scholarly journals Materials Characterization of CIGS solar cells on Top of CMOS chips

2011 ◽  
Vol 1325 ◽  
Author(s):  
J. Lu ◽  
W. Liu ◽  
A. Y. Kovalgin ◽  
Y. Sun ◽  
J. Schmitz
Keyword(s):  
Solar Cells ◽  
High Efficiency ◽  
Diffraction Measurement ◽  
X Ray Diffraction ◽  
Glass Substrates ◽  
Standard Glass ◽  
High Efficiency Solar Cells ◽  
Helium Ion ◽  
Cigs Solar Cells ◽  
Two Peaks

ABSTRACTIn the current work, we present a detailed study on the material properties of the CIGS layers, fabricated on top of the CMOS chips, and compare the results with the fabrication on standard glass substrates. Almost identical elemental composition on both glass and CMOS chips (within measurement error). From X-ray diffraction measurement, except two peaks from the Si <100> substrate, the diffraction peaks from CIGS solar cell CMOS chip and that on glass substrate coincide for all three temperatures. Helium ion microscope images of the cross-section and top view of the CIGS layers, shows that the grain size is suitable for high efficiency solar cells.

Characterization of Cu(In,Ga)Se2/Mo Interface in CIGS Solar Cells

1997 ◽  
Vol 485 ◽  
Author(s):  
S. Nishiwaki ◽  
N. Kohara ◽  
T. Negami ◽  
M. Nishitani ◽  
T. Wada
Keyword(s):  
Solar Cells ◽  
High Efficiency ◽  
Soda Lime ◽  
Film Deposition ◽  
Soda Lime Glass ◽  
X Ray Diffraction ◽  
Transmission Electron ◽  
Current Voltage ◽  
Stage Process ◽  
Cigs Solar Cells

AbstractThe interface between a Cu(In,Ga)Se2 (CIGS) and an underlying Mo layer was studied by X-ray diffraction and high resolution transmission electron microscopy. The CIGS layer was deposited onto Mo coated soda-lime glass using the “3-stage” process. A MoSe2 layer found to form at the CIGS/Mo interface during the 2nd stage of the “3-stage” process. The thickness of the MoSe2 layer depended on the substrate temperature used for CIGS film deposition as well as the Na content of the CIGS and/or Mo layers. For higher substrate temperatures, thicker MoSe2 layers were observed. The Na in the CIGS and/or Mo layer is felt to assist in the formation of MoSe2. Current-Voltage measurements of the heterojunction formed by the CIGS/Mo interface were ohmic even at low temperature. The role of the MoSe2 layer in high efficiency CIGS solar cells is discussed.

scholarly journals Growth and Characterization ofCd1−XZnXTe-Sintered Films

2007 ◽  
Vol 2007 ◽  
pp. 1-5 ◽  
Author(s):  
V. Kumar ◽  
G. S. Sandhu ◽  
T. P. Sharma ◽  
M. Hussain
Keyword(s):  
High Efficiency ◽  
Hexagonal Structure ◽  
X Ray Diffraction ◽  
Glass Substrates ◽  
High Efficiency Solar Cells ◽  
Vegard’S Law ◽  
Double Beam ◽  
Ternary Semiconductor ◽  
Diffraction Patterns ◽  
The Cost

The II-VI polycrystalline semiconducting materials have come under increased scrutiny because of their wide use in the cost reduction of devices for photovoltaic applications.Cd1−XZnXTe is one of the II-VI ternary semiconductor materials whose bandgap can be tailored to any value between 1.48–2.26 eV as X varies from 0 to 1. It is promising material for high-efficiency solar cells, switching, and other optoelectronic devices. Polycrystalline thin film ofCd1−XZnXTe with variable composition (0≤X≤1) has been deposited on ultraclean glass substrates by screen printing method followed by sintering process. The optical and structural properties ofCd1−XZnXTe thin films have been examined. The optical bandgap of these films is studied using reflection spectra in wavelength range of 350–900 nm by using double beam spectrophotometer. The structure of sample was determined from X-ray diffraction patterns. The films were polycrystalline in nature having wurtzite (Hexagonal) structure over the whole range studied. The lattice parameters vary almost linearly with the composition parameterX, following Vegard's law. Sintering is a very simple and viable method compared to other cost-intensive methods. The results of the present investigation will be useful in characterizing the material CdZnTe for its applications in photovoltaics.

