scholarly journals Insertion of a Graphene Oxide Layer into a Cu/SiO2/Pt Structure to Overcome Performance Degradation in a Vaporless Environment

2019 ◽  
Vol 9 (7) ◽  
pp. 1432
Author(s):  
Chih-Yi Liu ◽  
Chun-Hung Lai ◽  
Chao-Cheng Lin ◽  
Chih-Peng Yang
Keyword(s):  
Graphene Oxide ◽  
Random Access ◽  
Resistive Random Access Memory ◽  
Photoelectron Spectra ◽  
Switching Behavior ◽  
Schematic Model ◽  
Access Memory ◽  
Electrical Field ◽  
Pt Electrode ◽  
Cu Ions

A Cu/SiO2/Pt structure is usually used to study the resistive memory properties of an electrochemical resistive random access memory. It can be reversibly switched between low- and high-resistance states by using DC voltages in the atmosphere. However, its resistive switching behavior disappears in a vaporless environment because no conducting filaments can be formed within the Cu/SiO2/Pt structure. This study inserted a graphene oxide (GO) layer to fabricate a Cu/GO/SiO2/Pt structure that could be resistively switched in a vaporless environment. The X-ray photoelectron spectra depth profile of the Cu/GO/SiO2/Pt structure showed that oxygen-related groups of the GO film reacted with the Cu electrode. The GO film assisted Cu ionization in a vaporless environment, and Cu ions could migrate in an electrical field to the Pt electrode. Cu conducting filaments were formed and ruptured by different polarity voltages, and the resistance of the Cu/GO/SiO2/Pt structure could be reversibly switched in a vaporless environment. A schematic model was proposed to explain the switching mechanisms in the atmosphere and a vaporless environment.

High-performance flexible resistive random access memory devices based on graphene oxidized with a perpendicular oxidation gradient

Nanoscale ◽  
2021 ◽  
Author(s):  
Tariq Aziz ◽  
Shi-Jing Wei ◽  
Yun Sun ◽  
Lai-Peng Ma ◽  
Songfeng Pei ◽  
...  
Keyword(s):  
Graphene Oxide ◽  
High Performance ◽  
Random Access ◽  
Random Access Memory ◽  
Resistive Random Access Memory ◽  
Switching Behavior ◽  
Memory Devices ◽  
Access Memory ◽  
Resistive Layer ◽  
Homogeneous Oxidation

The conventional strategy of fabricating resistive random access memory (RRAM) based on graphene oxide is limited to a resistive layer with homogeneous oxidation, and the switching behavior relies on its...

scholarly journals Improved Device Distribution in High-Performance SiNx Resistive Random Access Memory via Arsenic Ion Implantation

Nanomaterials ◽  
2021 ◽  
Vol 11 (6) ◽  
pp. 1401
Author(s):  
Te Jui Yen ◽  
Albert Chin ◽  
Vladimir Gritsenko
Keyword(s):  
High Performance ◽  
Conduction Mechanism ◽  
Random Access ◽  
Random Access Memory ◽  
Resistive Random Access Memory ◽  
Switching Behavior ◽  
Access Memory ◽  
Current Voltage ◽  
Current Voltage Characteristics ◽  
Limited Conduction

Large device variation is a fundamental challenge for resistive random access memory (RRAM) array circuit. Improved device-to-device distributions of set and reset voltages in a SiNx RRAM device is realized via arsenic ion (As+) implantation. Besides, the As+-implanted SiNx RRAM device exhibits much tighter cycle-to-cycle distribution than the nonimplanted device. The As+-implanted SiNx device further exhibits excellent performance, which shows high stability and a large 1.73 × 103 resistance window at 85 °C retention for 104 s, and a large 103 resistance window after 105 cycles of the pulsed endurance test. The current–voltage characteristics of high- and low-resistance states were both analyzed as space-charge-limited conduction mechanism. From the simulated defect distribution in the SiNx layer, a microscopic model was established, and the formation and rupture of defect-conductive paths were proposed for the resistance switching behavior. Therefore, the reason for such high device performance can be attributed to the sufficient defects created by As+ implantation that leads to low forming and operation power.

scholarly journals Surface effects of electrode-dependent switching behavior of resistive random-access memory

2016 ◽  
Vol 109 (13) ◽  
pp. 131603 ◽  
Author(s):  
Jr-Jian Ke ◽  
Tzu-Chiao Wei ◽  
Dung-Sheng Tsai ◽  
Chun-Ho Lin ◽  
Jr-Hau He
Keyword(s):  
Random Access ◽  
Random Access Memory ◽  
Surface Effects ◽  
Resistive Random Access Memory ◽  
Switching Behavior ◽  
Access Memory

Scanning transmission X-ray microscopy probe forin situmechanism study of graphene-oxide-based resistive random access memory

2013 ◽  
Vol 21 (1) ◽  
pp. 170-176 ◽  
Author(s):  
Hyun Woo Nho ◽  
Jong Yun Kim ◽  
Jian Wang ◽  
Hyun-Joon Shin ◽  
Sung-Yool Choi ◽  
...  
Keyword(s):  
Graphene Oxide ◽  
Random Access ◽  
Random Access Memory ◽  
Resistive Random Access Memory ◽  
Ex Situ ◽  
Access Memory ◽  
Bipolar Resistive Switching ◽  
X Ray ◽  
Scanning Transmission

Here, anin situprobe for scanning transmission X-ray microscopy (STXM) has been developed and applied to the study of the bipolar resistive switching (BRS) mechanism in an Al/graphene oxide (GO)/Al resistive random access memory (RRAM) device. To performin situSTXM studies at the CK- and OK-edges, both the RRAM junctions and theI0junction were fabricated on a single Si3N4membrane to obtain local XANES spectra at these absorption edges with more delicateI0normalization. Using this probe combined with the synchrotron-based STXM technique, it was possible to observe unique chemical changes involved in the BRS process of the Al/GO/Al RRAM device. Reversible oxidation and reduction of GO induced by the externally applied bias voltages were observed at the OK-edge XANES feature located at 538.2 eV, which strongly supported the oxygen ion drift model that was recently proposed fromex situtransmission electron microscope studies.

scholarly journals Effects of Electrodes on the Switching Behavior of Strontium Titanate Nickelate Resistive Random Access Memory

Materials ◽  
2015 ◽  
Vol 8 (10) ◽  
pp. 7191-7198 ◽  
Author(s):  
Ke-Jing Lee ◽  
Li-Wen Wang ◽  
Te-Kung Chiang ◽  
Yeong-Her Wang
Keyword(s):  
Strontium Titanate ◽  
Random Access ◽  
Random Access Memory ◽  
Resistive Random Access Memory ◽  
Switching Behavior ◽  
Access Memory
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