Electromechanical Response of Multilayered Polymer Films for High Energy Density Capacitors

2011 ◽  
Vol 1312 ◽  
Author(s):  
Mason A. Wolak ◽  
James S. Shirk ◽  
Matt Mackey ◽  
Joel Carr ◽  
Ann Hiltner ◽  
...  
Keyword(s):  
Focused Ion Beam ◽  
Vinylidene Fluoride ◽  
Layer Structure ◽  
Ion Beam ◽  
Dielectric Materials ◽  
High Energy ◽  
High Energy Density ◽  
Breakdown Field ◽  
Sem Images ◽  
Electromechanical Effects

ABSTRACTMultilayered films comprising alternating layers of polycarbonate (PC) and poly(vinylidene fluoride-hexafluoropropylene) (P[VDF-HFP]) show an enhanced dielectric strength (EB> 750 kV/mm) and an increased energy storage density (Ud ~ 13.5 J/cm3) compared to monolithic PC and P[VDF-HFP] films. Here the role of electromechanical effects in the breakdown of multilayer films is explored both by imaging the changes in the layer structure caused by electrical fields below the breakdown field and by a direct measurement of the strain in multilayer PC/ P[VDF-HFP] films subjected to similar fields. Focused Ion Beam (FIB)/ Scanning Electron Microscopy (SEM) images of the layer structure in films subjected to repeated cycles at near-breakdown fields showed local changes in the thickness of individual layers, suggesting that mechanical forces arising from field-induced compression may play a role in the steps preceding the breakdown. The directly measured field induced strain showed evidence for both an elastic and a flow component to the strain. The mechanical responses of films with ≤ 50 vol% P[VDF-HFP] were modeled as simply the sum of an elastic and viscous flow. The observed electromechanical properties vary with the layer structure. This suggests that multilayering polymers may provide a means to mitigate deleterious electromechanical effects in low modulus, high dielectric materials.

scholarly journals Ultrahigh β-phase content poly(vinylidene fluoride) with relaxor-like ferroelectricity for high energy density capacitors

2019 ◽  
Vol 10 (1) ◽  
Author(s):  
Nan Meng ◽  
Xintong Ren ◽  
Giovanni Santagiuliana ◽  
Leonardo Ventura ◽  
Han Zhang ◽  
...  
Keyword(s):  
Energy Density ◽  
High Efficiency ◽  
Vinylidene Fluoride ◽  
Dielectric Materials ◽  
High Energy ◽  
High Energy Density ◽  
Polar Phase ◽  
Phase Content ◽  
Β Phase ◽  
Poly Vinylidene Fluoride

Abstract Poly(vinylidene fluoride)-based dielectric materials are prospective candidates for high power density electric storage applications because of their ferroelectric nature, high dielectric breakdown strength and superior processability. However, obtaining a polar phase with relaxor-like behavior in poly(vinylidene fluoride), as required for high energy storage density, is a major challenge. To date, this has been achieved using complex and expensive synthesis of copolymers and terpolymers or via irradiation with high-energy electron-beam or γ-ray radiations. Herein, a facile process of pressing-and-folding is proposed to produce β-poly(vinylidene fluoride) (β-phase content: ~98%) with relaxor-like behavior observed in poly(vinylidene fluoride) with high molecular weight > 534 kg mol−1, without the need of any hazardous gases, solvents, electrical or chemical treatments. An ultra-high energy density (35 J cm−3) with a high efficiency (74%) is achieved in a pressed-and-folded poly(vinylidene fluoride) (670-700 kg mol−1), which is higher than that of other reported polymer-based dielectric capacitors to the best of our knowledge.

scholarly journals Polymer Nanocomposites with High Energy Density Utilizing Oriented Nanosheets and High-Dielectric-Constant Nanoparticles

Materials ◽  
2021 ◽  
Vol 14 (17) ◽  
pp. 4780
Author(s):  
Yushu Li ◽  
Yao Zhou ◽  
Sang Cheng ◽  
Jun Hu ◽  
Jinliang He ◽  
...  
Keyword(s):  
Dielectric Constant ◽  
Energy Density ◽  
Polymer Nanocomposites ◽  
High Dielectric Constant ◽  
Vinylidene Fluoride ◽  
Dielectric Materials ◽  
High Energy ◽  
High Energy Density ◽  
Capacitive Energy Storage ◽  
High Dielectric

The development of high-energy-density electrostatic capacitors is critical to addressing the growing electricity need. Currently, the widely studied dielectric materials are polymer nanocomposites incorporated with high-dielectric-constant nanoparticles. However, the introduction of high-dielectric-constant nanoparticles can cause local electric field distortion and high leakage current, which limits the improvement in energy density. In this work, on the basis of conventional polymer nanocomposites containing high-dielectric-constant nanoparticles, oriented boron nitride nanosheets (BNNSs) are introduced as an extra filler phase. By changing the volume ratios of barium titanate (BT) and BNNSs, the dielectric property of polymer nanocomposites is adjusted, and thus the capacitive energy storage performance is optimized. Experimental results prove that the oriented BNNSs can suppress the propagation of charge carriers and decrease the conduction loss. Using poly(vinylidene fluoride-co-hexafluoropropylene) (P(VDF-HFP)) as the polymer matrix, the P(VDF-HFP)/BNNS/BT nanocomposite has a higher discharged energy density compared with the conventional nanocomposite with the freely dispersed BT nanoparticles.

