Impact of a Finite Shunt Resistance on the Dark Spectral Response of a-Si:H/μc-Si Thin-film Multi-junction Photovoltaic Devices

2011 ◽  
Vol 1321 ◽  
Author(s):  
Mauro Pravettoni ◽  
Alessandro Virtuani
Keyword(s):  
Thin Film ◽  
Spectral Response ◽  
Photovoltaic Devices ◽  
Critical Aspect ◽  
Shunt Resistance ◽  
Pv Module ◽  
Current Matching ◽  
Double Junction ◽  
The Impact ◽  
Hydrogenated Amorphous

ABSTRACTHydrogenated amorphous silicon (a-Si:H) multi-junction devices have demonstrated a way to increase the efficiency of a-Si:H thin-film photovoltaic (PV) modules, which is now well above 10%. Since the current–matching behaviour of all sub-cells is a critical aspect, the measurement of the spectral response (SR) of all junctions provides valuable information to optimize the device performance under a given spectral distribution. In this work the authors investigate the impact of low shunt resistances on the SR of a double-junction a-Si:H/μc-Si PV module. The origin of a low shunt resistance in a-Si:H multi-junction devices is revised. A simple theoretical approach is then used to describe the anomalous dark SR observed experimentally as a consequence of the presence of low shunt resistances. The dark SR allows therefore to detect the presence of shunts and discriminate the defective sub-cell.

Spectral response measurement of double-junction thin-film photovoltaic devices: the impact of shunt resistance and bias voltage

2011 ◽  
Vol 22 (4) ◽  
pp. 045902 ◽  
Author(s):  
Mauro Pravettoni ◽  
Roberto Galleano ◽  
Alessandro Virtuani ◽  
Harald Müllejans ◽  
Ewan D Dunlop
Keyword(s):  
Thin Film ◽  
Bias Voltage ◽  
Spectral Response ◽  
Photovoltaic Devices ◽  
Response Measurement ◽  
Shunt Resistance ◽  
Double Junction ◽  
The Impact

scholarly journals Sustainable End of Life Management of Crystalline Silicon and Thin Film Solar Photovoltaic Waste: The Impact of Transportation

2020 ◽  
Vol 10 (16) ◽  
pp. 5465 ◽  
Author(s):  
Ilke Celik ◽  
Marina Lunardi ◽  
Austen Frederickson ◽  
Richard Corkish
Keyword(s):  
Thin Film ◽  
United States ◽  
End Of Life ◽  
Crystalline Silicon ◽  
The United States ◽  
Hotspot Analysis ◽  
Material Recovery ◽  
Pv Module ◽  
Pv Modules ◽  
The Impact

This work provides economic and environmental analyses of transportation-related impacts of different photovoltaic (PV) module technologies at their end-of-life (EoL) phase. Our results show that crystalline silicon (c-Si) modules are the most economical PV technology (United States Dollars (USD) 2.3 per 1 m2 PV module (or 0.87 ¢/W) for transporting in the United States for 1000 km). Furthermore, we found that the financial costs of truck transportation for PV modules for 2000 km are only slightly more than for 1000 km. CO2-eq emissions associated with transport are a significant share of the EoL impacts, and those for copper indium gallium selenide (CIGS) PV modules are always higher than for c-Si and CdTe PV. Transportation associated CO2-eq emissions contribute 47%, 28%, and 40% of overall EoL impacts of c-Si, CdTe, and CIGS PV wastes, respectively. Overall, gasoline-fueled trucks have 65–95% more environmental impacts compared to alternative transportation options of the diesel and electric trains and ships. Finally, a hotspot analysis on the entire life cycle CO2-eq emissions of different PV technologies showed that the EoL phase-related emissions are more significant for thin-film PV modules compared to crystalline silicon PV technologies and, so, more environmentally friendly material recovery methods should be developed for thin film PV.

To Bias or Not to Bias? An “How-To” Guide for Spectral Response Measurements of Thin Film Multi-Junction Photovoltaic Modules

2012 ◽  
Vol 1426 ◽  
pp. 81-86 ◽  
Author(s):  
Mauro Pravettoni
Keyword(s):  
Thin Film ◽  
Performance Prediction ◽  
Spectral Response ◽  
Photovoltaic Device ◽  
Device Performance ◽  
Experimental Practice ◽  
Photovoltaic Modules ◽  
Current Matching

ABSTRACTCurrent-matching between junctions in a multi-junction photovoltaic device is fundamental for its performance prediction: the measurement of the spectral response of each junction provides a valuable information to optimize the device performance. Various aspects make spectral response measurements of such devices particularly challenging. In this work these aspects are analysed theoretically and guidelines to avoid their impact in the experimental practice are given.

