Low-damage Preparation of SiO2 Dielectric Thin Film by the Photo-assisted Oxidation Processing
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ABSTRACTWe have already reported that low-temperature (about 170 °C) preparation technique of silicon dioxide (SiO2) dielectric thin film that has high resistivity and extremely smooth surface by the photo oxidation process. In this paper, we have developed a low-damage preparation technique to fabricate a SiO2 thin film by the photo-assisted low temperature oxidation process in order to apply this process to the flexible electronics using for convenient plastic films. We have reported that the SiO2 dielectric thin film with a high insulation performance can be prepared by the low temperature processing below 100°C by improving the pre-processing of the photo oxidation of thin film.
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2010 ◽
Vol 13
(9)
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pp. H313
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2018 ◽
Vol 6
(48)
◽
pp. 13359-13366
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2010 ◽
Vol 157
(10)
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pp. H909
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