Image Segmentation for FIB-SEM Serial Sectioning of a Si/C–Graphite Composite Anode Microstructure Based on Preprocessing and Global Thresholding

2019 ◽  
Vol 25 (05) ◽  
pp. 1139-1154
Author(s):  
Dongjae Kim ◽  
Sihyung Lee ◽  
Wooram Hong ◽  
Hyosug Lee ◽  
Seongho Jeon ◽  
...  
Keyword(s):  
High Performance ◽  
Focused Ion Beam ◽  
Low Cost ◽  
Ion Beam ◽  
Lithium Ion ◽  
High Energy ◽  
Sem Images ◽  
Graphite Composite ◽  
Thresholding Method ◽  
Global Thresholding

AbstractThe choice of materials that constitute electrodes and the way they are interconnected, i.e., the microstructure, influences the performance of lithium-ion batteries. For batteries with high energy and power densities, the microstructure of the electrodes must be controlled during their manufacturing process. Moreover, understanding the microstructure helps in designing a high-performance, yet low-cost battery. In this study, we propose a systematic algorithm workflow for the images of the microstructure of anodes obtained from a focused ion beam scanning electron microscope (FIB-SEM). Here, we discuss the typical issues that arise in the raw FIB-SEM images and the corresponding preprocessing methods that resolve them. Next, we propose a Fourier transform-based filter that effectively reduces curtain artifacts. Also, we propose a simple, yet an effective, global-thresholding method to identify active materials and pores in the microstructure. Finally, we reconstruct the three-dimensional structures by concatenating the segmented images. The whole algorithm workflow used in this study is not fully automated and requires user interactions such as choosing the values of parameters and removing shine-through artifacts manually. However, it should be emphasized that the proposed global-thresholding method is deterministic and stable, which results in high segmentation performance for all sectioning images.

Effect of Macroscopic Crystallization Modification on the Energy Storage Performance of Poly(Vinylidene Fluoride-Hexafluoropropylene)

NANO ◽  
2021 ◽  
pp. 2150125
Author(s):  
Weiye Sun ◽  
Fujia Chen ◽  
Yujiu Zhou ◽  
Yuetao Zhao ◽  
Jianhua xu ◽  
...  
Keyword(s):  
Energy Storage ◽  
Polyvinylidene Fluoride ◽  
Sandwich Structure ◽  
Vinylidene Fluoride ◽  
Single Layer ◽  
Dielectric Materials ◽  
High Energy ◽  
High Energy Density ◽  
Layer By Layer ◽  
Storage Performance

The application prospects of dielectric materials such as polyvinylidene fluoride polymers in the field of energy storage have stimulated extensive research, and the performances are mainly affected by crystallization. However, most of them are focused on the influences of single-layer crystalline rather than macroscopic structures. In this study, a unique sandwich structure is proposed by combining layer-by-layer casting and multi-step thermal processing methods to control the macroscopic crystallization in each layer. Four heating temperatures were first set, and it was found that as the drying temperature increases, the films present different crystallization, which results in different dielectric performances. According to this feature, a sandwich structure was proposed for modification of macroscopic crystallization and the influences on energy storage performance were studied. After macroscopic modification of the crystallization, a low loss [Formula: see text], high energy density (7.12[Formula: see text]J/cc) with the highest charge-discharging efficiency was obtained, which presents the advantages of this methods, and the related mechanisms were discussed.

Analysis of Voltage Contrast in Secondary Electron Images Using a High-Energy Electron Spectrometer

2019 ◽  
Author(s):  
Natsuko Asano ◽  
Shunsuke Asahina ◽  
Natasha Erdman
Keyword(s):  
Focused Ion Beam ◽  
Ion Beam ◽  
Sample Surface ◽  
High Energy ◽  
Secondary Electrons ◽  
Analysis Technique ◽  
Quantitative Understanding ◽  
Voltage Contrast ◽  
Acceleration Voltage ◽  
Failure Localization

Abstract Voltage contrast (VC) observation using a scanning electron microscope (SEM) or a focused ion beam (FIB) is a common failure analysis technique for semiconductor devices.[1] The VC information allows understanding of failure localization issues. In general, VC images are acquired using secondary electrons (SEs) from a sample surface at an acceleration voltage of 0.8–2.0 kV in SEM. In this study, we aimed to find an optimized electron energy range for VC acquisition using Auger electron spectroscopy (AES) for quantitative understanding.

