scholarly journals Growth and Characterization ofCd1−XZnXTe-Sintered Films

2007 ◽  
Vol 2007 ◽  
pp. 1-5 ◽  
Author(s):  
V. Kumar ◽  
G. S. Sandhu ◽  
T. P. Sharma ◽  
M. Hussain
Keyword(s):  
High Efficiency ◽  
Hexagonal Structure ◽  
X Ray Diffraction ◽  
Glass Substrates ◽  
High Efficiency Solar Cells ◽  
Vegard’S Law ◽  
Double Beam ◽  
Ternary Semiconductor ◽  
Diffraction Patterns ◽  
The Cost

The II-VI polycrystalline semiconducting materials have come under increased scrutiny because of their wide use in the cost reduction of devices for photovoltaic applications.Cd1−XZnXTe is one of the II-VI ternary semiconductor materials whose bandgap can be tailored to any value between 1.48–2.26 eV as X varies from 0 to 1. It is promising material for high-efficiency solar cells, switching, and other optoelectronic devices. Polycrystalline thin film ofCd1−XZnXTe with variable composition (0≤X≤1) has been deposited on ultraclean glass substrates by screen printing method followed by sintering process. The optical and structural properties ofCd1−XZnXTe thin films have been examined. The optical bandgap of these films is studied using reflection spectra in wavelength range of 350–900 nm by using double beam spectrophotometer. The structure of sample was determined from X-ray diffraction patterns. The films were polycrystalline in nature having wurtzite (Hexagonal) structure over the whole range studied. The lattice parameters vary almost linearly with the composition parameterX, following Vegard's law. Sintering is a very simple and viable method compared to other cost-intensive methods. The results of the present investigation will be useful in characterizing the material CdZnTe for its applications in photovoltaics.

Electrochemical Deposition and Characterization of Cd-Fe-Se Thin Films

2009 ◽  
Vol 68 ◽  
pp. 69-76 ◽  
Author(s):  
S. Thanikaikarasan ◽  
T. Mahalingam ◽  
K. Sundaram ◽  
Tae Kyu Kim ◽  
Yong Deak Kim ◽  
...  
Keyword(s):  
Thin Films ◽  
Hexagonal Structure ◽  
X Rays ◽  
X Ray Diffraction ◽  
X Ray ◽  
Iron Selenide ◽  
Glass Substrates ◽  
Diffraction Patterns ◽  
Cadmium Iron Selenide ◽  
Deposited Films

Cadmium iron selenide (Cd-Fe-Se) thin films were deposited onto tin oxide (SnO2) coated conducting glass substrates from an aqueous electrolytic bath containing CdSO4, FeSO4 and SeO2 by potentiostatic electrodeposition. The deposition potentials of Cadmium (Cd), Iron (Fe), Selenium (Se) and Cadmium-Iron-Selenide (Cd-Fe-Se) were determined from linear cathodic polarization curves. The deposited films were characterized by x-ray diffraction (XRD), scanning electron microscope (SEM), energy dispersive analysis by x-rays (EDX) and optical absorption techniques, respectively. X-ray diffraction patterns shows that the deposited films are found to be hexagonal structure with preferential orientation along (100) plane. The effect of FeSO4 concentration on structural, morphological, compositional and optical properties of the films are studied and discussed in detail.

scholarly journals Optical, structural and electrical properties of nanosized zinc oxide sintered films for photovoltaic applications

2013 ◽  
Vol 45 (1) ◽  
pp. 13-19 ◽  
Author(s):  
V. Kumar ◽  
D.K. Dwivedi ◽  
P. Agrawal
Keyword(s):  
Zinc Oxide ◽  
Hexagonal Structure ◽  
Sintering Process ◽  
X Ray Diffraction ◽  
Glass Substrates ◽  
Zinc Oxide Films ◽  
Double Beam ◽  
Structural And Electrical Properties ◽  
Nanosized Zinc Oxide ◽  
Photovoltaic Applications