High Efficiency Solar Cells with Intrinsic Microcrystalline Silicon Absorbers Deposited at High Rates by VHF-PECVD

2005 ◽  
Vol 862 ◽  
Author(s):  
Yaohua Mai ◽  
Stefan Klein ◽  
Reinhard Carius ◽  
Xinhua Geng ◽  
Friedhelm Finger
Keyword(s):  
Solar Cells ◽  
High Efficiency ◽  
Chemical Vapor ◽  
Microcrystalline Silicon ◽  
Very High Frequency ◽  
Deposition Rates ◽  
Glass Substrates ◽  
High Efficiency Solar Cells ◽  
High Frequency Plasma ◽  
Frequency Plasma

AbstractIntrinsic microcrystalline silicon (μc-Si:H ) was prepared at high deposition rates (RD) by very high frequency plasma-enhanced chemical vapor deposition (PECVD) working at high-pressure high-power (hphP). The material has similar electrical and optical properties as μc-Si:H material deposited at low rates by low-pressure low-power PECVD, apart from a more pronounced structure in-homogeneity along the growth axis for material deposited on glass substrates. With optimized deposition conditions high efficiency solar cells can be grown with deposition rates of up to 15 Å/s without deterioration of the performance as a function of RD. A high conversion efficiency of 9.8 % was obtained for a single junction μc-Si:H p-i-n solar cell at a deposition rate of RD = 11 Å/s.

Enhanced up-converted fluorescence in fluorozirconate based glass ceramics for high efficiency solar cells

2008 ◽  
Author(s):  
Bernd Ahrens ◽  
Bastian Henke ◽  
Paul T. Miclea ◽  
Jacqueline A. Johnson ◽  
Stefan Schweizer
Keyword(s):  
Solar Cells ◽  
High Efficiency ◽  
Glass Ceramics ◽  
High Efficiency Solar Cells

scholarly journals Design of Grating Al2O3 Passivation Structure Optimized for High-Efficiency Cu(In,Ga)Se2 Solar Cells

Sensors ◽  
2021 ◽  
Vol 21 (14) ◽  
pp. 4849
Author(s):  
Chan Hyeon Park ◽  
Jun Yong Kim ◽  
Shi-Joon Sung ◽  
Dae-Hwan Kim ◽  
Yun Seon Do
Keyword(s):  
Solar Cells ◽  
High Efficiency ◽  
Surface Passivation ◽  
Rear Surface ◽  
Maximum Efficiency ◽  
Structural Factors ◽  
Carrier Recombination ◽  
Cigs Solar Cells ◽  
Effective Carrier ◽  
Opening Width

In this paper, we propose an optimized structure of thin Cu(In,Ga)Se2 (CIGS) solar cells with a grating aluminum oxide (Al2O3) passivation layer (GAPL) providing nano-sized contact openings in order to improve power conversion efficiency using optoelectrical simulations. Al2O3 is used as a rear surface passivation material to reduce carrier recombination and improve reflectivity at a rear surface for high efficiency in thin CIGS solar cells. To realize high efficiency for thin CIGS solar cells, the optimized structure was designed by manipulating two structural factors: the contact opening width (COW) and the pitch of the GAPL. Compared with an unpassivated thin CIGS solar cell, the efficiency was improved up to 20.38% when the pitch of the GAPL was 7.5–12.5 μm. Furthermore, the efficiency was improved as the COW of the GAPL was decreased. The maximum efficiency value occurred when the COW was 100 nm because of the effective carrier recombination inhibition and high reflectivity of the Al2O3 insulator passivation with local contacts. These results indicate that the designed structure has optimized structural points for high-efficiency thin CIGS solar cells. Therefore, the photovoltaic (PV) generator and sensor designers can achieve the higher performance of photosensitive thin CIGS solar cells by considering these results.

scholarly journals Improving Performance of CIGS Solar Cells by Annealing ITO Thin Films Electrodes

2015 ◽  
Vol 2015 ◽  
pp. 1-8 ◽  
Author(s):  
Chuan Lung Chuang ◽  
Ming Wei Chang ◽  
Nien Po Chen ◽  
Chung Chiang Pan ◽  
Chung Ping Liu
Keyword(s):  
Thin Films ◽  
Optical Properties ◽  
Solar Cells ◽  
Indium Tin Oxide ◽  
Copper Indium Gallium Diselenide ◽  
Glass Substrates ◽  
Ito Film ◽  
Ito Thin Films ◽  
Cigs Solar Cells ◽  
Ito Films

Indium tin oxide (ITO) thin films were grown on glass substrates by direct current (DC) reactive magnetron sputtering at room temperature. Annealing at the optimal temperature can considerably improve the composition, structure, optical properties, and electrical properties of the ITO film. An ITO sample with a favorable crystalline structure was obtained by annealing in fixed oxygen/argon ratio of 0.03 at 400°C for 30 min. The carrier concentration, mobility, resistivity, band gap, transmission in the visible-light region, and transmission in the near-IR regions of the ITO sample were-1.6E+20 cm−3,2.7E+01 cm2/Vs,1.4E-03 Ohm-cm, 3.2 eV, 89.1%, and 94.7%, respectively. Thus, annealing improved the average transmissions (400–1200 nm) of the ITO film by 16.36%. Moreover, annealing a copper-indium-gallium-diselenide (CIGS) solar cell at 400°C for 30 min in air improved its efficiency by 18.75%. The characteristics of annealing ITO films importantly affect the structural, morphological, electrical, and optical properties of ITO films that are used in solar cells.

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