the substrate is considered as the controlling process. The influence of the rate of chemical reactions in the gas phase and on the substrate surface on the kinetics of the deposition process is neglected. The calculated dependence of the growth rate of the layers on the conditions of the deposition is in a good agreement with experimental data in the temperature range from 600 to 800°C.

Sign in / Sign up

Export Citation Format

Share Document