Enhanced Light Emission at Self-assembled GaN Inversion Domain Boundary

2011 ◽  
Vol 1324 ◽  
Author(s):  
Mei-Chun Liu ◽  
Yuh-Jen Cheng ◽  
Jet-Rung Chang ◽  
Chun-Yen Chang
Keyword(s):  
Molecular Beam ◽  
Light Emission ◽  
Domain Boundary ◽  
Mbe Growth ◽  
Polarity Inversion ◽  
Circular Pattern ◽  
Inversion Domain ◽  
Domain Boundaries ◽  
Self Assembled ◽  
Inversion Domain Boundaries

ABSTRACTWe report the fabrication of GaN lateral polarity inversion heterostructure with self assembled crystalline inversion domain boundaries (IDBs). The sample was fabricated by two step molecular-beam epitaxy (MBE) with microlithography patterning in between to define IDBs. Despite the use of circular pattern, hexagonal crystalline IDBs were self assembled from the circular pattern during the second MBE growth. Both cathodoluminescent (CL) and photoluminescent (PL) measurements show a significant enhanced emission at IDBs and in particular at hexagonal corners. The ability to fabricate self assembled crystalline IDBs and its enhanced emission property can be useful in optoelectronic applications.

Microstructral Investigations on GaN Films Grown by Laser Induced Molecular Beam Epitaxy

1999 ◽  
Vol 595 ◽  
Author(s):  
H. Zhou ◽  
F. Phillipp ◽  
M. Gross ◽  
H. Schröder
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Threading Dislocations ◽  
Planar Defects ◽  
Sapphire Substrates ◽  
Inversion Domain ◽  
Transmission Electron ◽  
Domain Boundaries ◽  
Line Defects ◽  
Inversion Domain Boundaries

AbstractMicrostructural investigations on GaN films grown on SiC and sapphire substrates by laser induced molecular beam epitaxy have been performed. Threading dislocations with Burgers vectors of 1/3<1120>, 1/3<1123> and [0001] are typical line defects, predominantly the first type of dislocations. Their densities are typically 1.5×1010 cm−2 and 4×109 cm−2 on SiC and sapphire, respectively. Additionally, planar defects characterized as inversion domain boundaries lying on {1100} planes have been observed in GaN/sapphire samples with an inversion domain density of 4×109 cm−2. The inversion domains are of Ga-polarity with respect to the N-polarity of the adjacent matrix. However, GaN layers grown on SiC show Ga-polarity. Possible reasons for the different morphologies and structures of the films grown on different substrates are discussed. Based on an analysis of displacement fringes of inversion domains, an atomic model of the IDB-II with Ga-N bonds across the boundary was deduced. High resolution transmission electron microscopy (HRTEM) observations and the corresponding simulations confirmed the IDB-II structure determined by the analysis of displacement fringes.

Optical properties of self assembled GaN polarity inversion domain boundary

2011 ◽  
Vol 99 (2) ◽  
pp. 021103 ◽  
Author(s):  
M.-C. Liu ◽  
Y.-J. Cheng ◽  
J.-R. Chang ◽  
S.-C. Hsu ◽  
C.-Y. Chang
Keyword(s):  
Optical Properties ◽  
Domain Boundary ◽  
Polarity Inversion ◽  
Inversion Domain ◽  
Self Assembled

Sreels Analysis of Oxygen-Rich Inversion Domain Boundaries in Aluminum Nitride

1994 ◽  
Vol 357 ◽  
Author(s):  
J. Bruley ◽  
A.D. Westwood ◽  
R. A. Youngman ◽  
J.-C. Zhao ◽  
M.R. Notis
Keyword(s):  
Aluminum Nitride ◽  
Structural Model ◽  
Domain Boundary ◽  
Edge Structure ◽  
Spatially Resolved ◽  
Inversion Domain ◽  
Domain Boundaries ◽  
Length Data ◽  
Inversion Domain Boundaries ◽  
Electron Energy Loss

AbstractSpatially resolved electron energy loss spectroscopy analysis has been conducted on planar inversion domain boundaries in aluminum nitride. The defects were found to contain 1.5 monolayers of oxygen, in agreement with the most recent structural model of Westwood. From variations in near-edge structure, the local atomic environments of both oxygen and aluminum are compared with α-A1203, γ-A1203 and γ-AION standards. Based upon this study the stnrcture of the inversion domain boundary is found to resemble that of the cubic γ-AION spinel, and eliminates from consideration those structural models based upon ai-Al203. Furthermore, quantification of the shape resonances provided Al-O bond-length data from the inversion domain boundary interface. These distances closely agree with the Youngman Model that has recently been further refined by Westwood et al.

