Scanning Probe Microscopy Measurements of Friction

MRS Bulletin ◽  
2004 ◽  
Vol 29 (7) ◽  
pp. 478-483 ◽  
Author(s):  
Scott S. Perry
Keyword(s):  
Scanning Probe Microscopy ◽  
Sliding Contact ◽  
Scanning Probe ◽  
Interfacial Friction ◽  
Probe Microscopy ◽  
Frictional Properties ◽  
Single Asperity ◽  
Friction Measurements ◽  
Detection Schemes ◽  
Tribological Contact

AbstractThis article describes the details of scanning probe microscopy measurements of interfacial friction from an experimental perspective. In such studies, the probe tip is taken as a model of a single asperity within a tribological contact, and interfacial forces are measured as a function of the sliding contact of the probe tip with the surface. With appropriate detection schemes, friction and load forces can be monitored simultaneously and used together to describe the frictional properties of the microscopic contact. This article provides a detailed description of the procedures and protocols of friction measurements performed with scanning probe microscopy, the relevant properties of probe tips, and the influence of environment on microscopic friction measurements. In addition, the article provides a brief overview of several categories of friction studies performed with scanning probe microscopy, highlighting the type of materials characterized in these studies as well as the importance and impact of the microscopic measurements.

Measurements of In-Plane Material Properties with Scanning Probe Microscopy

MRS Bulletin ◽  
2004 ◽  
Vol 29 (7) ◽  
pp. 472-477 ◽  
Author(s):  
Robert W. Carpick ◽  
Mark A. Eriksson
Keyword(s):  
Scanning Probe Microscopy ◽  
Material Properties ◽  
Lateral Displacement ◽  
Atomic Scale ◽  
Scanning Probe ◽  
Structural Anisotropy ◽  
Probe Microscopy ◽  
Parallel Motion ◽  
Intermittent Contact ◽  
Friction Measurements

AbstractScanning probe microscopy (SPM) was originally conceived as a method for measuring atomic-scale surface topography. Over the last two decades, it has blossomed into an array of techniques that can be used to obtain a rich variety of information about nanoscale material properties. With the exception of friction measurements, these techniques have traditionally depended on tip—sample interactions directed normal to the sample's surface. Recently, researchers have explored several effects arising from interactions parallel to surfaces, usually by deliberately applying a modulated lateral displacement. In fact, some parallel motion is ubiquitous to cantilever-based SPM, due to the tilt of the cantilever. Recent studies, performed in contact, noncontact, and intermittent-contact modes, provide new insights into properties such as structural anisotropy, lateral interactions with surface features, nanoscale shear stress and contact mechanics, and in-plane energy dissipation. The understanding gained from interpreting this behavior has consequences for all cantilever-based scanning probe microscopies.

The Role of Scanning Probe Microscopy in Drug Delivery Research

1996 ◽  
Vol 13 (3-4) ◽  
pp. 225-256 ◽  
Author(s):  
Kevin M. Shakesheff ◽  
Martyn C. Davies ◽  
Clive J. Roberts ◽  
Saul J. B. Tendler ◽  
Philip M. Williams
Keyword(s):  
Drug Delivery ◽  
Scanning Probe Microscopy ◽  
Scanning Probe ◽  
Probe Microscopy

Extending Electrical Scanning Probe Microscopy Measurements of Semiconductor Devices Using Microwave Impedance Microscopy

2015 ◽  
Author(s):  
Benedict Drevniok ◽  
St. John Dixon-Warren ◽  
Oskar Amster ◽  
Stuart L Friedman ◽  
Yongliang Yang
Keyword(s):  
Scanning Probe Microscopy ◽  
Semiconductor Devices ◽  
Cmos Image Sensor ◽  
Image Sensor ◽  
Scanning Probe ◽  
Cross Sectional ◽  
Probe Microscopy ◽  
Dopant Profiling ◽  
Capacitance Voltage

Abstract Scanning microwave impedance microscopy was used to analyze a CMOS image sensor sample to reveal details of the dopant profiling in planar and cross-sectional samples. Sitespecific capacitance-voltage spectroscopy was performed on different regions of the samples.

Cross-Section Sample Preparation Method for Imaging Dopant Related Anomalies Using Scanning Probe Microscopy Techniques

2014 ◽  
Author(s):  
Swaminathan Subramanian ◽  
Khiem Ly ◽  
Tony Chrastecky
Keyword(s):  
Sample Preparation ◽  
Failure Analysis ◽  
Cross Section ◽  
Scanning Probe Microscopy ◽  
Preparation Method ◽  
Fault Isolation ◽  
Scanning Probe ◽  
Sample Preparation Method ◽  
Probe Microscopy ◽  
Section Sample

Abstract Visualization of dopant related anomalies in integrated circuits is extremely challenging. Cleaving of the die may not be possible in practical failure analysis situations that require extensive electrical fault isolation, where the failing die can be submitted of scanning probe microscopy analysis in various states such as partially depackaged die, backside thinned die, and so on. In advanced technologies, the circuit orientation in the wafer may not align with preferred crystallographic direction for cleaving the silicon or other substrates. In order to overcome these issues, a focused ion beam lift-out based approach for site-specific cross-section sample preparation is developed in this work. A directional mechanical polishing procedure to produce smooth damage-free surface for junction profiling is also implemented. Two failure analysis applications of the sample preparation method to visualize junction anomalies using scanning microwave microscopy are also discussed.

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