Effect of thickness of thin film SnO2 based LPG sensors

2011 ◽  
Vol 1288 ◽  
Author(s):  
Divya Haridas ◽  
K. Sreenivas ◽  
Vinay Gupta
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Optical Properties ◽  
Sensor Response ◽  
Operating Characteristics ◽  
Sensing Element ◽  
Response Characteristics ◽  
Lpg Sensor ◽  
Rate Of Response ◽  
Main Operating

ABSTRACTThis paper reports the response characteristics of rf-sputtered SnO2 thin films (of varying thickness) for LPG detection. To monitor and precisely measure leakages, the development of a reliable LPG sensor with improved sensitivity is crucial in preventing fatal accidents. In the present study, thin film of SnO2 is used as the sensing element for LPG sensor. The thickness of a thin film is a very important parameter and determines their main operating characteristics, such as sensor response, rate of response, and working temperature. In the present study, thickness of SnO2 film is varied between 30 nm to 180 nm. The structure, composition and optical properties of SnO2 thin films have been examined by XRD, SEM, AFM and UV-Vis. The crystallite size for 90 nm thin film (for (110) plane) is found to be the smallest ~4-5 nm. Sensor response $(S = \left( {{{R_a - R_g } \over {R_a }}} \right) \times 100\% )$ increases with thickness of the sensing film, with a highest sensor response (~67%) observed for 90 nm thin film and thereafter it decreases. The structural and optical properties clearly support the observed enhanced sensor response for 90 nm thin film.

The Optical Properties of Thin Films Tin Oxide with Triple Doping (Aluminum, Indium, and Fluorine) for Electronic Device

2021 ◽  
Vol 317 ◽  
pp. 477-482
Author(s):  
Aris Doyan ◽  
Susilawati ◽  
Muhammad Taufik ◽  
Syamsul Hakim ◽  
Lalu Muliyadi
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Activation Energy ◽  
Optical Properties ◽  
Tin Oxide ◽  
Electronic Device ◽  
Film Material ◽  
Mass Percentage ◽  
Gap Energy ◽  
As Doping

Tin oxide (SnO2) thin film is a form of modification of semiconductor material in nanosize. The thin film study aims to analyze the effect of triple doping (Aluminum, Indium, and Fluorine) on the optical properties of SnO2: (Al + In + F) thin films. Aluminum, Indium, and Fluorine as doping SnO2 with a mass percentage of 0, 5, 10, 15, 20, and 25% of the total thin-film material. The addition of Al, In, and F doping causes the thin film to change optical properties, namely the transmittance and absorbance values ​​changing. The transmittance value is 67.50, 73.00, 82.30, 87.30, 94.6, and 99.80 which is at a wavelength of 350 nm for the lowest to the highest doping percentage, respectively. The absorbance value increased with increasing doping percentage at 300 nm wavelength of 0.52, 0.76, 0.97, 1.05, 1.23, and 1.29 for 0, 5, 10, 15, 20, and 25% doping percentages, respectively. The absorbance value is then used to find the gap energy of the SnO2: (Al + In + F) thin film of the lowest doping percentage to the highest level i.e. 3.60, 3.55, 3.51, 3.47, 3.42, and 3.41 eV. Thin-film activation energy also decreased with values of 2.27, 2.04, 1.85, 1.78, 1.72, and 1.51 eV, respectively for an increasing percentage of doping. The thin-film SnO2: (Al + In + F) which experiences a gap energy reduction and activation energy makes the thin film more conductive because electron mobility from the valence band to the conduction band requires less energy and faster electron movement as a result of the addition of doping.

scholarly journals In2O3- and SnO2-Based Thin Film Ozone Sensors: Fundamentals

2016 ◽  
Vol 2016 ◽  
pp. 1-31 ◽  
Author(s):  
G. Korotcenkov ◽  
V. Brinzari ◽  
B. K. Cho
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Solid State ◽  
Metal Oxides ◽  
Sensor Response ◽  
Present Review ◽  
Air Humidity ◽  
Kinetics Of

The paper considers SnO2and In2O3thin films as materials for the design of solid-state conductometric ozone sensors in depth. In particular, the present review covers the analysis of the fundamentals of SnO2- and In2O3-based conductometric ozone sensor operation. The main focus is on the description of mechanisms of ozone interaction with metal oxides, the influence of air humidity on sensor response, and processes that control the kinetics of sensor response to ozone.

