Microstructure of sputter-deposited noble metal-incorporated oxide thin films patterned by means of laser interference

2011 ◽  
Vol 1339 ◽  
Author(s):  
Rodolphe Catrin ◽  
Thomas Gries ◽  
David Horwat ◽  
Sylvie Migot ◽  
Frank Muecklich
Keyword(s):  
Laser Treatment ◽  
Noble Metal ◽  
Film Surface ◽  
Solid Lubrication ◽  
Oxide Thin Film ◽  
Laser Interference ◽  
Stabilized Zirconia ◽  
Transmission Electron ◽  
Sputter Deposited ◽  
Fast Procedure

ABSTRACTLaser interference patterning-induced microstructural modifications have been investigated in two noble metal-incorporated oxide thin film systems: Pd0.25Pt0.75Ox and gold-incorporated yttria-stabilized zirconia - Au-YSZ. Transmission electron microscopy was used to investigate the influence of the laser treatment on the microstructure of the samples. In the case of Pd0.25Pt0.75Ox, the formation of a nanocomposite arrangement resulted from the precipitation of metal nanograins in the oxide matrix triggered by laser irradiation. In Au-YSZ, the starting microstructure consisted of gold nanograins embedded in a YSZ matrix. A noticeable growth and coalescence of gold nanograins occurred near the surface in the region of maximum interference. Simultaneously, a foamy morphology, mostly consisting of gold crystals, was formed at the film surface. In contrast to thermal annealing, the laser treatment proposed here is a fast procedure to partially relocate gold at the film surface and provide a local solid lubrication.

Microstructure and Phase Composition of Sputter-Deposited Zirconia-Yttria Films

1983 ◽  
Vol 30 ◽  
Author(s):  
R.W. Knoll ◽  
E.R. Bradley
Keyword(s):  
Phase Composition ◽  
Single Phase ◽  
Composition Range ◽  
X Ray Diffraction ◽  
Stabilized Zirconia ◽  
Partially Stabilized Zirconia ◽  
Transmission Electron ◽  
Heat Treated ◽  
High Bias ◽  
Sputter Deposited

ABSTRACTThin ZrO2 -Y2 O3 coatings ranging in composition from 3 to 15 mole % Y2 O3 were produced by rf sputter deposition. This composition range spanned the region on the equilibrium ZrO2 -Y2O3 phase diagram corresponding to partially stabilized zirconia (a mixture of tetragonal ZrO2 and cubic solid solution). Microstructural characteristics and crystalline phase composition of as-deposited and heat treated films (1100°C and 1500°C) were determined by transmission electron microscopy (TEM) and by x-ray diffraction (XRD). Effects of substrate bias (0 ∼ 250 volts), which induced ion bombardment of the film during growth, were also studied. The as-deposited ZrO2-Y2O3 films were single phase over the composition range studied, and XRD data indicated considerable local atomic disorder in the lattice. Films produced at low bias contained intergranular voids, pronounced columnar growth, and porosity between columns. At high bias, the microstructure was denser, and films contained high compressive stress. After heat treatment, all deposits remained single phase, therefore a microstructure and precipitate distribution characteristic of toughened, partially stabilized zirconia appears to be difficult to achieve in vapor deposited zirconia coatings.

Transmission electron microscopy study of the structure of radio frequency sputter-deposited yttria-stabilized zirconia thin films

2003 ◽  
Vol 18 (1) ◽  
pp. 195-200 ◽  
Author(s):  
David E. Ruddell ◽  
Brian R. Stoner ◽  
Jeffrey Y. Thompson
Keyword(s):  
Electron Microscopy ◽  
Thin Films ◽  
Transmission Electron Microscopy ◽  
Yttria Stabilized Zirconia ◽  
Stabilized Zirconia ◽  
Cross Sectional ◽  
Plan View ◽  
Oxygen Levels ◽  
Transmission Electron ◽  
Sputter Deposited

Transmission electron microscopy (TEM) was used to investigate the structural properties of sputter-deposited yttria-stabilized zirconia (YSZ) thin films. YSZ films were deposited over a range of temperatures and background oxygen levels. Additionally, a multilayered structure was produced by cyclic application of a substrate bias. Plan-view TEM showed that temperature and oxygen levels did not have a significant effect on grain size but did alter the phases present in the thin films. Cross-sectional TEM showed the development of texture in the multilayer film, both within the individual layers and in the entire film.