Zinc oxide films have been deposited on ultra-clean glass substrates by screenprinting method followed by sintering process. Optimum conditions for preparing good quality screen-printed films have been found. The optical band gap of the films has been studied using reflection spectra in wavelength range 325-600 nm by using double beam spectrophotometer. X-ray diffraction studies revealed that the films are polycrystalline in nature, single phase exhibiting wurtzite (hexagonal) structure with strong preferential orientation of grains along the (101) direction. Surface morphology of films has been studied by scanning electron microscopy (SEM) technique. The electrical resistivity of the films was measured in vacuum by two probe technique. PACS: 78.20.Ci; 78.50.Ge; 78.66.-w; 78.66.Hf.

scholarly journals Materials Characterization of CIGS solar cells on Top of CMOS chips

2011 ◽  
Vol 1325 ◽  
Author(s):  
J. Lu ◽  
W. Liu ◽  
A. Y. Kovalgin ◽  
Y. Sun ◽  
J. Schmitz
Keyword(s):  
Solar Cells ◽  
High Efficiency ◽  
Diffraction Measurement ◽  
X Ray Diffraction ◽  
Glass Substrates ◽  
Standard Glass ◽  
High Efficiency Solar Cells ◽  
Helium Ion ◽  
Cigs Solar Cells ◽  
Two Peaks

ABSTRACTIn the current work, we present a detailed study on the material properties of the CIGS layers, fabricated on top of the CMOS chips, and compare the results with the fabrication on standard glass substrates. Almost identical elemental composition on both glass and CMOS chips (within measurement error). From X-ray diffraction measurement, except two peaks from the Si <100> substrate, the diffraction peaks from CIGS solar cell CMOS chip and that on glass substrate coincide for all three temperatures. Helium ion microscope images of the cross-section and top view of the CIGS layers, shows that the grain size is suitable for high efficiency solar cells.

XRD Investigations on Film Thickness and Substrate Temperature Effects of DC Magnetron Sputtered ZnO Films

2013 ◽  
Vol 845 ◽  
pp. 241-245
Author(s):  
Jian Wei Hoon ◽  
Kah Yoong Chan ◽  
Cheng Yang Low
Keyword(s):  
Film Thickness ◽  
Substrate Temperature ◽  
Zno Films ◽  
X Ray Diffraction ◽  
Glass Substrates ◽  
Direct Current Plasma ◽  
Crystallite Sizes ◽  
Magnetron Sputter Deposition ◽  
Magnetron Sputter ◽  
Diffraction Patterns

In this paper, direct current plasma magnetron sputter deposition technique was employed to deposit zinc oxide (ZnO) films on glass substrates. The magnetron sputtering process parameters including film thickness and substrate temperature were investigated. The crystallite sizes of the ZnO films were extracted from the measured X-ray diffraction patterns. The correlation of the crystallite size of the ZnO films with the film thickness and the substrate temperature will be discussed in this paper.

The X-Ray Powder Diffraction Patterns and Crystal Structure for Al2M3Y(M=Cu, Ni)

2014 ◽  
Vol 950 ◽  
pp. 48-52
Author(s):  
De Gui Li ◽  
Ming Qin ◽  
Liu Qing Liang ◽  
Zhao Lu ◽  
Shu Hui Liu ◽  
...  
Keyword(s):  
Crystal Structure ◽  
Powder Diffraction ◽  
Diffraction Data ◽  
Hexagonal Structure ◽  
Argon Atmosphere ◽  
X Ray Diffraction ◽  
High Quality ◽  
X Ray ◽  
Arc Melting ◽  
Diffraction Patterns

The Al2M3Y(M=Cu, Ni) compound was synthesized by arc melting under argon atmosphere. The high-quality powder X-ray diffraction data of Al2M3Y have been presented. The refinement of the X-ray diffraction patterns for the Al2M3Y compound show that the Al2M3Y has hexagonal structure, space groupP6/mmm(No.191), with a = b = 5.1618(2) Å, c = 4.1434(1) Å,V= 95.6 Å3,Z= 1,ڑx= 5.7922 g/cm3,F30= 155.5(0.0057, 34), RIR = 2.31 for Al2Cu3Y, and with a = b = 5.0399(1) Å, c = 4.0726(1) Å,V= 89.59 Å3,Z= 1,ڑx= 5.9118 g/cm3,F30= 135.7(0.0072, 30), RIR = 2.54 for Al2Ni3Y.

