Electrical and thermal analysis of AlGaN/GaN HEMTs transferred onto diamond substrate through an aluminum nitride layer

2021 ◽  
Author(s):  
Mahmoud Abou Daher ◽  
Marie Lesecq ◽  
Nicolas Defrance ◽  
Etienne Okada ◽  
Bertrand Boudart ◽  
...  
Keyword(s):  
Thermal Analysis ◽  
Aluminum Nitride ◽  
Nitride Layer ◽  
Diamond Substrate ◽  
Gan Hemts

Nonlinear Thermal Analysis of AlGaN/GaN HEMTs With Temperature-Dependent Parameters

2021 ◽  
pp. 1-6
Author(s):  
Min Tang ◽  
Liang Chen ◽  
Bo Li ◽  
Haikun Yue ◽  
Yang Tang ◽  
...  
Keyword(s):  
Thermal Analysis ◽  
Temperature Dependent ◽  
Gan Hemts

Elimination of the Low Resistivity of Si Substrates in GaN HEMTs by Introducing a SiC Intermediate and a Thick Nitride Layer

2020 ◽  
Vol 41 (10) ◽  
pp. 1480-1483
Author(s):  
Arijit Bose ◽  
Debaleen Biswas ◽  
Shigeomi Hishiki ◽  
Sumito Ouchi ◽  
Koichi Kitahara ◽  
...  
Keyword(s):  
Nitride Layer ◽  
Low Resistivity ◽  
Si Substrates ◽  
Gan Hemts

Alumina-Based Functional Materials Hardened with Al or Ti and Al-nitride or Ti-nitride Dispersions

2010 ◽  
Vol 1276 ◽  
Author(s):  
José G. Miranda-Hernández ◽  
Elizabeth Refugio-Garcia ◽  
Elizabeth Garfias-García ◽  
Enrique Rocha-Rangel
Keyword(s):  
Aluminum Nitride ◽  
Titanium Nitride ◽  
Functional Materials ◽  
High Energy ◽  
Nitride Layer ◽  
Layer Growth ◽  
Density Level ◽  
Functional Material ◽  
Energy Ball ◽  
Titanium Powders

AbstractThe synthesis of Al2O3-based functional materials having 10 vol. % of fine aluminum or titanium and aluminum-disperse or titanium-dispersed nitride hardened-particles has been explored. Two experimental steps have been set for the synthesis; specifically, sintering of Al2O3-aluminum or Al2O3-titanium powders which were thoroughly mixed under high energy ball-milling, pressureless-sintered at 1400°C during 1 h in argon atmosphere and then for the second step it was induced formation of aluminum nitride or titanium nitride at 500°C during different times (24, 72 and 120 h) by a nitriding process via immersion in ammoniac salts. SEM analyses of the microstructures obtained in nitride bodies were performed in order to know the effect of the ammoniac salts used as nitrating on the microstructure of aluminum or titanium for each studied functional material. It was observed that an aluminum nitride or titanium nitride layer growth from the surface into the bulk and reaches different depth as the nitriding time of the functional material was increased. The use of aluminum or titanium significantly enhanced density level and hardness of the functional materials.

Dislocation Reactions in a Semipolar Gallium Nitride Layer Grown on a Vicinal Si(001) Substrate Using Aluminum Nitride and 3C–SiC Buffer Layers

2019 ◽  
Vol 61 (12) ◽  
pp. 2316-2320
Author(s):  
L. M. Sorokin ◽  
M. Yu. Gutkin ◽  
A. V. Myasoedov ◽  
A. E. Kalmykov ◽  
V. N. Bessolov ◽  
...  
Keyword(s):  
Gallium Nitride ◽  
Aluminum Nitride ◽  
Nitride Layer ◽  
Buffer Layers

AlGaN/GaN HEMTs on diamond substrate with over 7 W/mm output power density at 10 GHz

2013 ◽  
Vol 49 (20) ◽  
pp. 1298-1299 ◽  
Author(s):  
D.C. Dumka ◽  
T.M. Chou ◽  
F. Faili ◽  
D. Francis ◽  
F. Ejeckam
Keyword(s):  
Power Density ◽  
Output Power ◽  
Diamond Substrate ◽  
Gan Hemts

High quality aluminum nitride layer grown with a combined step of nitridation and trimethylaluminum preflow

2021 ◽  
pp. 138915
Author(s):  
Y. Yusuf ◽  
M.E.A. Samsudin ◽  
M.A.A.Z. Md. Sahar ◽  
Z. Hassan ◽  
W. Maryam ◽  
...  
Keyword(s):  
Aluminum Nitride ◽  
Nitride Layer ◽  
High Quality
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