Reactively sputtered WOxNy films

2000 ◽  
Vol 15 (11) ◽  
pp. 2437-2445 ◽  
Author(s):  
Y. G. Shen ◽  
Y. W. Mai
Keyword(s):  
Photoelectron Spectroscopy ◽  
Film Surface ◽  
Lattice Parameter ◽  
Grain Structure ◽  
Ex Situ ◽  
Cross Sectional ◽  
Plan View ◽  
X Ray ◽  
Transmission Electron ◽  
Sputter Deposited

A combined investigation of stress relaxation in WOxNy thin films sputter deposited on silicon wafers in an Ar–N2–O2 gas mixture by in situ substrate curvature measurements and of structural properties by ex situ x-ray diffraction, x-ray photoelectron spectroscopy, transmission electron microscopy (TEM), electron energy loss spectroscopy, and transmission electron diffraction is reported. It was found that the W2N films deposited under oxygen-free conditions had a high compressive stress of 1.45 GPa. As the oxygen concentration was increased, the stress became smaller and reached almost zero for films near 10–15 at.% oxygen. These results can be understood in terms of the decrease in the lattice parameter caused by substituting nitrogen atoms with oxygen in the lattice sites and the development of an amorphous network in the WOxNy films as the incorporation of oxygen was increased. Plan view and cross-sectional TEM analyses showed that 150-nm-thick oxygen-free crystalline W2N films had a columnar microstructure with an average column width of 15–20 nm near the film surface, whereas oxygen imbedded in the films provided a finer grain structure. The effect of oxygen in stabilizing the W2N structure was also elucidated and explained on the basis of structural and thermodynamic stability.

Microstructure of laser-irradiated, conducting Kapton polyimide

1995 ◽  
Vol 53 ◽  
pp. 502-503
Author(s):  
D. L. Callahan ◽  
Z. Ball ◽  
H. M. Phillips ◽  
R. Sauerbrey
Keyword(s):  
Electron Microscopy ◽  
Phase Transition ◽  
Transmission Electron Microscopy ◽  
Cross Section ◽  
Film Surface ◽  
Cross Sectional ◽  
General Utility ◽  
Transmission Electron ◽  
Considerable Debate ◽  
Potential Applications

Ultraviolet laser-irradiation can be used to induce an insulator-to-conductor phase transition on the surface of Kapton polyimide. Such structures have potential applications as resistors or conductors for VLSI applications as well as general utility electrodes. Although the percolative nature of the phase transformation has been well-established, there has been little definitive work on the mechanism or extent of transformation. In particular, there has been considerable debate about whether or not the transition is primarily photothermal in nature, as we propose, or photochemical. In this study, cross-sectional optical microscopy and transmission electron microscopy are utilized to characterize the nature of microstructural changes associated with the laser-induced pyrolysis of polyimide.Laser-modified polyimide samples initially 12 μm thick were prepared in cross-section by standard ultramicrotomy. Resulting contraction in parallel to the film surface has led to distortions in apparent magnification. The scale bars shown are calibrated for the direction normal to the film surface only.

Characterization of reactive phase formation in sputter-deposited Ni/Al multilayer thin films using TEM

1996 ◽  
Vol 54 ◽  
pp. 1000-1001
Author(s):  
G. Lucadamo ◽  
K. Barmak ◽  
C. Michaelsen
Keyword(s):  
Thin Films ◽  
Phase Formation ◽  
Dark Field ◽  
Nickel Layer ◽  
Multilayer Thin Films ◽  
Cross Sectional ◽  
Dark Field Imaging ◽  
Transmission Electron ◽  
Sputter Deposited ◽  
Constant Heating

The subject of reactive phase formation in multilayer thin films of varying periodicity has stimulated much research over the past few years. Recent studies have sought to understand the reactions that occur during the annealing of Ni/Al multilayers. Dark field imaging from transmission electron microscopy (TEM) studies in conjunction with in situ x-ray diffraction measurements, and calorimetry experiments (isothermal and constant heating rate), have yielded new insights into the sequence of phases that occur during annealing and the evolution of their microstructure.In this paper we report on reactive phase formation in sputter-deposited lNi:3Al multilayer thin films with a periodicity A (the combined thickness of an aluminum and nickel layer) from 2.5 to 320 nm. A cross-sectional TEM micrograph of an as-deposited film with a periodicity of 10 nm is shown in figure 1. This image shows diffraction contrast from the Ni grains and occasionally from the Al grains in their respective layers.