Influence of the Distance between Target and Substrate on the Properties of TGZO Films Prepared by DC Magnetron Sputtering

2010 ◽  
Vol 663-665 ◽  
pp. 572-575 ◽  
Author(s):  
Han Fa Liu ◽  
Hua Fu Zhang ◽  
Ai Ping Zhou
Keyword(s):  
Electrical Resistivity ◽  
Magnetron Sputtering ◽  
Visible Region ◽  
Hexagonal Structure ◽  
X Ray Diffraction ◽  
Dc Magnetron Sputtering ◽  
Glass Substrates ◽  
Average Transmittance ◽  
Xrd Patterns ◽  
Deposited Films

Ti-Ga co-doped ZnO thin films (TGZO) have been successfully prepared on glass substrates by DC magnetron sputtering at room temperature. The X-ray diffraction (XRD) patterns show that all the deposited films are polycrystalline with a hexagonal structure and have a preferred orientation along the c-axis perpendicular to the substrate. The distance between target and substrate was varied from 41 to 75 mm. The crystallinity increases obviously and the electrical resistivity decreases when the distance between target and substrate decreases from 75 to 46 mm. However, as the distance decreases further, the electrical resistivity increases. It is obtained that the lowest resistivity is 2.0610-4cm when the distance between target and substrate is 46 mm. In the visible region, the TGZO films show a high average transmittance of above 90 %.

Influence of Sputtering Power on Molybdenum-Doped Zinc Oxide Films Grown by RF Magnetron Sputtering

2013 ◽  
Vol 873 ◽  
pp. 426-430
Author(s):  
Xian Wu Xiu ◽  
Li Xu ◽  
Cheng Qiang Zhang
Keyword(s):  
Zinc Oxide ◽  
Magnetron Sputtering ◽  
Rf Magnetron Sputtering ◽  
Xrd Analysis ◽  
Hexagonal Structure ◽  
Visible Range ◽  
Rf Power ◽  
X Ray Diffraction ◽  
Glass Substrates ◽  
Sputtering Power

Molybdenum-doped zinc oxide (MZO) films have been prepared by RF magnetron sputtering on glass substrates at room temperature. The structural, electrical and optical properties of the films vary with sputtering power from 15 W to 70 W are investigated. X-ray diffraction (XRD) analysis reveals that all the films are polycrystalline with the hexagonal structure and have a preferred orientation along thecaxis perpendicular to the substrate. The resistivity increases with the increase of the RF power. The lowest resistivity achieved is 5.4×10-3Ω cm at a RF power of 15 W with a Hall mobility of 11 cm2V-1s-1and a carrier concentration of 1.1×1019cm-3. The average transmittance drops from 85% to 81% in the visible range and the optical band gap decreases from 3.26 eV to 3.19 eV with the increase of the RF power.

