Functionalization and Environmental Stabilization of ZnO Nanobridge Sensors Fabricated using Carbonized Photoresist

2011 ◽  
Vol 1350 ◽  
Author(s):  
Ashley D. Mason ◽  
Chien-Chih Huang ◽  
Myra T. Koesdjojo ◽  
Nate D. Stephon ◽  
Vincent T. Remcho ◽  
...  
Keyword(s):  
Aqueous Solution ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Passivation Layer ◽  
Electrical Performance ◽  
Thin Coating ◽  
Environmental Sensitivity ◽  
Moisture Barrier ◽  
The Impact

ABSTRACTZnO nanobridge sensors were selectively grown and electrically connected using lithographically patterned carbonized photoresist (C-PR). As ZnO is known to dissolve in deionized (DI) water, parylene-A was investigated as a moisture barrier and potential functionalization platform. A chemical vapor deposition (CVD) process for parylene-A was developed and it was demonstrated that parylene-A coated ZnO NWs do not show any signs of dissolution after 24 hours in an aqueous solution. The impact of the parylene-A coating on the electrical performance and sensitivity of ZnO nanobridge devices was investigated. A comparison of UV, O2, and H2O sensitivity between uncoated and coated devices revealed that a thin coating of parylene-A attenuated all of these responses, suggesting the ability to modulate environmental sensitivity using this non-covalently bound polymer passivation layer.

Hydrogen Concentration Analysis in Pecvd and Rtcvd Silicon Nitride Thin Films and It's Impact on Device Performance

2001 ◽  
Vol 664 ◽  
Author(s):  
C. Y. Wang ◽  
E. H. Lim ◽  
H. Liu ◽  
J. L. Sudijono ◽  
T. C. Ang ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Threshold Voltage ◽  
Vapor Deposition ◽  
Gas Flow ◽  
Chemical Vapor ◽  
Gate Oxide ◽  
Nitride Film ◽  
Device Performance ◽  
Gas Flow Ratio ◽  
The Impact

ABSTRACTIn this paper the impact of the ESL (Etch Stop layer) nitride on the device performance especially the threshold voltage (Vt) has been studied. From SIMS analysis, it is found that different nitride gives different H concentration, [H] in the Gate oxide area, the higher [H] in the nitride film, the higher H in the Gate Oxide area and the lower the threshold voltage. It is also found that using TiSi instead of CoSi can help to stop the H from diffusing into Gate Oxide/channel area, resulting in a smaller threshold voltage drift for the device employed TiSi. Study to control the [H] in the nitride film is also carried out. In this paper, RBS, HFS and FTIR are used to analyze the composition changes of the SiN films prepared using Plasma enhanced Chemical Vapor deposition (PECVD), Rapid Thermal Chemical Vapor Deposition (RTCVD) with different process parameters. Gas flow ratio, RF power and temperature are found to be the key factors that affect the composition and the H concentration in the film. It is found that the nearer the SiN composition to stoichiometric Si3N4, the lower the [H] in SiN film because there is no excess silicon or nitrogen to be bonded with H. However the lowest [H] in the SiN film is limited by temperature. The higher the process temperature the lower the [H] can be obtained in the SiN film and the nearer the composition to stoichiometric Si3N4.

Impact of In Situ NH3 pre-treatment of LPCVD SiN passivation on GaN HEMT performance

2022 ◽  
Author(s):  
Ding-Yuan Chen ◽  
Axel R Persson ◽  
Kai Hsin Wen ◽  
Daniel Sommer ◽  
Jan Gruenenpuett ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Low Pressure ◽  
Untreated Sample ◽  
Pressure Chemical ◽  
Gan Hemts ◽  
Pre Treatment ◽  
The Impact

Abstract The impact on the performance of GaN HEMTs of in situ ammonia (NH3) pre-treatment prior to the deposition of silicon nitride (SiN) passivation with low-pressure chemical vapor deposition is investigated. Three different NH3 pre-treatment durations (0, 3, and 10 minutes) were compared in terms of interface properties and device performance. A reduction of oxygen at the interface between SiN and epi-structure is detected by Scanning Transmission Electron Microscopy-Electron Energy Loss Spectroscopy measurements in the sample subjected to 10 minutes of pre-treatment. The samples subjected to NH3 pre-treatment show a reduced surface-related current dispersion of 9 % (compared to 16% for the untreated sample), which is attributed to the reduction of oxygen at the SiN/epi interface. Furthermore, NH3 pre-treatment for 10 minutes significantly improves the current dispersion uniformity from 14.5 % to 1.9 %. The reduced trapping effects result in a high output power of 3.4 W/mm at 3 GHz (compared to 2.6 W/mm for the untreated sample). These results demonstrate that the in situ NH3 pre-treatment before low-pressure chemical vapor deposition of SiN passivation is critical and can effectively improves the large-signal microwave performance of GaN HEMTs.

Low temperature deposition of 2D WS2 layers from WF6 and H2S precursors: impact of reducing agents

2015 ◽  
Vol 51 (86) ◽  
pp. 15692-15695 ◽  
Author(s):  
A. Delabie ◽  
M. Caymax ◽  
B. Groven ◽  
M. Heyne ◽  
K. Haesevoets ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Low Temperature ◽  
Atomic Layer Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Atomic Layer ◽  
Reducing Agents ◽  
Layer Deposition ◽  
Temperature Deposition ◽  
The Impact

We demonstrate the impact of reducing agents for Chemical Vapor Deposition (CVD) and Atomic Layer Deposition (ALD) of WS2 from WF6 and H2S precursors.

Quasi-Stoichiometric Silicon Nitride Thin Films Deposited by Remote Plasma-Enhanced Chemical-Vapor Deposition

1992 ◽  
Vol 284 ◽  
Author(s):  
G. Lucovsky ◽  
Y. Ma ◽  
S. S. He ◽  
T. Yasuda ◽  
D. J. Stephens ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Silicon Nitride ◽  
Vapor Deposition ◽  
Electron Spectroscopy ◽  
Auger Electron ◽  
Chemical Vapor ◽  
Electrical Performance ◽  
Remote Plasma ◽  
Silicon Nitride Films ◽  
On Line

ABSTRACTConditions for depositing quasi-stoichiometric silicon nitride films by low-temperature, remote plasma-enhanced chemical-vapor deposition, RPECVD, have been identified using on-line Auger electron spectroscopy, AES, and off-line optical and infrared, IR, spectroscopies. Quasi-stoichiometric films, by the definition propose in this paper, do not display spectroscopic evidence for Si-Si bonds, but contain bonded-H in Si-H and Si-NH arrangements. Incorporation of RPECVD nitrides into transistor devices has demonstrated that electrical performance is optimized when the films are quasi-stoichiometric with relatively low Si-NH concentrations.

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