Displacement Current Measurement of MIS Devices with Ionic Liquids to Explore Carrier Behaviors in Model Interfaces of Organic Devices

2011 ◽  
Vol 1286 ◽  
Author(s):  
Taiki Yamada ◽  
Yutaka Noguchi ◽  
Yukio Ouchi ◽  
Hisao Ishii
Keyword(s):  
Ionic Liquids ◽  
Charge Injection ◽  
Current Measurement ◽  
Hole Injection ◽  
Displacement Current ◽  
Organic Layer ◽  
Organic Thin Film ◽  
Mis Devices ◽  
Device Operation ◽  
Injection Property

ABSTRACTCharge injection property of organic thin film devices is a key issue to understand the device operation. Displacement current measurement (DCM) is a powerful technique to probe the charge injection behaviors in terms of a change in the apparent capacitance of test devices. However, it requires to suppress actual current flowing through the device for investigating the details of interface phenomena. We propose here the use of ionic liquids (ILs) as a top contact insulator in organic metal-insulator-semiconductor (MIS) structures. Because of the high stability and dielectric constant of the ILs, the external applied voltage was applied mainly to the organic layer with suppressing the actual current. The DCM curves of Pt wire/IL/α-NPD/ITO structure were measured, and they actually show the signals due to the hole injection from theITO to α-NPD layer and accumulation at the IL/α-NPD.

scholarly journals Carrier injection property of C60thin film transistor via displacement current measurement

2009 ◽  
Vol 159 ◽  
pp. 012014
Author(s):  
N Aoki ◽  
Y Chiba ◽  
S-R Chen ◽  
H Tsuji ◽  
M Ueno ◽  
...  
Keyword(s):  
Current Measurement ◽  
Displacement Current ◽  
Carrier Injection ◽  
Injection Property

Effective performance improvement of organic thin film transistors with multi-layer modifications

2020 ◽  
Vol 91 (3) ◽  
pp. 30201
Author(s):  
Hang Yu ◽  
Jianlin Zhou ◽  
Yuanyuan Hao ◽  
Yao Ni
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Performance Enhancement ◽  
Organic Thin Film Transistors ◽  
Electrical Performance ◽  
Hole Injection ◽  
Organic Thin Film ◽  
Effective Performance ◽  
Significant Performance ◽  
P Type

Organic thin film transistors (OTFTs) based on dioctylbenzothienobenzothiophene (C8BTBT) and copper (Cu) electrodes were fabricated. For improving the electrical performance of the original devices, the different modifications were attempted to insert in three different positions including semiconductor/electrode interface, semiconductor bulk inside and semiconductor/insulator interface. In detail, 4,4′,4′′-tris[3-methylpheny(phenyl)amino] triphenylamine (m-MTDATA) was applied between C8BTBTand Cu electrodes as hole injection layer (HIL). Moreover, the fluorinated copper phthalo-cyanine (F16CuPc) was inserted in C8BTBT/SiO2 interface to form F16CuPc/C8BTBT heterojunction or C8BTBT bulk to form C8BTBT/F16CuPc/C8BTBT sandwich configuration. Our experiment shows that, the sandwich structured OTFTs have a significant performance enhancement when appropriate thickness modification is chosen, comparing with original C8BTBT devices. Then, even the low work function metal Cu was applied, a normal p-type operate-mode C8BTBT-OTFT with mobility as high as 2.56 cm2/Vs has been fabricated.

scholarly journals Large Area Emission in p-Type Polymer-Based Light-Emitting Field-Effect Transistors by Incorporating Charge Injection Interlayers

Materials ◽  
2021 ◽  
Vol 14 (4) ◽  
pp. 901
Author(s):  
Gizem Acar ◽  
Muhammad Javaid Iqbal ◽  
Mujeeb Ullah Chaudhry
Keyword(s):  
Field Effect ◽  
Field Effect Transistors ◽  
Charge Injection ◽  
Limiting Factors ◽  
Hole Injection ◽  
Large Area ◽  
Device Structure ◽  
Light Emitting ◽  
Emission Area ◽  
P Type