Ion Beam Imaging Methodology of Invisible Metal under Insulator Using High Energy Electron Beam Charging

2007 ◽  
Author(s):  
C.H. Wang ◽  
S.P. Chang ◽  
C.F. Chang ◽  
J.Y. Chiou
Keyword(s):  
Metal Ion ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Electrical Measurement ◽  
High Energy ◽  
Advanced Technology ◽  
High Energy Electron ◽  
Common Assumption ◽  
Dual Beam ◽  
Imaging Methodology

Abstract Focused ion beam (FIB) is a popular tool for physical failure analysis (FA), especially for circuit repair. FIB is especially useful on advanced technology where the FIB is used to modify the circuit for new layout verification or electrical measurement. The samples are prepared till inter-metal dielectric (IMD), then a hole is dug or a metal is deposited or oxide is deposited by FIB. A common assumption is made that metal under oxide can not be seen by FIB. But a metal ion image is desired for further action. Dual beam, FIB and Scanning Electron Microscope (SEM), tools have a special advantage. When switching back and forth from SEM to FIB the observation has been made that the metal lines can be imaged. The details of this technique will be discussed below.

Enhanced dielectric properties and thermostability in polyimide composites with core-shell structured polyimide@BaTiO3 nanoparticles

2021 ◽  
pp. 095400832199352
Author(s):  
Wei Deng ◽  
Guanguan Ren ◽  
Wenqi Wang ◽  
Weiwei Cui ◽  
Wenjun Luo
Keyword(s):  
Dielectric Constant ◽  
Dielectric Loss ◽  
Energy Density ◽  
Breakdown Strength ◽  
In Situ Polymerization ◽  
Dielectric Materials ◽  
High Energy ◽  
Amic Acid ◽  
High Energy Density ◽  
Core Shell

Polymer composites with high dielectric constant and thermal stability have shown great potential applications in the fields relating to the energy storage. Herein, core-shell structured polyimide@BaTiO3 (PI@BT) nanoparticles were fabricated via in-situ polymerization of poly(amic acid) (PAA) and the following thermal imidization, then utilized as fillers to prepare PI composites. Increased dielectric constant with suppressed dielectric loss, and enhanced energy density as well as heat resistance were simultaneously realized due to the presence of PI shell between BT nanoparticles and PI matrix. The dielectric constant of PI@BT/PI composites with 55 wt% fillers increased to 15.0 at 100 Hz, while the dielectric loss kept at low value of 0.0034, companied by a high energy density of 1.32 J·cm−3, which was 2.09 times higher than the pristine PI. Moreover, the temperature at 10 wt% weight loss reached 619°C, demonstrating the excellent thermostability of PI@BT/PI composites. In addition, PI@BT/PI composites exhibited improved breakdown strength and toughness as compared with the BT/PI composites due to the well dispersion of PI@BT nanofillers and the improved interfacial interactions between nanofillers and polymer matrix. These results provide useful information for the structural design of high-temperature dielectric materials.

High Energy Focused Ion Beam Nanoprobes: Design and Applications

2005 ◽  
Vol 908 ◽  
Author(s):  
Gary A. Glass ◽  
Bibhudutta Rout ◽  
Alexander D. Dymnikov ◽  
Elia V. Eschenazi ◽  
Richard Greco ◽  
...  
Keyword(s):  
Focused Ion Beam ◽  
Complete System ◽  
Ion Beam ◽  
Heavy Ion ◽  
High Energy ◽  
System Technology ◽  
Independent Research ◽  
Coordinated Development ◽  
Component Systems ◽  
Research Facilities

AbstractAn overview of the present state of high energy focused ion beam (HEFIB) system technology, nanoprobe system design and specific ion beam writing applications will be presented. In particular, the combination of P-beam, heavy-ion writing and ion implantation to produce microstructures in resists and silicon will be demonstrated.Heretofore, the development of HEFIB technology worldwide has progressed through a series of developments at independent research facilities, each having relatively narrow and mostly isolated, research purposes. However, a complete, versatile HEFIB nanoprobe system capable of both analysis and modification will require the combination of several component systems, each with specialized technology, and significant advances in the design of a complete system can only be expected from an effort that includes a coordinated development of the component parts.

scholarly journals In Situ Delineation Etch Reveals Subtle Detail in SEM Images of Ion Milled Cross Sections Enabling In-Fab 3-D Metrology and Characterization

2000 ◽  
Vol 8 (2) ◽  
pp. 36-39
Author(s):  
Clive Chandler
Keyword(s):  
Sample Preparation ◽  
Cross Sections ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Automated System ◽  
Sem Images ◽  
Difficult Time ◽  
Device Structures ◽  
Wet Etch ◽  
Conventional Sample

Control of layer thickness is critically important in the manufacture of semiconductor devices. Cross-sectioning exposes device structures for direct examination but conventional sample preparation procedures are difficult, time consuming, and grossly destructive. Cross sections created by focused ion beam (FIB) milling are easier, faster, and less destructive but have not offered the clear layer delineation provided by etching in the conventional sample preparation process. A new gas etch capability (Delineation Etch™ from FEI Company) offers results that are equivalent to conventional wet-etch preparations in a fraction of the time from a single, automated system in the fab without destroying the wafer. The new etch process also has application in milling high-aspect-ratio holes to create contacts to buried metal layers, and in deprocessing devices to reveal silicon and polysilicon structures.

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