Memristive Switches with Two Switching Polarities in a Forming Free Device Structure

2011 ◽  
Vol 1337 ◽  
Author(s):  
Rainer Bruchhaus ◽  
Christoph R. Hermes ◽  
Rainer Waser
Keyword(s):  
Thin Films ◽  
Simple Explanation ◽  
Device Structure ◽  
Pt Electrode ◽  
Cmos Compatible

ABSTRACTIn this study an electroforming free device structure based on 25nm thin TiO2 thin films is presented. The TiO2 films are deposited on CMOS compatible W plugs. The use of 5nm thick interlayers of Ti and W between the TiO2 and the Pt electrode turn out to be the key step to achieve the forming free performance. In these Pt/Ti/TiO2/W or Pt/W/TiO2/W samples the switching polarity can be repeatedly changed from “eightwise” to “counter-eightwise” in one device by a proper adjustment of the I-V measurement conditions. The most simple explanation for this observation is that the switching interface can be flipped back and forth from the bottom to the top electrode.

CMOS-Compatible Synthesis of Large-Area, High-Mobility Graphene by Chemical Vapor Deposition of Acetylene on Cobalt Thin Films

ACS Nano ◽  
2011 ◽  
Vol 5 (9) ◽  
pp. 7198-7204 ◽  
Author(s):  
Michael E. Ramón ◽  
Aparna Gupta ◽  
Chris Corbet ◽  
Domingo A. Ferrer ◽  
Hema C. P. Movva ◽  
...  
Keyword(s):  
Thin Films ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
High Mobility ◽  
Chemical Vapor ◽  
Large Area ◽  
Cobalt Thin Films ◽  
Cmos Compatible

High-κ Insulator Thin Films and Retention Properties of MFIS Diodes

2011 ◽  
Vol 1345 ◽  
Author(s):  
Yichun Zhou
Keyword(s):  
Thin Films ◽  
Leakage Current ◽  
High Speed ◽  
Random Access ◽  
Ferroelectric Thin Film ◽  
Buffer Layers ◽  
Interface Properties ◽  
Si Substrate ◽  
Device Structure ◽  
Low Leakage

ABSTRACTFerroelectric field effect transistor (FFET) is a promising candidate for non-volatile random access memory because of its high speed, single device structure, low power consumption, and nondestructive read-out operation. Currently, however, such ideal devices are commercially not available due to poor interface properties between ferroelectric film and Si substrate, such as leakage current and interdiffusion etc. So we choose YSZ and HfO2 insulating thin films as buffer layer due to they possess relatively high dielectric constant, high thermal stability, low leakage current, and good interface property with Si substrates. Two structural diodes of Pt/BNT/YSZ/Si and Pt/SBT/HfO2/Si were fabricated, and the microstructures, interface properties, C-V, I-V, and retention properties were investigated in detail. Experimental results show that the fabricated diodes exhibit excellent long-term retention properties, which is due to the good interface and the low leakage density, demonstrating that the YSZ and HfO2 buffer layers are playing a critical modulation role between the ferroelectric thin film and Si substrate.

Doping Effects in CMOS-compatible CoSi Thin Films for Thermoelectric and Sensor Applications

2020 ◽  
Vol 646 (14) ◽  
pp. 1231-1237
Author(s):  
Charan Krishna Nichenametla ◽  
Jesus Calvo ◽  
Stefan Riedel ◽  
Lukas Gerlich ◽  
Meike Hindenberg ◽  
...  
Keyword(s):  
Thin Films ◽  
Sensor Applications ◽  
Doping Effects ◽  
Cmos Compatible

Preparation of BST thin films on Pt electrode on Si wafer with down-flow LSMCVD reactor

1996 ◽  
Vol 12 (2-4) ◽  
pp. 185-197 ◽  
Author(s):  
Hyun Jin Chung ◽  
Jin Hong Kim ◽  
Won Seok Moon ◽  
Seung Bin Park ◽  
Cheol Seong Hwang ◽  
...  
Keyword(s):  
Thin Films ◽  
Pt Electrode ◽  
Bst Thin Films ◽  
Si Wafer

Unipolar resistive switching behavior of high-k ternary rare-earth oxide LaHoO3 thin films for non-volatile memory applications

