Investigation into the thermoelectric properties of GaSb/InAs superlattice structures

2011 ◽  
Vol 1325 ◽  
Author(s):  
Philip T. Barletta ◽  
Gary E. Bulman ◽  
Geza Dezsi ◽  
Thomas S. Colpitts ◽  
Rama Venkatasubramanian

ABSTRACTWe report on our investigation into the use of III-V superlattice structures for thermoelectric (TE) applications. Preliminary review of III-V materials trends indicate that the GaSb/InAs superlattice system should offer one of the best potentials for high thermoelectric performance in the 500K-800K range. MOCVD growth of GaSb/InAs superlattice structures was carried out, and relevant structural, thermal, and electrical characterization has been performed. TEM and XRD results demonstrate a well-ordered superlattice structure. Thermal conductivity measurements reveal a reduction in the room-temperature thermal conductivity of GaSb/InAs superlattices (4.4-10.0 W/m-K), relative to either binary GaSb (32 W/m-K) or InAs (27 W/m-K). Additionally, we have worked to optimize the thermoelectric power factor (α2σ), studying both Se- and Te-doping of the superlattice structures, in an effort to demonstrate optimal thermoelectric performance. Our results demonstrate a maximum ZT of 0.36 at 400K for optimally doped n-type GaSb/InAs superlattice structures.

2021 ◽  
Vol 12 (1) ◽  
Author(s):  
Natsumi Komatsu ◽  
Yota Ichinose ◽  
Oliver S. Dewey ◽  
Lauren W. Taylor ◽  
Mitchell A. Trafford ◽  
...  

AbstractLow-dimensional materials have recently attracted much interest as thermoelectric materials because of their charge carrier confinement leading to thermoelectric performance enhancement. Carbon nanotubes are promising candidates because of their one-dimensionality in addition to their unique advantages such as flexibility and light weight. However, preserving the large power factor of individual carbon nanotubes in macroscopic assemblies has been challenging, primarily due to poor sample morphology and a lack of proper Fermi energy tuning. Here, we report an ultrahigh value of power factor (14 ± 5 mW m−1 K−2) for macroscopic weavable fibers of aligned carbon nanotubes with ultrahigh electrical and thermal conductivity. The observed giant power factor originates from the ultrahigh electrical conductivity achieved through excellent sample morphology, combined with an enhanced Seebeck coefficient through Fermi energy tuning. We fabricate a textile thermoelectric generator based on these carbon nanotube fibers, which demonstrates high thermoelectric performance, weavability, and scalability. The giant power factor we observe make these fibers strong candidates for the emerging field of thermoelectric active cooling, which requires a large thermoelectric power factor and a large thermal conductivity at the same time.


2005 ◽  
Vol 87 (2) ◽  
pp. 023105 ◽  
Author(s):  
J. C. Caylor ◽  
K. Coonley ◽  
J. Stuart ◽  
T. Colpitts ◽  
R. Venkatasubramanian

2021 ◽  
Author(s):  
Natsumi Komatsu ◽  
Yota Ichinose ◽  
Oliver Dewey ◽  
Lauren Taylor ◽  
Mitchell Trafford ◽  
...  

Abstract Low-dimensional materials have recently attracted much interest as thermoelectric materials because of their charge carrier confinement leading to thermoelectric performance enhancement. Carbon nanotubes are promising candidates because of their one-dimensionality in addition to their unique advantages such as flexibility and light weight. However, preserving the large power factor of individual carbon nanotubes in macroscopic assemblies has been challenging, primarily due to poor sample morphology and a lack of proper Fermi energy tuning. Here, we report an unprecedentedly high value of power factor (14±5 mWm-1K-2) for centimeter-long weavable fibers of aligned carbon nanotubes with ultrahigh electrical and thermal conductivity. Our theoretical simulations show that the observed giant power factor originates from the one-dimensional quantum confinement of charge carriers, appearing when the Fermi energy is near a van Hove singularity in the electronic density of states. We fabricated a textile thermoelectric generator based on these carbon nanotube fibers, which demonstrated high thermoelectric performance, weavablity, and scalability. The giant power factor we observed make these fibers strong candidates for the emerging field of thermoelectric active cooling, which requires a large thermoelectric power factor and a large thermal conductivity at the same time.


Nano Energy ◽  
2020 ◽  
Vol 67 ◽  
pp. 104283 ◽  
Author(s):  
Tingwei Li ◽  
Jiabing Yu ◽  
Ge Nie ◽  
Bo-Ping Zhang ◽  
Qiang Sun

2016 ◽  
Vol 16 (4) ◽  
pp. 3841-3847 ◽  
Author(s):  
Lijie Guo ◽  
Zhengwei Cai ◽  
Xiaolong Xu ◽  
Kunling Peng ◽  
Guiwen Wang ◽  
...  

p-type skutterudites NdxFe3CoSb12 with x equaling 0.8, 0.85, 0.9, 0.95, 1.0 have been synthesized by solid state reaction followed by spark plasma sintering. The influence of Nd filling on electrical and thermal transport properties has been investigated in the Nd-filled skutterudite compounds in the temperature range from room temperature to 800 K. It was found that the Seebeck coefficient is drastically enhanced via filling Nd in p-Type skutterudites as well as the corresponding power factor although electrical conductivity is reduced. In addition, a large reduction in thermal conductivity is achieved by Nd fillers through rattling effect along with the In-Situ nanostructured precipitate through scattering phonons with much wider frequency. These concomitant effects result in an enhanced thermoelectric performance with the dimensionless figure of merit ZT. These observations demonstrate an exciting scientific opportunity to raise the figure-of-merit of p-type skutterudites.