Light-Induced Degradation in Solar Cells with Hydrogenated Amorphous Silicon-Sulfur Active Layers

2002 ◽  
Vol 715 ◽  
Author(s):  
Wei Xu ◽  
P. C. Taylor
Keyword(s):  
Solar Cells ◽  
Practical Importance ◽  
Chemical Vapor ◽  
Photovoltaic Devices ◽  
Sulfur Concentration ◽  
Active Layers ◽  
Conversion Efficiencies ◽  
Hydrogenated Amorphous ◽  
Secondary Ion ◽  
Initial Conversion

AbstractWe have made a series of a-SiSx:H based solar cells, with a pin structure, in a multichamber plasma enhanced chemical vapor deposition (PECVD) system. The sulfur concentration ranges from zero to 5 x 1018 cm-3 as measured by secondary ion mass spectroscopy. The initial conversion efficiencies of cells in this series with sulfur concentrations ≤ 1018 cm-3 are approximately 7%. The time constants for degradation increase with increasing sulfur concentration, but not fast enough to be of practical importance in photovoltaic devices.

scholarly journals Titanium Nitride Thin Film Based Low-Redox-Interference Potentiometric pH Sensing Electrodes

Sensors ◽  
2020 ◽  
Vol 21 (1) ◽  
pp. 42
Author(s):  
Shimrith Paul Shylendra ◽  
Wade Lonsdale ◽  
Magdalena Wajrak ◽  
Mohammad Nur-E-Alam ◽  
Kamal Alameh
Keyword(s):  
Thin Film ◽  
Titanium Nitride ◽  
Orange Juice ◽  
Ph Sensor ◽  
Reference Electrode ◽  
Cost Effective ◽  
Ph Sensing ◽  
Ph Sensors ◽  
Potential Shift ◽  
Double Junction

In this work, a solid-state potentiometric pH sensor is designed by incorporating a thin film of Radio Frequency Magnetron Sputtered (RFMS) Titanium Nitride (TiN) working electrode and a commercial Ag|AgCl|KCl double junction reference electrode. The sensor shows a linear pH slope of −59.1 mV/pH, R2 = 0.9997, a hysteresis as low as 1.2 mV, and drift below 3.9 mV/h. In addition, the redox interference performance of TiN electrodes is compared with that of Iridium Oxide (IrO2) counterparts. Experimental results show −32 mV potential shift (E0 value) in 1 mM ascorbic acid (reducing agent) for TiN electrodes, and this is significantly lower than the −114 mV potential shift of IrO2 electrodes with sub-Nernstian sensitivity. These results are most encouraging and pave the way towards the development of miniaturized, cost-effective, and robust pH sensors for difficult matrices, such as wine and fresh orange juice.

The impact cross section of ErF3 centers in ZnS thin film

1988 ◽  
Vol 40-41 ◽  
pp. 786-787
Author(s):  
Baozhu Luo ◽  
Jiaqi Yu ◽  
Guozhu Zhong
Keyword(s):  
Thin Film ◽  
Cross Section ◽  
The Impact

Hydrogenated Nanocrystalline Silicon Thin Film Transistor Array for X-ray Detector Application

2008 ◽  
Vol 1066 ◽  
Author(s):  
Kyung-Wook Shin ◽  
Mohammad R. Esmaeili-Rad ◽  
Andrei Sazonov ◽  
Arokia Nathan
Keyword(s):  
Thin Film ◽  
Amorphous Silicon ◽  
Threshold Voltage ◽  
Hydrogenated Amorphous Silicon ◽  
Nanocrystalline Silicon ◽  
Amorphous Selenium ◽  
Breakdown Field ◽  
Storage Capacitor ◽  
X Ray ◽  
Hydrogenated Amorphous

ABSTRACTHydrogenated nanocrystalline silicon (nc-Si:H) has strong potential to replace the hydrogenated amorphous silicon (a-Si:H) in thin film transistors (TFTs) due to its compatibility with the current industrial a-Si:H processes, and its better threshold voltage stability [1]. In this paper, we present an experimental TFT array backplane for direct conversion X-ray detector, using inverted staggered bottom gate nc-Si:H TFT as switching element. The TFTs employed a nc-Si:H/a-Si:H bilayer as the channel layer and hydrogenated amorphous silicon nitride (a-SiNx) as the gate dielectric; both layers deposited by plasma enhanced chemical vapor deposition (PECVD) at 280°C. Each pixel consists of a switching TFT, a charge storage capacitor (Cpx), and a mushroom electrode which serves as the bottom contact for X-ray detector such as amorphous selenium photoconductor. The chemical composition of the a-SiNx was studied by Fourier transform infrared spectroscopy. Current-voltage measurements of the a-SiNx film demonstrate that a breakdown field of 4.3 MV/cm.. TFTs in the array exhibits a field effect mobility (μEF) of 0.15 cm2/V·s, a threshold voltage (VTh) of 5.71 V, and a subthreshold leakage current (Isub) of 10−10 A. The fabrication sequence and TFT characteristics will be discussed in details.

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