Inversion Domain Boundary Dislocations in Heteroepitaxial Films

1988 ◽  
Vol 144 ◽  
Author(s):  
T. T. Cheng ◽  
P. Pirouz ◽  
F. Ernst
Keyword(s):  
Electron Microscope ◽  
Domain Boundary ◽  
Relative Displacement ◽  
Boundary Dislocation ◽  
Fringe Contrast ◽  
Burgers Vector ◽  
Inversion Domain ◽  
Transmission Electron ◽  
Domain Boundaries ◽  
Inversion Domain Boundaries

ABSTRACTTransmission electron microscope (TEM) images of inversion domain boundaries (IDB) show fringe contrast, thus indicating a relative displacement between the two adjoining domains. When the IDBs are facetted, different facets may have different displacement fault vectors. This implies that when the facetting changes from one plane to another, there should be a dislocation at the intersection of the planes. This is termed an “inversion domain boundary dislocation” and it will have a Burgers vector b=R1–R2 where R1, and R2 are the fault vectors of the two facets. Experimental results for facetted IDBs and IDB dislocations in SiC grown heteroepitaxially on (001) silicon are presented.

Inversion domain boundary structure of laterally overgrown c-GaN domains including the inversion from Ga to N polarity at a mask pattern boundary

2018 ◽  
Vol 51 (6) ◽  
pp. 1551-1555 ◽  
Author(s):  
Hwa Seob Kim ◽  
Hyunkyu Lee ◽  
Dongsoo Jang ◽  
Donghoi Kim ◽  
Chinkyo Kim
Keyword(s):  
Domain Boundary ◽  
Epitaxial Lateral Overgrowth ◽  
Boundary Structure ◽  
Geometrical Factor ◽  
Mask Pattern ◽  
Polarity Inversion ◽  
Lateral Overgrowth ◽  
Inversion Domain ◽  
Proposed Model ◽  
Inversion Domain Boundaries

During epitaxial lateral overgrowth, the lateral polarity inversion of c-GaN domains from Ga to N polarity, triggered at the boundary of an SiO2 mask pattern, resulted in inversion domain boundaries (IDBs) forming preferentially on the \{11{\overline 2}0\} plane, although the formation energy of IDBs on the \{1{\overline 1}00\} plane is known to be lower than that on the \{11{\overline 2}0\} plane. A model that takes a geometrical factor into consideration can explain this preferential tendency of IDB formation on the \{11{\overline 2}0\} plane, and computational simulations based on the proposed model are consistent with experimental results. In contrast with the vertically upright IDBs observed in N-to-Ga polarity inversion, vertically slanted IDBs were formed in some samples during the inversion from Ga to N polarity. These polarity inversions, which appeared to randomly occur on the mask pattern, turned out to be triggered at the mask pattern boundaries.

scholarly journals Inversion domain boundaries in wurtzite GaN

2021 ◽  
Vol 103 (16) ◽  
Author(s):  
M. M. F. Umar ◽  
Jorge O. Sofo
Keyword(s):  
Inversion Domain ◽  
Domain Boundaries ◽  
Inversion Domain Boundaries

Interaction Between Basal Stacking Faults and Prismatic Inversion Domain Boundaries in GaN

2000 ◽  
Vol 639 ◽  
Author(s):  
Philomela Komninou ◽  
Joseph Kioseoglou ◽  
Eirini Sarigiannidou ◽  
George P. Dimitrakopulos ◽  
Thomas Kehagias ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
High Resolution ◽  
Stacking Faults ◽  
High Resolution Electron Microscopy ◽  
High Energy ◽  
Low Energy ◽  
Inversion Domain ◽  
Resolution Electron ◽  
Domain Boundaries ◽  
Inversion Domain Boundaries

ABSTRACTThe interaction of growth intrinsic stacking faults with inversion domain boundaries in GaN epitaxial layers is studied by high resolution electron microscopy. It is observed that stacking faults may mediate a structural transformation of inversion domain boundaries, from the low energy types, known as IDB boundaries, to the high energy ones, known as Holt-type boundaries. Such interactions may be attributed to the different growth rates of adjacent domains of inverse polarity.

Molecular beam epitaxial growth of InAs self-assembled quantum dots with light-emission at 1.3μm

2000 ◽  
Vol 208 (1-4) ◽  
pp. 93-99 ◽  
Author(s):  
Y Nakata ◽  
K Mukai ◽  
M Sugawara ◽  
K Ohtsubo ◽  
H Ishikawa ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Epitaxial Growth ◽  
Molecular Beam ◽  
Light Emission ◽  
Molecular Beam Epitaxial ◽  
Self Assembled ◽  
Molecular Beam Epitaxial Growth
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