STUDY OF CHEMICAL BATH DEPOSITION OF ZnS THIN FILMS WITH SUBSTRATE VIBRATION

2008 ◽  
Vol 15 (06) ◽  
pp. 821-827 ◽  
Author(s):  
Z. Q. BIAN ◽  
X. B. XU ◽  
J. B. CHU ◽  
Z. SUN ◽  
Y. W. CHEN ◽  
...  
Keyword(s):  
Thin Films ◽  
Hydrazine Hydrate ◽  
Chemical Bath Deposition ◽  
Visible Region ◽  
Hexagonal Structure ◽  
Complexing Agents ◽  
X Ray Diffraction ◽  
Glass Substrates ◽  
Alkaline Conditions ◽  
Zns Films

An improved chemical bath deposition (CBD) technique has been provided to prepare zinc sulfide ( ZnS ) thin films on glass substrates deposited at 80–82°C using a mixed aqueous solution of zinc sulfate, ammonium sulfate, thiourea, hydrazine hydrate, and ammonia at the alkaline conditions. Both the traditional magnetic agitation and the substrates vibration by hand frequently were done simultaneously during the deposition. The substrates vibration reduced the formation and residence of gas bubbles on the glass substrates during growth and resulted in growth of clean ZnS thin films with high quality. Ammonia and hydrazine hydrate were used as complexing agents. It is found that hydrazine hydrate played an important role in growth of ZnS films. The structure and microstructure of ZnS films were characterized by scanning electron microscopy (SEM), X-ray diffraction (XRD) and UV-vis spectroscopic methods. The XRD showed a hexagonal structure. The formed ZnS films exhibited good optical properties with high transmittance in the visible region and the band gap value was estimated to be 3.5–3.70 eV.

scholarly journals Effect of Aqueous Solution Molarity on the Structural and Electrical Properties of Spray Pyrolysed Lead Sulfide (PbS) Thin Films

2015 ◽  
Vol 57 ◽  
pp. 122-125 ◽  
Author(s):  
Mohammad Ghaffar Faraj
Keyword(s):  
Thin Films ◽  
Grain Size ◽  
Lead Sulfide ◽  
Chemical Spray Pyrolysis ◽  
Face Centered Cubic ◽  
X Ray Diffraction ◽  
X Ray ◽  
Glass Substrates ◽  
Diffraction Patterns ◽  
Scherrer Formula

Lead sulfide (PbS) thin films of different molarities (0.05 M, 0.075 M and 0.1 M) were prepared on glass substrates at 325 °C by chemical spray pyrolysis (CSP) technique. X-ray diffraction patterns confirm the proper phase formation of the PbS. The X-ray diffraction patterns’ results reveal that the all of PbS films have a face centered cubic structure with preferential reflection of (200) plane. The crystallite grain size was calculated using Scherrer formula and it is found that the 0.1M has maximum crystallite grain size (37.4 nm). Depending on the molarity, Hall measurement showed that the electrical resistivity and mobility at room temperature varied in the range 6.3x103Ω.cm to 2.1x103Ω.cm and 4.79cm2/V.S to 24.3 cm2/V.S.

Characterization of MnS Thin Films Deposited by Chemical Bath Deposition

2019 ◽  
Vol 969 ◽  
pp. 433-438 ◽  
Author(s):  
Dattatraya K. Sonavane ◽  
S.K. Jare ◽  
M.A. Shaikh ◽  
R.V. Kathare ◽  
R.N. Bulakhe
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Band Gap ◽  
Chemical Bath Deposition ◽  
Band Gap Energy ◽  
Sulfur Source ◽  
X Ray Diffraction ◽  
Glass Substrates ◽  
Double Beam

Glass substrates are used to deposit thin films utilizing basic and value effective chemical bath deposition (CBD) technique. The films were prepared from the mixture as solutions of manganous acetate tetrahydrate [C4H6MnO44H2O] as a manganese source, thiourea [(H2 N) 2 CS] as a sulfur source and triethanolamine (TEA) [(HOC2H4)3N] as a complexing agent.In the present paper the deposition was successfully done at 60 °C temperature. The absorption properties and band gap energy were determined employing double beam spectrophotometer. The optical band gap value calculated from absorption spectra of MnS thin film is found to be about 3.1eV.The MnS thin film was structurally characterized by X-ray Diffraction (XRD). The MnS thin film was morphologically characterized by Scanning Electron Microscopy (SEM) and elemental analysis was performed using EDS to confirm the formation of MnS.

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