ELECTRICAL AND OPTICAL PROPERTIES OF ZnO THIN FILMS PREPARED BY R.F. MAGNETRON SPUTTERING

2011 ◽  
Vol 25 (20) ◽  
pp. 2741-2749 ◽  
Author(s):  
J. C. ZHOU ◽  
L. LI ◽  
L. Y. RONG ◽  
B. X. ZHAO ◽  
Y. M. CHEN ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Optical Properties ◽  
Magnetron Sputtering ◽  
Oxide Thin Film ◽  
Zno Thin Films ◽  
Zno Thin Film ◽  
Electrical And Optical Properties ◽  
Axis Orientation ◽  
Sputtering Power

High transparency and conductivity of transparent conducting oxide thin film are very important for improving the efficiency of solar cells. ZnO thin film is a better candidate for transparent conductive layer of solar cell. N-type ZnO thin films were prepared by radio-frequency magnetron sputtering on glass substrates. ZnO thin films underwent annealing treatment after deposition. The influence of the sputtering power on the surface morphology, the electrical and optical properties were studied by AFM, XRD, UV2450 and HMS-3000. The experimental results indicate that the crystal quality of ZnO thin film is improved and all films show higher c-axis orientation with increasing sputtering power from 50 to 125 W. The average transparency of ZnO thin films is higher than 90% in the range of 400–900 nm between the sputtering power of 50–100 W. After the rapid thermal annealing at 550°C for 300 s under N2 ambient, the minimum resistivity reach to 10-2Ω⋅ cm .

Investigation on V2O5 Thin Films Prepared by Spray Pyrolysis Technique

2018 ◽  
Vol 17 (03) ◽  
pp. 1760037 ◽  
Author(s):  
A. Nancy Anna Anasthasiya ◽  
K. Gowtham ◽  
R. Shruthi ◽  
R. Pandeeswari ◽  
B. G. Jeyaprakash
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Optical Properties ◽  
Spray Pyrolysis ◽  
Glass Substrate ◽  
Spray Pyrolysis Technique ◽  
Precursor Solution ◽  
Xrd Pattern ◽  
Good Crystallinity ◽  
Solution Volume

The spray pyrolysis technique was employed to deposit V2O5 thin films on a glass substrate. By varying the precursor solution volume from 10[Formula: see text]mL to 50[Formula: see text]mL in steps of 10[Formula: see text]mL, films of various thicknesses were prepared. Orthorhombic polycrystalline V2O5 films were inferred from the XRD pattern irrespective of precursor solution volume. The micro-Raman studies suggested that annealed V2O5 thin film has good crystallinity. The effect of precursor solution volume on morphological and optical properties were analysed and reported.

scholarly journals Structural, Optoelectrical, Linear, and Nonlinear Optical Characterizations of Dip-Synthesized Undoped ZnO and Group III Elements (B, Al, Ga, and In)-Doped ZnO Thin Films

Crystals ◽  
2020 ◽  
Vol 10 (4) ◽  
pp. 252 ◽  
Author(s):  
A. M. Alsaad ◽  
A. A. Ahmad ◽  
I. A. Qattan ◽  
Qais M. Al-Bataineh ◽  
Zaid Albataineh
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Grain Size ◽  
Optical Properties ◽  
Nonlinear Optical ◽  
Zno Thin Films ◽  
Zno Films ◽  
Optical Parameters ◽  
Group Iii ◽  
Doped Zno

Undoped ZnO and group III (B, Al, Ga, and In)-doped ZnO thin films at 3% doping concentration level are dip-coated on glass substrates using a sol-gel technique. The optical properties of the as-prepared thin films are investigated using UV–Vis spectrophotometer measurements. Transmittance of all investigated thin films is found to attain high values of ≥80% in the visible region. We found that the index of refraction of undoped ZnO films exhibits values ranging between 1.6 and 2.2 and approximately match that of bulk ZnO. Furthermore, we measure and interpret nonlinear optical parameters and the electrical and optical conductivities of the investigated thin films to obtain a deeper insight from fundamental and practical points of view. In addition, the structural properties of all studied thin film samples are investigated using the XRD technique. In particular, undoped ZnO thin film is found to exhibit a hexagonal structure. Due to the large difference in size of boron and indium compared with that of zinc, doping ZnO thin films with these two elements is expected to cause a phase transition. However, Al-doped ZnO and Ga-doped ZnO thin films preserve the hexagonal phase. Moreover, as boron and indium are introduced in ZnO thin films, the grain size increases. On the other hand, grain size is found to decrease upon doping ZnO with aluminum and gallium. The drastic enhancement of optical properties of annealed dip-synthesized undoped ZnO thin films upon doping with group III metals paves the way to tune these properties in a skillful manner, in order to be used as key candidate materials in the fabrication of modern optoelectronic devices.

SYNTHESIS OF IODINE DOPED n-BMA THIN FILMS VIA PLASMA POLYMERIZATION TECHNIQUE: EFFECT ON OPTICAL PROPERTIES

2019 ◽  
Vol 27 (04) ◽  
pp. 1950133
Author(s):  
RAHIMA NASRIN ◽  
HUMAYUN KABIR ◽  
A. H. BHUIYAN
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Optical Properties ◽  
Plasma Polymerization ◽  
Film Surface ◽  
Microscopic Analysis ◽  
Butyl Methacrylate ◽  
Root Mean Square Roughness ◽  
Iodine Doping ◽  
Thin Film Surface

In order to understand the variation of surface morphology and optical properties due to modification, an attempt has been made to synthesize iodine-doped n-butyl methacrylate thin films through plasma polymerization technique. Field emission scanning electron microscope images displayed that the surface of the modified plasma polymerized n-butyl methacrylate (PPnBMA) thin films became smooth after iodine doping. Atomic force microscopic analysis reveals that with increasing doping time from 0[Formula: see text]min to 60[Formula: see text]min the surface root-mean-square roughness value is decreased from 0.68[Formula: see text]nm to 0.51[Formula: see text]nm, which suggests that roughness of the PPnBMA thin film surface quite improved due to iodine doping. UV-Vis absorption spectroscopic analyses exhibited that iodine doping noticeably decreased both the direct and indirect energy bandgap values of PPnBMA thin film. The effect of doping by iodine on absorption coefficient, extinction coefficient, etc. of these thin films have been also discussed.