2015 ◽  
Vol 1729 ◽  
pp. 23-28 ◽  
Author(s):  
Yogesh Sharma ◽  
Pankaj Misra ◽  
Shojan P. Pavunny ◽  
Ram S. Katiyar
Keyword(s):  
Thin Films ◽  
Rare Earth ◽  
Resistive Switching ◽  
High Resistance ◽  
Rare Earth Oxide ◽  
Switching Behavior ◽  
Resistive Switching Behavior ◽  
Device Structure ◽  
Resistance State ◽  
Unipolar Resistive Switching

ABSTRACTRare-earth oxides have attracted considerable research interest in resistive random access memories (ReRAMs) due to their compatibility with complementary metal-oxide semiconductor (CMOS) process. To this end we report unipolar resistive switching in a novel ternary rare-earth oxide LaHoO3 (LHO) to accelerate progress and to support advances in this emerging densely scalable research architecture. Amorphous thin films of LHO were fabricated on Pt/TiO2/SiO2/Si substrate by pulsed laser deposition, followed by sputter deposition of platinum top electrode through shadow mask in order to elucidate the resistive switching behavior of the resulting Pt/LHO/Pt metal-insulator-metal (MIM) device structure. Stable unipolar resistive switching characteristics with interesting switching parameters like, high resistance ratio of about 105 between high resistance state (HRS) and low resistance state (LRS), non-overlapping switching voltages with narrow dispersion, and excellent retention and endurance features were observed in Pt/LHO/Pt device structure. The observed resistive switching in LHO was explained by the formation/rupture of conductive filaments formed out of oxygen vacancies and metallic Ho atom. From the current-voltage characteristics of Pt/LHO/Pt structure, the conduction mechanism in LRS and HRS was found to be dominated by Ohm’s law and Poole-Frenkel emission, respectively.

Electroluminescence Devices with CdS and CdS:Mn Nanoparticles and Polymer Blends

1999 ◽  
Vol 581 ◽  
Author(s):  
Ch. Brugger ◽  
S. Tasch ◽  
M. Lal ◽  
P.N. Prasad ◽  
G. Leising
Keyword(s):  
Thin Films ◽  
Polymer Blends ◽  
Photophysical Properties ◽  
Single Layer ◽  
Emission Spectra ◽  
Cds Nanoparticles ◽  
Device Structure ◽  
And Performance ◽  
Organic Capping ◽  
Cds:Mn Nanoparticles

ABSTRACTWe have investigated the photophysical properties of surface capped CdS and CdS:Mn nanoparticles in the form of spin coated thin films of the pure nanoparticles and nanoparticle -polymer blends. The organic capping reagent was p-thiocresol. Electroluminescence (EL) devices were fabricated and characterized by their current/voltage characteristics and EL emission performance. This is to our knowledge the first report on Mn doped CdS nanoparticles applied in EL devices with a single layer device structure (ITO/CdS:Mn/Al). Photoluminescence (PL) and PL excitation measurements were performed on CdS:Mn nanoparticles in pyridine dispersion and on thin films. The PL excitation spectrum shows a narrow peak at 390nm. Excitation at this wavelength yields a broad PL spectrum spanning from about 450 to 700nm, which is dominated by a strong emission band at 585nm. This emission is attributed to transitions involving Mn levels in previous works. The EL emission peak is shifted to the red compared to the PL emission spectra. The characteristics and performance of these new types of EL devices will be presented and discussed.

scholarly journals Correlation between electrical direct current resistivity and plasmonic properties of CMOS compatible titanium nitride thin films

2018 ◽  
Vol 26 (8) ◽  
pp. 9813 ◽  
Author(s):  
S. Viarbitskaya ◽  
J. Arocas ◽  
O. Heintz ◽  
G. Colas-Des-Francs ◽  
D. Rusakov ◽  
...  
Keyword(s):  
Thin Films ◽  
Titanium Nitride ◽  
Direct Current ◽  
Cmos Compatible

Nanostructured Zn-Substituted Nickel Ferrite Thin Films: CMOS-Compatible Deposition and Excellent Soft Magnetic Properties

2019 ◽  
Vol 10 ◽  
pp. 1-5
Author(s):  
RD Ralandinliu Kahmei ◽  
Ranajit Sai ◽  
Sarath Arackal ◽  
S. A. Shivashankar ◽  
Navakanta Bhat
Keyword(s):  
Thin Films ◽  
Magnetic Properties ◽  
Nickel Ferrite ◽  
Soft Magnetic Properties ◽  
Soft Magnetic ◽  
Cmos Compatible ◽  
Ferrite Thin Films
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