Effect of thermal annealing on grain boundary chemistry of polycrystalline TiBa2Ca2Cu3Oy films

1994 ◽  
Vol 52 ◽  
pp. 968-969
Author(s):  
Z. L. Wang ◽  
C. L. Briant ◽  
J. DeLuca ◽  
A. Goyal ◽  
D. M. Kroeger ◽  
...  
Keyword(s):  
Grain Boundary ◽  
Weak Link ◽  
Zero Field ◽  
Stabilized Zirconia ◽  
Local Texture ◽  
Transmission Electron ◽  
Axis Alignment ◽  
Boundary Chemistry ◽  
Small Misorientation ◽  
Misorientation Angles

Recent studies have shown that spray-pyrolyzed films of the Tl-1223 compound (TlxBa2Ca2Cu3Oy, with 0.7 < × < 0.95) on polycrystalline yttrium stabilized zirconia substrates can be prepared which have critical current density Jc near 105 A/cm2 at 77 K, in zero field. The films are polycrystalline, have excellent c-axis alignment, and show little evidence of weak-link behavior. Transmission electron microscopy (TEM) studies have shown that most grain boundaries have small misorientation angles. It has been found that the films have a nigh degree of local texture indicative of colonies of similarly oriented grains. It is believed that inter-colony conduction is enhanced by a percolative network of small angle boundaries at colony interfaces. It has also been found that Jc is increased by a factor of 4 - 5 after the films were annealed at 600 °C in oxygen. This study is thus carried out to determine the effect on grain boundary chemistry of the heat treatment.

scholarly journals Surface Stoichiometry and Depth Profile of Tix-CuyNz Thin Films Deposited by Magnetron Sputtering

Materials ◽  
2021 ◽  
Vol 14 (12) ◽  
pp. 3191
Author(s):  
Arun Kumar Mukhopadhyay ◽  
Avishek Roy ◽  
Gourab Bhattacharjee ◽  
Sadhan Chandra Das ◽  
Abhijit Majumdar ◽  
...  
Keyword(s):  
Magnetron Sputtering ◽  
Photoelectron Spectroscopy ◽  
Film Surface ◽  
Grazing Incidence ◽  
X Ray Diffraction ◽  
X Ray ◽  
Relative Composition ◽  
Transmission Electron ◽  
Deposited Film ◽  
Deposited Films

We report the surface stoichiometry of Tix-CuyNz thin film as a function of film depth. Films are deposited by high power impulse (HiPIMS) and DC magnetron sputtering (DCMS). The composition of Ti, Cu, and N in the deposited film is investigated by X-ray photoelectron spectroscopy (XPS). At a larger depth, the relative composition of Cu and Ti in the film is increased compared to the surface. The amount of adventitious carbon which is present on the film surface strongly decreases with film depth. Deposited films also contain a significant amount of oxygen whose origin is not fully clear. Grazing incidence X-ray diffraction (GIXD) shows a Cu3N phase on the surface, while transmission electron microscopy (TEM) indicates a polycrystalline structure and the presence of a Ti3CuN phase.

Influence of Modulation Wavelength Induced Order on the Physical Properties of Nb/Rare Earth Superlattices

1984 ◽  
Vol 37 ◽  
Author(s):  
L. H. Greene ◽  
W. L. Feldmann ◽  
J. M. Rowell ◽  
B. Batlogg ◽  
R. Hull ◽  
...  
Keyword(s):  
Rare Earth ◽  
Room Temperature ◽  
Room Temperature Resistivity ◽  
Residual Resistance ◽  
Sapphire Substrates ◽  
Transmission Electron ◽  
Sputter Deposited ◽  
Residual Resistance Ratio ◽  
Temperature Resistivity ◽  
Modulation Wavelength

AbstractWe report the observation of a higher degree of preferred crystalline orientation in Nb/rare earth superlattices for modulation wavelengths in the range of 200 Å to 500 Å than that exhibited by single component films. All films and multilayers are sputter deposited onto room temperature sapphire substrates. Electronic transport measurements also show that the residual resistance ratio is higher and the room temperature resistivity is lower than for multilayers of either greater or lower periodicities. Transmission electron micrographs (TEM) showing excellent layering, grain size comparable to the layer thickness, and evidence of some degree of epitaxy are presented.

Crystallization of Amorphous Silicon-Aluminum thin Films: IN-SITU Observation and Thermal Analysis.

1991 ◽  
Vol 237 ◽  
Author(s):  
Toyohiko J. Konno ◽  
Robert Sinclair
Keyword(s):  
Activation Energy ◽  
Amorphous Alloys ◽  
Amorphous Matrix ◽  
In Situ Observation ◽  
Scanning Calorimetry ◽  
Transmission Electron ◽  
High Resolution Tem ◽  
Higher Temperature ◽  
Sputter Deposited

ABSTRACTThe crystallization of sputter-deposited Si/Al amorphous alloys was examined by transmission electron microscopy (TEM) and differential scanning calorimetry (DSC). In-situ high-resolution TEM reveals the existence of an Al layer between the amorphous matrix and the growing crystalline phase. The activation energy for the growth is about 1.2eV, roughly corresponding to the activation energy of Si diffusion in Al. These two observations support the view that a crystallization mechanism, in which an Al buffer layer provides the shortest reaction path, is responsible for the reaction. The product microstructure exhibits secondary crystallization at a higher temperature.

Sign in / Sign up

Export Citation Format

Share Document