scholarly journals Ion Beam Irradiation-induced Amorphization in Nano-sized KxLnyTa2O7-v Tantalate Pyrochlore

2011 ◽  
Vol 1298 ◽  
Author(s):  
Fengyuan Lu ◽  
May Nyman ◽  
Yiqiang Shen ◽  
Zhili Dong ◽  
Gongkai Wang ◽  
...  

ABSTRACTThe radiation response of nano-sized tantalate pyrochlores, KxLnyTa2O7-v (Ln = Gd, Y, and Lu) with average grain sizes of ~ 10 nm was investigated using 1 MeV Kr2+ ion beam irradiations. EDS measurements and XRD refinement reveal that the Y3+ and Lu3+-doped samples consist of two pyrochlore phases as K0.8YTa2O6.9/K0.4Y0.8Ta2O6.4 and KLuTa2O7/K0.4Lu0.8Ta2O6.4 respectively; whereas a single phase of K0.8GdTa2O7 only exists in the Gd3+-doped tantalate pyrochlore. In situ TEM observation confirms ion beam-induced amorphization occurring in all of the nano-sized KxLnyTa2O7-v. At elevated temperatures, both K0.8GdTa2O7 and K0.8YTa2O6.9/K0.4Y0.8Ta2O6.4 exhibit higher radiation tolerance than KLuTa2O7/K0.4Lu0.8Ta2O6.4, and the critical temperatures of K0.8GdTa2O7 and K0.8YTa2O6.9/K0.4Y0.8Ta2O6.4 are estimated to be 1167 ± 41 K and 1165 ± 34 K, respectively, lower than that of KLuTa2O7/K0.4Lu0.8Ta2O6.4 (~ 1291 K). The K0.8GdTa2O7, K0.8YTa2O6.9 and KLuTa2O7 phases have less structural deviation from the parent fluorite structure and thus may be responsible for the overall radiation tolerance. The high K+ occupancy at pyrochlore A sites in KLuTa2O7 is believed to contribute to the decrease of radiation tolerance, consistent with the large ionic radius ratio of K+/Ta5+. These results highlight that the radiation tolerance of nanostructured materials is highly compositional dependent, and nano-sized tantalate pyrochlores are sensitive to radiation damage.

Author(s):  
Charles W. Allen ◽  
Robert C. Birtcher

The uranium silicides, including U3Si, are under study as candidate low enrichment nuclear fuels. Ion beam simulations of the in-reactor behavior of such materials are performed because a similar damage structure can be produced in hours by energetic heavy ions which requires years in actual reactor tests. This contribution treats one aspect of the microstructural behavior of U3Si under high energy electron irradiation and low dose energetic heavy ion irradiation and is based on in situ experiments, performed at the HVEM-Tandem User Facility at Argonne National Laboratory. This Facility interfaces a 2 MV Tandem ion accelerator and a 0.6 MV ion implanter to a 1.2 MeV AEI high voltage electron microscope, which allows a wide variety of in situ ion beam experiments to be performed with simultaneous irradiation and electron microscopy or diffraction.At elevated temperatures, U3Si exhibits the ordered AuCu3 structure. On cooling below 1058 K, the intermetallic transforms, evidently martensitically, to a body-centered tetragonal structure (alternatively, the structure may be described as face-centered tetragonal, which would be fcc except for a 1 pet tetragonal distortion). Mechanical twinning accompanies the transformation; however, diferences between electron diffraction patterns from twinned and non-twinned martensite plates could not be distinguished.


1992 ◽  
Vol 191-194 ◽  
pp. 268-271 ◽  
Author(s):  
Yoshiyuki Asaoka ◽  
Hirotake Moriyama ◽  
Kimihiko Iwasaki ◽  
Kimikazu Moritani ◽  
Yasuhiko Ito

Author(s):  
Jianbing Huang ◽  
Zongqiang Mao ◽  
Bin Zhu ◽  
Lizhai Yang ◽  
Ranran Peng ◽  
...  

A novel method was developed to prepare fine doped ceria (DCO) powders directly. Ceria doped with 20 mol. % of samarium (Ce0.8Sm0.2O1.9, SDC) was prepared by in-situ oxidization of hydroxide precipitates with H2O2 in the solutions. The resultant powder desiccated at 85°C overnight was characterized by X-ray diffraction (XRD), thermogravimetry /differential thermal analysis (TG/DTA), and transmission electron microscopy (TEM). The XRD pattern showed that the as-dried SDC powder is single phase with a cubic fluorite structure like that of pure CeO2. An anode-supported SOFC was also fabricated based on SDC and 20wt. % (62mol. %Li2CO3–38 mol. %K2CO3) composite electrolyte, LiNiO2 as cathode and NiO as anode, by cold pressing. Using hydrogen as the fuel and air as the oxidant, the I-V and I-P characteristics exhibit excellent performances and the maximum power densities are about 696, 469, 377 and 240 mWcm−2 at 650, 600, 550 and 500°C, respectively.


