Soluble polycyclosilane–polysiloxane hybrid material and silicon thin film with optical properties at 193 nm and etch selectivity

2015 ◽  
Vol 3 (2) ◽  
pp. 239-242 ◽  
Author(s):  
Sung Jin Park ◽  
Hyeon Mo Cho ◽  
Myong Euy Lee ◽  
Miyoung Kim ◽  
Kwenwoo Han ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Optical Properties ◽  
Hybrid Materials ◽  
Hybrid Material ◽  
Silicon Thin Film ◽  
New Class ◽  
Silicon Thin Films ◽  
193 Nm

Silicon thin films that fulfil the needs of current semiconductor lithography were prepared from a new class of polycyclosilane–polysiloxane hybrid materials.

Porous silicon thin film gas sensor

2001 ◽  
Vol 664 ◽  
Author(s):  
I. Ferreira ◽  
E. Fortunato ◽  
R. Martins
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Porous Silicon ◽  
Chemical Vapour ◽  
Preparation Condition ◽  
Current Response ◽  
Silicon Thin Film ◽  
Silicon Thin Films ◽  
Nano Crystalline ◽  
Gas Detector

ABSTRACTThe performances of amorphous and nano-crystalline porous silicon thin films as gas detector are pioneer reported in this work. The films were produced by the hot wire chemical vapour deposition (HW-CVD). These films present a porous like-structure, which is due to the uncompensated bonds and oxidise easily in the presence of air. This behaviour is a problem when the films are used for solar cells or thin film transistors. For as gas detectors, the oxidation is a benefit, since the CO, H2 or O2 molecules replace the OH adsorbed group. In the present study we observe the behaviour of amorphous and nano-crystalline porous silicon thin films under the presence of ethanol, at room temperature. The data obtained reveal a change in the current values recorded by more than three orders of magnitude, depending on the film preparation condition. This current behaviouris due to the adsorption of the OH chemical group by the Si uncompensated bonds as can be observed in the infrared spectra. Besides that, the current response and its recover time are done in few seconds.

The Structure of Silicon Thin Films Grown on Sapphire by MBE

1987 ◽  
Vol 107 ◽  
Author(s):  
M. E. Twigg ◽  
J. G. Pellegrino ◽  
E. D. Richmond
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Vapor Deposition ◽  
Molecular Beam ◽  
Film Growth ◽  
Chemical Vapor ◽  
Thin Film Growth ◽  
Silicon Thin Film ◽  
Silicon Thin Films ◽  
Transmission Electron

AbstractFrom a series of imaging experiments performed in the transmission electron microscope (TEM), it is apparent that for silicon grown on sapphire (SOS) by molecular beam epitaxy (MBE), silicon thin film growth on the (1012) sapphire plane resembles that observed for analogous films grown by chemical vapor deposition (CVD). At 900°C very thin (150A) silicon films grow as islands with either the (001) or (110) planes parallel to the (1012) plane; it is also found that most of the silicon grows as (001) rather than (110) islands, as is true for CVD-grown SOS. The orientation, however, of (110) islands occuring in this MBE-grown SOS sample differs from that of (110) islands occuring in CVD-grown SOS. By following this initial 150A of growth with 2500A of silicon deposited at. 750°C, a continuous (001) film was grown in which microtwins appear to be the predominant defect. The MBE-grown SOS also resembles that grown by CVD in that the microtwin densities associated with the “majority” and “minority” twinning systems are influenced by the orientation of the sapphire substrate.

Towards an electronic grade nanoparticle-assembled silicon thin film by ballistic deposition at room temperature: the deposition method, and structural and electronic properties

2017 ◽  
Vol 5 (15) ◽  
pp. 3725-3735 ◽  
Author(s):  
Giorgio Nava ◽  
Francesco Fumagalli ◽  
Salvatore Gambino ◽  
Isabella Farella ◽  
Giorgio Dell'Erba ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Electronic Properties ◽  
High Throughput ◽  
Room Temperature ◽  
Plasma Synthesis ◽  
Deposition Method ◽  
Silicon Thin Film ◽  
Silicon Thin Films ◽  
Structural And Electronic Properties

High-throughput plasma synthesis of highly crystalline nanoparticle-assembled silicon thin films.

