Connecting Electrical and Molecular Properties of Semiconducting Polymers for Thin-Film Transistors

MRS Bulletin ◽  
2008 ◽  
Vol 33 (7) ◽  
pp. 683-689 ◽  
Author(s):  
Michael L. Chabinyc ◽  
Leslie H. Jimison ◽  
Jonathan Rivnay ◽  
Alberto Salleo

AbstractAn overview of recent work on the connection between electrical and molecular properties of semiconducting polymers for thin-film transistors (TFTs) is presented. A description of the molecular packing and microstructure of amorphous to semicrystalline semiconducting polymers is presented. The features of basic models for electrical transport in TFTs are discussed. These studies indicate that defect states and traps are as important as ordered domains for understanding transport in semiconducting polymers. Advanced methods, such as electric force microscopy, useful for measuring the characteristics of defect states and charge traps, are briefly reviewed.

1997 ◽  
Vol 36 (Part 1, No. 10) ◽  
pp. 6226-6229 ◽  
Author(s):  
Huang-Chung Cheng ◽  
Jun-Wei Tsai ◽  
Chun-Yao Huang ◽  
Fang-Chen Luo ◽  
Hsing-Chien Tuan

2021 ◽  
Vol 92 (2) ◽  
pp. 023703
Author(s):  
Khaled Kaja ◽  
Denis Mariolle ◽  
Nicolas Chevalier ◽  
Adnan Naja ◽  
Mustapha Jouiad

2010 ◽  
Vol 21 (22) ◽  
pp. 225702 ◽  
Author(s):  
Minhua Zhao ◽  
Xiaohong Gu ◽  
Sharon E Lowther ◽  
Cheol Park ◽  
Y C Jean ◽  
...  

2004 ◽  
Vol 84 (16) ◽  
pp. 3070-3072 ◽  
Author(s):  
Sang-Jun Cho ◽  
Seydi Doğan ◽  
Shahriar Sabuktagin ◽  
Michael A. Reshchikov ◽  
Daniel K. Johnstone ◽  
...  

1996 ◽  
Vol 424 ◽  
Author(s):  
Jeong Hyun Kim ◽  
Woong Sik Choi ◽  
Chan Hee Hong ◽  
Hoe Sup Soh

AbstractThe off current behavior of hydrogenated amorphous silicon (a-Si:H) thin film transistors (TFTs) with an atmospheric pressure chemical vapor deposition (APCVD) silicon dioxide (SiO2) gate insulator were investigated at negative gate voltages. The a-Si:H TFT with SiO2 gate insulator has small off currents and large activation energy (Ea) of the off current compared to the a-Si:H TFT with SiNx gate insulator. The holes induced in the channel by negative gate voltage seem to be trapped in the defect states near the a-Si:H/SiO2 interface. The interface state density in the lower half of the band gap of a-Si:H/SiO2 appears to be much higher than that for a-Si:H/SiNx.


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