2004 ◽  
Vol 19 (5) ◽  
pp. 1575-1580 ◽  
Author(s):  
Jie Lian ◽  
Rodney C. Ewing ◽  
L.M. Wang ◽  
K.B. Helean

Ceramics with III-IV pyrochlore compositions, A3+2B4+2O7 (A = Y and rare earth elements; B = Ti, Zr, Sn, or Hf), show a wide range of responses to ion-beam irradiation. To evaluate the role of the B-site cations on the radiation stability ofthe pyrochlore structure-type, Gd2Sn2O7 and Gd2Hf2O7 have been irradiated by1 MeV Kr+. The results are discussed in terms of the ionic size and type ofbonding of Sn4+ and Hf4+ and compared to previous results for titanate andzirconate pyrochlores. Gd2Sn2O7 is sensitive to ion beam–induced amorphizationwith a critical amorphization dose of approximately 3.4 displacements per atom(dpa) (2.62 × 1015 ions/cm2) at room temperature and a critical amorphization temperature of approximately 350 K. Gd2Hf2O7 does not become amorphous at adose of approximately 4.54 displacement per [lattice] atom (3.13 × 1015 ions/cm2) at room temperature, but instead is transformed to a disordered fluorite structure upon ion-beam irradiation. Although the radius ratio of the A- to B-site cations provides a general indication of the type of radiation response of different pyrochlore compositions, the results for Gd2Sn2O7 emphasize the importance of bond type, particularly the covalency of the 〈Sn–O〉 bond in determining the radiation response.


2014 ◽  
Vol 1 (1) ◽  
Author(s):  
M. Winhold ◽  
P. M. Weirich ◽  
C. H. Schwalb ◽  
M. Huth

AbstractFocused electron beam induced deposition presents a promising technique for the fabrication of nanostructures. However, due to the dissociation of mostly organometallic precursor molecules employed for the deposition process, prepared nanostructures contain organic residues leading to rather low conductance of the deposits. Post-growth treatment of the structures by electron irradiation or in reactive atmospheres at elevated temperatures can be applied to purify the samples. Recently, an in-situ conductance optimization process involving evolutionary genetic algorithm techniques has been introduced leading to an increase of conductance by one order of magnitude for tungsten-based deposits using the precursor W(CO)6. This method even allows for the optimization of conductance of nano-structures for which post-growth treatment is not possible or desirable. However, the mechanisms responsible for the observed enhancement have not been studied in depth. In this work, we identified the dwell-time dependent change of conductivity of the samples to be the major contributor to the change of conductance. Specifically, the chemical composition drastically changes with a variation of dwelltime resulting in an increase of the metal content by 15 at% for short dwell-times. The relative change of growth rate amounts to less than 25 % and has a negligible influence on conductance. We anticipate the in-situ genetic algorithm optimization procedure to be of high relevance for new developments regarding binary or ternary systems prepared by focused electron or ion beam induced deposition.


1992 ◽  
Vol 191-194 ◽  
pp. 1219-1223 ◽  
Author(s):  
S. Furuno ◽  
K. Hojou ◽  
K. Izui ◽  
N. Kamigaki ◽  
K. Ono ◽  
...  

1993 ◽  
Vol 321 ◽  
Author(s):  
L. M. Wang ◽  
W. L. Gong ◽  
R. C. Ewing

ABSTRACTThe temperature dependence of the critical amorphization dose, Dc, of four A2BO4 compositions, forsterite (Mg2SiO4), fayalite (Fe2SiO4), synthetic Mg2GeO4, and phenakite (Be2SiO4) was investigated by in situ TEM during 1.5 MeV Kr+ion beam irradiation at temperatures between 15 to 700 K. For the Mg- and Fe-compositions, the A-site is in octahedral coordination, and the structure is a derivative hep (Pbnm); for the Be-composition, the A- and B-sites are in tetrahedral coordination, forming corner-sharing hexagonal rings (R3). Although the Dc's were quite close at 15 K for all the four compositions (0.2–0.5 dpa), Dc increased with increasing irradiation temperature at different rates. The Dc-temperature curve is the result of competition between amorphization and dynamic recovery processes. The Dc rate of increase (highest to lowest) is: Be2SiO4, Mg2SiO4, Mg2GeO4, Fe2SiO4. At room temperature, Be2SiO4 amorphized at 1.55 dpa; Fe2SiO4, at only 0.22 dpa. Based on the Dc-temperature curves, the activation energy, Ea, of the dynamic recovery process and the critical temperature, Tc, above which complete amorphization does not occur are: 0.029, 0.047, 0.055 and 0.079 eV and 390, 550, 650 and 995 K for Be2SiO4, Mg2SiO4, Mg2GeO4 and Fe2SiO4, respectively. These results are explained in terms of the materials properties (e.g., bonding and thermodynamic stability) and cascade size which is a function of the density of the phases. Finally, we note the importance of increased amorphization cross-section, as a function of temperature (e.g., the low rate of increase of Dc with temperature for Fe2SiO4).


Shinku ◽  
1993 ◽  
Vol 36 (7) ◽  
pp. 603-609
Author(s):  
Tetuo TSUKAMOTO ◽  
Kiiti HOJOU ◽  
Sigemi FURUNO ◽  
Hitosi OTSU ◽  
Kazuhiko IZUI

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