The effect of thin film thickness on thermal nonlinear optical properties and surface morphology of Cu nanostructure thin films

Optik ◽  
2019 ◽  
Vol 199 ◽  
pp. 163517 ◽  
Author(s):  
Mahsa Etminan ◽  
Nooshin. S. Hosseini ◽  
Narges Ajamgard ◽  
Ataalah Koohian ◽  
Mehdi Ranjbar
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Optical Properties ◽  
Surface Morphology ◽  
Film Thickness ◽  
Nonlinear Optical ◽  
Nonlinear Optical Properties ◽  
Thin Film Thickness

Analyzing TEM Images for Accurate Determination of Lattice Parameters of Vacuum Evaporated SnSe Thin Film by Image Processing Software

2016 ◽  
Vol 1141 ◽  
pp. 51-53
Author(s):  
Chetan Zankat ◽  
V.M. Pathak ◽  
Pratik Pataniya ◽  
G.K. Solanki ◽  
K.D. Patel ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Image Processing ◽  
Optical Properties ◽  
Room Temperature ◽  
Accurate Determination ◽  
Lattice Parameters ◽  
Processing Software ◽  
Image Processing Software

Amorphous SnSe thin films were deposited by thermal evaporation technique on glass substrates kept at room temperature in a vacuum better than 10-5Torr. A detailed study of structural and optical properties of 150 nm thin film was carried out. The selected area diffraction patterns obtained by TEM for this thin film were analyzed by a new method that involves accurate determination of lattice parameters by image processing software. The obtained results are in good agreement with the JCPDS data. Optical transmission spectra obtained at room temperature were analyzed to study optical properties of deposited thin films. It has been found that indirect carrier transition is responsible for optical absorption process in the deposited thin films.

Soluble polycyclosilane–polysiloxane hybrid material and silicon thin film with optical properties at 193 nm and etch selectivity

2015 ◽  
Vol 3 (2) ◽  
pp. 239-242 ◽  
Author(s):  
Sung Jin Park ◽  
Hyeon Mo Cho ◽  
Myong Euy Lee ◽  
Miyoung Kim ◽  
Kwenwoo Han ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Optical Properties ◽  
Hybrid Materials ◽  
Hybrid Material ◽  
Silicon Thin Film ◽  
New Class ◽  
Silicon Thin Films ◽  
193 Nm

Silicon thin films that fulfil the needs of current semiconductor lithography were prepared from a new class of polycyclosilane–polysiloxane hybrid materials.

Enhanced Electrical Properties of AZO/IZO Multilayered Thin Film with Post Laser Annealing Process

2021 ◽  
Vol 21 (3) ◽  
pp. 1971-1977
Author(s):  
Jihye Kang ◽  
Dongsu Park ◽  
Donghun Lee ◽  
Masao Kamiko ◽  
Sung-Jin Kim ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Optical Properties ◽  
Multilayer Structure ◽  
Laser Annealing ◽  
Transparent Conducting Oxide ◽  
Sol Gel ◽  
Electrical And Optical Properties ◽  
Vis Spectroscopy ◽  
Doped Zno

In this research, alternative deposition process of ZnO-based thin films have been studied for transparent conducting oxide (TCO) application. To improve the electrical and optical properties of transparent oxide thin films, alternatively stacked Al-doped ZnO and In-doped ZnO thin films were investigated. Multilayer structure of alternative 6 layers of thin films were prepared in this research. Especially, Aluminum and Indium were chosen as dopant materials. Thin films of Al-doped ZnO (AZO) and In-doped ZnO (IZO) were alternatively deposited by spin coating with sol-gel method. After deposition of multilayered thin films, multi steps of furnace (F), rapid thermal annealing (R) and CO2 laser annealing (L) processes were carried out and investigated thin film properties by dependence of post-annealing sequence and thin film structures. The electrical and optical properties of thin films were investigated by 4-point probe and UV-vis spectroscopy and its shows the greatest sheet resistance value of 0.59 kΩ/sq. from AZO/IZO multilayered structure and upper 85% of transmittance. The structural property and surface morphology were measured by X-Ray Diffraction (XRD) and field emission scanning electron microscopy (FE-SEM). The Al- and In-doped ZnO thin film shows the highest intensity value at (002) peak of AZO/IZO multilayer structure which was performed FRL process.

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