2013 ◽  
Vol 665 ◽  
pp. 179-181 ◽  
Author(s):  
Anup V. Sanchela ◽  
Varun Kushwaha ◽  
Ajay. D. Thakur ◽  
C.V. Tomy

FeSb2 was recently found to be a narrow-gap semiconductor with strong electronelectron correlation and a large thermopower at low temperatures. We report measurements of the electrical resistivity, Seebeck coefficient and thermal conductivity between 5 K to 300 K on polycrystalline samples of FeSb2 and FeSb1.9. We found that the deficiency of Sb in the parent compound leads to a giant anomalous peak in thermopower (S) at low temperatures, reaching ~ 426 μV/K at 20 K, resulting in a high thermoelectric power factor at low temperatures, achieving 10 μW/K2m at 27 K.. Consequently, a significantly enhanced thermoelectric figure of merit ZT ~ 0.0015 is achieved near room temperature. At low temperatures there is no improvement in ZT values due to the high thermal conductivity (phonon dominant region). Keywords: Seebeck coefficient, thermal conductivity, resistivity, thermoelectric figure of merit. PACS: 72.20.Pa, 71.27.+a, 71.28.+d


Author(s):  
Shidong Wang ◽  
Natalio Mingo

We theoretically find that embedding silicide nanoparticles in SixGe1-x alloys is able to considerably improve the figure of merit (ZT). We have computed the thermal conductivity as a function of the sizes of NiSi2 and CoSi2 nanoparticles. We find that the optimal nanoparticle diameters minimizing the composite’s thermal conductivity are 6.9 nm for NiSi2 and 12.6 nm for CoSi2 at room temperature. We provide validity ranges of nanoparticle volume fractions that will not reduce the thermoelectric power factor, but will considerably decrease the thermal conductivity. Embedding NiSi2 or CoSi2 nanoparticles in SixGe1-x may lead to a 5-fold increase of figure of merit (ZT ∼ 0.5) at room temperature and 2.8 times increase (ZT ∼ 2.0) at 900 K. The proposed materials with high figures of merit are promising candidates to be used in integrated micro refrigerators in chips and thermoelectric power generation and waste heat recovery.


2000 ◽  
Vol 626 ◽  
Author(s):  
S. Bhattacharya ◽  
V. Ponnambalam ◽  
A.L. Pope ◽  
Y. Xia ◽  
S.J. Poon ◽  
...  

ABSTRACTHalf-Heusler alloys with the general formula TiNiSn1-XSbX are currently being investigated for their potential as thermoelectric (TE) materials. 1,2,3,4 These materials exhibit high thermopower (40–250μV/K) and low electrical resistivity values (0.1 - 8mΩ-cm) which yields a relatively large power factor (α2σT) of (0.2 - 1.0) W/m♦K at room temperature. The challenge is to reduce the relatively high thermal conductivity (≈ 10 W/m♦K) that is evident in these materials. The focus of this research is to investigate the effect of Sb-doping on the Sn site and Zr doping on the Ti site on the thermal conductivity of TiNiSn. Highly doped half-Heusler alloys have shown marked reduction in thermal conductivity to values on the order of 3.5 - 4.5 W/m♦K. Systematic determination of thermal conductivity in a variety of these doped materials as well as Sb and Zr doped TiNiSn are presented and discussed.


2000 ◽  
Vol 626 ◽  
Author(s):  
R. T. Littleton ◽  
Terry M. Tritt ◽  
B. Zawilski ◽  
J. W. Kolis ◽  
D. R. Ketchum ◽  
...  

ABSTRACTThe thermoelectric figure of merit, ZT = α2σT/λ, has been measured for pentatelluride single crystals of HfTe5, ZrTe5, as well as Se substituted pentatellurides. The parent materials, HfTe5 and ZrTe5, exhibit relatively large p- and n- type thermopower, |a| > 125 μV/K, and low resistivity, ρ ≤ 1 mΩ•cm. These values lead to a large power factor (α2σT) which is substantially increased with proper Se substitution on the Te sites. The thermal conductivity of these needle-like crystals has also been measured as a function of temperature from 10 K ≤ T ≤ 300 K. The room temperature figure of merit for these materials varies from ZT “0.1 for the parent materials to ZT ≈ 0.25 for Se substituted samples. These results as well as experimental procedures will be presented and discussed.


MRS Advances ◽  
2019 ◽  
Vol 4 (30) ◽  
pp. 1719-1725 ◽  
Author(s):  
Shrikant Saini ◽  
Ajay Kumar Baranwal ◽  
Tomohide Yabuki ◽  
Shuzi Hayase ◽  
Koji Miyazaki

ABSTRACTThermoelectric materials can play an important role to develop a sustainable energy source for internet of things devices near room temperature. In this direction, it is important to have a thermoelectric material with high thermoelectric performance. Cesium tin triiodide (CsSnI3) single crystal perovskite has shown high value of Seebeck coefficient and ultra low thermal conductivity which are necessary conditions for high thermoelectric performance. Here, we report the thermoelectric response of CsSnI3 thin films. These films are prepared by cost effective wet spin coating process at different baking temperature. Films were characterized using X-ray diffraction and scanning electron microscopy. In our case, films baked at 130°C for 5 min have shown the best thermoelectric performance at room temperature with: Seebeck coefficient 115 μV/K and electrical conductivity 124 S/cm, thermal conductivity 0.36 W/m·K and figure of merit ZT of 0.137.


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