Low-damage Preparation of SiO2 Dielectric Thin Film by the Photo-assisted Oxidation Processing

2011 ◽  
Vol 1287 ◽  
Author(s):  
Takehito Kodzasa ◽  
Sei Uemura ◽  
Kouji Suemori ◽  
Manabu Yoshida ◽  
Satoshi Hoshino ◽  
...  

ABSTRACTWe have already reported that low-temperature (about 170 °C) preparation technique of silicon dioxide (SiO2) dielectric thin film that has high resistivity and extremely smooth surface by the photo oxidation process. In this paper, we have developed a low-damage preparation technique to fabricate a SiO2 thin film by the photo-assisted low temperature oxidation process in order to apply this process to the flexible electronics using for convenient plastic films. We have reported that the SiO2 dielectric thin film with a high insulation performance can be prepared by the low temperature processing below 100°C by improving the pre-processing of the photo oxidation of thin film.

2009 ◽  
Vol 1196 ◽  
Author(s):  
Takehito Kodzasa ◽  
Sei Uemura ◽  
Kouji Suemori ◽  
Manabu Yoshida ◽  
Satoshi Hoshino ◽  
...  

AbstractIt is mostly important to develop the fabrication technology of the dielectric thin film with high insulation performance and surface flatness by large-area printing process. We have developed a technique to fabricate a silicon dioxide (SiO2) dielectric thin film by the low temperature solution process. The thin film prepared by about 170°C showed excellent dielectric performance with high resistivity in the order of 10 to the 16 Ωcm and surface flatness with the same degree of thermal oxidized SiO2 thin film on the silicon wafer (RMS=0.15nm). In addition, it is showed that the production of thick film of SiO2 with high dielectric performance and surface flatness is possible by applying over-coating technique. These indicate that this SiO2 production technique is greatly useful for the large-area printed electronics technology.


2010 ◽  
Vol 13 (9) ◽  
pp. H313 ◽  
Author(s):  
A. L. Salas-Villasenor ◽  
I. Mejia ◽  
J. Hovarth ◽  
H. N. Alshareef ◽  
D. K. Cha ◽  
...  

2018 ◽  
Vol 6 (48) ◽  
pp. 13359-13366 ◽  
Author(s):  
Joo-Young Kim ◽  
Ji Whan Kim ◽  
Eun Kyung Lee ◽  
Jeong-Il Park ◽  
Bang-Lin Lee ◽  
...  

This paper reports a polymeric gate insulating material of poly(hydroxy imide) cured at the low temperature of 130 °C for the application to organic thin-film transistors on plastic substrates exhibiting high breakdown voltage and no hysteresis.


1998 ◽  
Vol 73 (14) ◽  
pp. 1958-1960 ◽  
Author(s):  
Yongfei Zhu ◽  
Jinsong Zhu ◽  
Yoon J. Song ◽  
S. B. Desu

Fuel ◽  
2018 ◽  
Vol 222 ◽  
pp. 350-361 ◽  
Author(s):  
Lanjun Zhang ◽  
Zenghua Li ◽  
Wenjing He ◽  
Jinhu Li ◽  
Xuyao Qi ◽  
...  

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