Silicon Thin-Film Lattice Dynamics and Thermal Transport Properties

2012 ◽  
Author(s):  
Bruce L. Davis ◽  
Mehmet Su ◽  
Ihab El-Kady ◽  
Mahmoud I. Hussein
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Thermal Conductivity ◽  
Transport Properties ◽  
Lattice Dynamics ◽  
Dielectric Materials ◽  
Phonon Transport ◽  
Solid State Physics ◽  
Silicon Thin Film ◽  
Silicon Thin Films

Thin films composed of dielectric materials are attracting growing interest in the solid state physics and nanoscale heat transfer communities. This is primarily due to their unique thermal and electronic properties and their extensive use as components in optoelectronic, and potentially in thermoelectric, devices. In this paper, an elaborate study is presented on silicon thin films ranging from a few nanometers in thickness to very thick bulk-like thicknesses. Full lattice dynamics calculations are performed incorporating the entire film cross section and the relaxation of the free surfaces. The phonon properties emerging from these calculations are then incorporated into Holland-Callaway models to predict the thermal conductivity and other phonon transport properties. A rigorous curve fitting process to a limited set of available experimental data is carried out to obtain the scattering lifetimes. Our results demonstrate the importance of proper consideration of the full thin-film dispersion description and provide insights into the relationship between thermal conductivity, film thickness and temperature.

Room-Temperature Deposition of Silicon Thin Films by RF Magnetron Sputtering

2012 ◽  
Vol 576 ◽  
pp. 543-547 ◽  
Author(s):  
Shaiful Bakhtiar Hashim ◽  
Norhidayatul Hikmee Mahzan ◽  
Sukreen Hana Herman ◽  
Mohamad Rusop Mahmood
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Magnetron Sputtering ◽  
Glass Substrate ◽  
Room Temperature ◽  
Rf Magnetron Sputtering ◽  
Deposition Pressure ◽  
Silicon Thin Film ◽  
Silicon Thin Films ◽  
Temperature Deposition

Silicon thin film was successfully deposited on glass substrate using Radio frequency (RF) magnetron sputtering. The effect of deposition pressure on the physical and structural properties of thin films on the glass substrate was studied. The film thickness and deposition rate decreased with decreasing deposition pressure. Field emission scanning electron microscopy (FESEM) shows as the deposition pressure increased, the surface morphology transform from concise structured to not closely pack on the surface. Raman spectroscopy result showed that the peak was around 508 cm-1, showing that the thin film is nanocrystalline instead of polycrystalline silicon.

scholarly journals Grown Low-Temperature Microcrystalline Silicon Thin Film by VHF PECVD for Thin Films Solar Cell

2015 ◽  
Vol 2015 ◽  
pp. 1-5 ◽  
Author(s):  
Shanglong Peng ◽  
Desheng Wang ◽  
Fuhua Yang ◽  
Zhanguo Wang ◽  
Fei Ma
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Solar Cells ◽  
Solar Cell ◽  
Short Circuit ◽  
High Growth ◽  
Microcrystalline Silicon ◽  
Silicon Thin Film ◽  
Very High Frequency ◽  
Silicon Thin Films

Hydrogenated microcrystalline silicon thin films can be used to fabricate stable thin film solar cell, which were deposited by very high frequency plasma-enhanced chemical vapor deposition at low temperatures (~200°C). It has been found that the obtained film presented excellent structural and electrical properties, such as high growth rate and good crystallinity. With the decreasing of silane concentration, the optical gap and the dark conductivity increased, whereas the activation energy decreased. A reasonable explanation was presented to elucidate these phenomena. In addition, we fabricated p-i-n structure solar cells using the optimum microcrystalline silicon thin films, and preliminary efficiency of 4.6% was obtained for 1 μm thick microcrystalline silicon thin film solar cells with open-circuits voltage of 0.773 V and short-circuits current density of 12.28 mA/cm2. Future scope for performance improvement lies mainly in further increasing the short-circuit current.

