Optical properties of self assembled GaN polarity inversion domain boundary

2011 ◽  
Vol 99 (2) ◽  
pp. 021103 ◽  
Author(s):  
M.-C. Liu ◽  
Y.-J. Cheng ◽  
J.-R. Chang ◽  
S.-C. Hsu ◽  
C.-Y. Chang
Keyword(s):  
Optical Properties ◽  
Domain Boundary ◽  
Polarity Inversion ◽  
Inversion Domain ◽  
Self Assembled

Enhanced Light Emission at Self-assembled GaN Inversion Domain Boundary

2011 ◽  
Vol 1324 ◽  
Author(s):  
Mei-Chun Liu ◽  
Yuh-Jen Cheng ◽  
Jet-Rung Chang ◽  
Chun-Yen Chang
Keyword(s):  
Molecular Beam ◽  
Light Emission ◽  
Domain Boundary ◽  
Mbe Growth ◽  
Polarity Inversion ◽  
Circular Pattern ◽  
Inversion Domain ◽  
Domain Boundaries ◽  
Self Assembled ◽  
Inversion Domain Boundaries

ABSTRACTWe report the fabrication of GaN lateral polarity inversion heterostructure with self assembled crystalline inversion domain boundaries (IDBs). The sample was fabricated by two step molecular-beam epitaxy (MBE) with microlithography patterning in between to define IDBs. Despite the use of circular pattern, hexagonal crystalline IDBs were self assembled from the circular pattern during the second MBE growth. Both cathodoluminescent (CL) and photoluminescent (PL) measurements show a significant enhanced emission at IDBs and in particular at hexagonal corners. The ability to fabricate self assembled crystalline IDBs and its enhanced emission property can be useful in optoelectronic applications.

Spontaneous inversion of in-plane polarity ofa-oriented GaN domains laterally overgrown on patternedr-plane sapphire substrates

2013 ◽  
Vol 46 (2) ◽  
pp. 443-447 ◽  
Author(s):  
Donggyu Shin ◽  
Sanghwa Lee ◽  
Miyeon Jue ◽  
Wooyoung Lee ◽  
Soyoung Oh ◽  
...  
Keyword(s):  
Circular Hole ◽  
Sapphire Substrate ◽  
Domain Boundary ◽  
Crystallographic Analysis ◽  
Polarity Inversion ◽  
Spontaneous Formation ◽  
Sapphire Substrates ◽  
Inverted Orientation ◽  
Inversion Domain ◽  
First Time

Spontaneously regulated in-plane polarity inversion ofa-oriented GaN domains has been demonstrated for the first time. Crystallographic analysis revealed that each domain grown on circular-hole-patternedr-plane sapphire substrates has basal faces with oppositely oriented in-plane polarity. The inverted orientation of in-plane polarity on the opposite basal faces is not due to merging between in-plane polarity-inverted domains nucleated on the patternedr-plane sapphire substrate, but it was found to be due to spontaneous formation of an inversion domain boundary on the growth fronts of existing domains. This result provides new insights into controlling the in-plane polarity ofa-oriented GaN, because the nucleation of in-plane polarity-inverted domains ofa-oriented GaN onr-plane sapphire is symmetrically not allowed.

Inversion domain boundary structure of laterally overgrown c-GaN domains including the inversion from Ga to N polarity at a mask pattern boundary

2018 ◽  
Vol 51 (6) ◽  
pp. 1551-1555 ◽  
Author(s):  
Hwa Seob Kim ◽  
Hyunkyu Lee ◽  
Dongsoo Jang ◽  
Donghoi Kim ◽  
Chinkyo Kim
Keyword(s):  
Domain Boundary ◽  
Epitaxial Lateral Overgrowth ◽  
Boundary Structure ◽  
Geometrical Factor ◽  
Mask Pattern ◽  
Polarity Inversion ◽  
Lateral Overgrowth ◽  
Inversion Domain ◽  
Proposed Model ◽  
Inversion Domain Boundaries

During epitaxial lateral overgrowth, the lateral polarity inversion of c-GaN domains from Ga to N polarity, triggered at the boundary of an SiO2 mask pattern, resulted in inversion domain boundaries (IDBs) forming preferentially on the \{11{\overline 2}0\} plane, although the formation energy of IDBs on the \{1{\overline 1}00\} plane is known to be lower than that on the \{11{\overline 2}0\} plane. A model that takes a geometrical factor into consideration can explain this preferential tendency of IDB formation on the \{11{\overline 2}0\} plane, and computational simulations based on the proposed model are consistent with experimental results. In contrast with the vertically upright IDBs observed in N-to-Ga polarity inversion, vertically slanted IDBs were formed in some samples during the inversion from Ga to N polarity. These polarity inversions, which appeared to randomly occur on the mask pattern, turned out to be triggered at the mask pattern boundaries.

Polarity Control within One Monolayer at ZnO/GaN Heterointerface: (0001) Plane Inversion Domain Boundary

2018 ◽  
Vol 10 (43) ◽  
pp. 37651-37660 ◽  
Author(s):  
Siqian Li ◽  
Huaping Lei ◽  
Yi Wang ◽  
Md Barkat Ullah ◽  
Jun Chen ◽  
...  
Keyword(s):  
Domain Boundary ◽  
Inversion Domain

Structural and optical properties of InAs/In0.52Al0.48As self-assembled quantum wires on InP(001)

2005 ◽  
Vol 284 (3-4) ◽  
pp. 306-312 ◽  
Author(s):  
Yuan-Li Wang ◽  
Yong-Hai Chen ◽  
Ju Wu ◽  
Wen Lei ◽  
Zhan-Guo Wang ◽  
...  
Keyword(s):  
Optical Properties ◽  
Quantum Wires ◽  
Structural And Optical Properties ◽  
Self Assembled

Self-assembled GaN nanostructures by dry etching and their optical properties

2012 ◽  
Vol 209 (3) ◽  
pp. 443-446 ◽  
Author(s):  
Anna Haab ◽  
Martin Mikulics ◽  
Andreas Winden ◽  
Sally Voigt ◽  
Martina von der Ahe ◽  
...  
Keyword(s):  
Optical Properties ◽  
Dry Etching ◽  
Self Assembled

Self-assembled silver nanoparticles for plasmon-enhanced solar cell back reflectors: correlation between structural and optical properties

2013 ◽  
Vol 24 (26) ◽  
pp. 265601 ◽  
Author(s):  
Seweryn Morawiec ◽  
Manuel J Mendes ◽  
Salvatore Mirabella ◽  
Francesca Simone ◽  
Francesco Priolo ◽  
...  
Keyword(s):  
Silver Nanoparticles ◽  
Optical Properties ◽  
Solar Cell ◽  
Structural And Optical Properties ◽  
Back Reflectors ◽  
Self Assembled
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