Organic light-emitting field-effect transistors (LEFETs) provide the possibility of simplifying the display pixilation design as they integrate the drive-transistor and the light emission in a single architecture. However, in p-type LEFETs, simultaneously achieving higher external quantum efficiency (EQE) at higher brightness, larger and stable emission area, and high switching speed are the limiting factors for to realise their applications. Herein, we present a p-type polymer heterostructure-based LEFET architecture with electron and hole injection interlayers to improve the charge injection into the light-emitting layer, which leads to better recombination. This device structure provides access to hole mobility of ~2.1 cm2 V−1 s−1 and EQE of 1.6% at a luminance of 2600 cd m−2. Most importantly, we observed a large area emission under the entire drain electrode, which was spatially stable (emission area is not dependent on the gate voltage and current density). These results show an important advancement in polymer-based LEFET technology toward realizing new digital display applications.

Enhancement of Charge Injection in an Organic Thin-Film Transistor with a Metal-Oxide Multilayer Electrode

2017 ◽  
Vol 67 (1) ◽  
pp. 24-29
Author(s):  
YeongHun JEONG ◽  
Hyeonwook JANG ◽  
Hyeji HAN ◽  
Sunghoon JEON ◽  
Shant ARAKELYAN ◽  
...  
Keyword(s):  
Thin Film ◽  
Metal Oxide ◽  
Thin Film Transistor ◽  
Charge Injection ◽  
Organic Thin Film ◽  
Organic Thin Film Transistor ◽  
Multilayer Electrode

scholarly journals Electro-Optical Performance of Organic Thin-Film Using HAT(CN)6 between Anode and Organic Materials

Coatings ◽  
2019 ◽  
Vol 9 (10) ◽  
pp. 648 ◽  
Author(s):  
Hong-Gyu Park ◽  
Sang-Geon Park
Keyword(s):  
Thin Film ◽  
Optical Properties ◽  
Current Density ◽  
Carrier Transport ◽  
Hole Injection ◽  
Driving Voltage ◽  
Organic Thin Film ◽  
20 Nm ◽  
Injection Barrier ◽  
A Current

We report the electro-optical properties of an organic thin-film by varying the thickness of 1,4,5,8,9,11-hexaazatriphenylene-hexacarbonitrile (HAT(CN)6), included therein as an interlayer. Devices with HAT(CN)6, which are 7 nm thin films used as interlayers, exhibited good current density–voltage characteristics due to an improved hole injection barrier resulting from carrier ladder effects and carrier transport phenomena. The device without an interlayer showed the worst driving voltage characteristics due to the hole injection barrier. At low driving voltages, a device using 7 nm HAT(CN)6 as an interlayer exhibited a current density about 9.9 times higher than that of a device using 20 nm HAT(CN)6, and showed a current density about 9600 times higher than that of a device without an interlayer. Due to the proper carrier balance, the device using 7 nm HAT(CN)6 as an interlayer achieved a maximum current efficiency of 10.8 cd/A, which was the highest among the devices studied. This shows that the electro-optical properties of devices using HAT(CN)6 as an interlayer are dominated by the holes.

All-inorganic Light Emitting Devices Based on Semiconducting Nanoparticles

2010 ◽  
Vol 1260 ◽  
Author(s):  
Ekaterina Neshataeva ◽  
Tilmar Kümmell ◽  
André Ebbers ◽  
Gerd Bacher
Keyword(s):  
Spectral Range ◽  
Zno Nanoparticles ◽  
Hole Injection ◽  
Light Emitting ◽  
Light Emitting Devices ◽  
Layer Sequence ◽  
Current Densities ◽  
The Stability ◽  
P Type ◽  
Device Operation

AbstractWe demonstrate light emitting devices based on ZnO nanoparticles and realized without any additional organic support layers. Pure ZnO devices showed electroluminescence in the visible and the UV spectral range at voltages below 10 V. In order to facilitate hole injection and to stabilize device operation, additional p-type inorganic support layers were introduced. Sputtered NiO layers are shown to improve the stability of the device and its I/V behavior. First bilayer devices consisting of a layer sequence of p-doped Si and naturally n-doped ZnO nanoparticles revealed promising electro-luminescence results with a high contribution in the UV spectral range at reduced current densities.

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