The Optical Properties of Thin Films Tin Oxide with Triple Doping (Aluminum, Indium, and Fluorine) for Electronic Device

2021 ◽  
Vol 317 ◽  
pp. 477-482
Author(s):  
Aris Doyan ◽  
Susilawati ◽  
Muhammad Taufik ◽  
Syamsul Hakim ◽  
Lalu Muliyadi
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Activation Energy ◽  
Optical Properties ◽  
Tin Oxide ◽  
Electronic Device ◽  
Film Material ◽  
Mass Percentage ◽  
Gap Energy ◽  
As Doping

Tin oxide (SnO2) thin film is a form of modification of semiconductor material in nanosize. The thin film study aims to analyze the effect of triple doping (Aluminum, Indium, and Fluorine) on the optical properties of SnO2: (Al + In + F) thin films. Aluminum, Indium, and Fluorine as doping SnO2 with a mass percentage of 0, 5, 10, 15, 20, and 25% of the total thin-film material. The addition of Al, In, and F doping causes the thin film to change optical properties, namely the transmittance and absorbance values ​​changing. The transmittance value is 67.50, 73.00, 82.30, 87.30, 94.6, and 99.80 which is at a wavelength of 350 nm for the lowest to the highest doping percentage, respectively. The absorbance value increased with increasing doping percentage at 300 nm wavelength of 0.52, 0.76, 0.97, 1.05, 1.23, and 1.29 for 0, 5, 10, 15, 20, and 25% doping percentages, respectively. The absorbance value is then used to find the gap energy of the SnO2: (Al + In + F) thin film of the lowest doping percentage to the highest level i.e. 3.60, 3.55, 3.51, 3.47, 3.42, and 3.41 eV. Thin-film activation energy also decreased with values of 2.27, 2.04, 1.85, 1.78, 1.72, and 1.51 eV, respectively for an increasing percentage of doping. The thin-film SnO2: (Al + In + F) which experiences a gap energy reduction and activation energy makes the thin film more conductive because electron mobility from the valence band to the conduction band requires less energy and faster electron movement as a result of the addition of doping.

Effect of Nitrogen Doping on the Structure and Optical Properties of N-Type Hydrogenated Amorphous Silicon Thin Films

2011 ◽  
Vol 383-390 ◽  
pp. 6980-6985
Author(s):  
Mao Yang Wu ◽  
Wei Li ◽  
Jun Wei Fu ◽  
Yi Jiao Qiu ◽  
Ya Dong Jiang
Keyword(s):  
Thin Films ◽  
Optical Properties ◽  
Amorphous Silicon ◽  
Photoelectron Spectroscopy ◽  
Gas Flow ◽  
Hydrogenated Amorphous Silicon ◽  
Chemical Vapor ◽  
Silicon Thin Films ◽  
Frequency Plasma ◽  
Hydrogenated Amorphous

Hydrogenated amorphous silicon (a-Si:H) thin films doped with both Phosphor and Nitrogen are deposited by ratio frequency plasma enhanced chemical vapor deposition (PECVD). The effect of gas flow rate of ammonia (FrNH3) on the composition, microstructure and optical properties of the films has been investigated by X-ray photoelectron spectroscopy, Raman spectroscopy and ellipsometric spectra, respectively. The results show that with the increase of FrNH3, Si-N bonds appear while the short-range order deteriorate in the films. Besides, the optical properties of N-doped n-type a-Si:H thin films can be easily controlled in a PECVD system.

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