Recent Advances in Cubic Boron Nitride Deposition

MRS Bulletin ◽  
2003 ◽  
Vol 28 (3) ◽  
pp. 184-188 ◽  
Author(s):  
W.J. Zhang ◽  
I. Bello ◽  
Y. Lifshitz ◽  
S. T. Lee

AbstractThis article reviews recent progress in the deposition of thick, adherent, cubic boron nitride (c-BN) films. Most of the previous work applied ion-assisted physical vapor deposition methods to deposit c-BN films. The ion impact was successful in nucleating c-BN crystallites, but it resulted in a very small crystallite size and introduced stress, which caused the delamination of films thicker than 100 nm. Recent efforts to reduce the stress and obtain thicker films are described. The limited success of these attempts motivated us to explore chemical vapor deposition methods based on fluorine chemistry. We review this work, detailing the success of depositing thick (>20 μ), stress-free, adherent films with a larger crystallite size and significantly better crystalline quality.

2003 ◽  
Vol 12 (3-7) ◽  
pp. 1138-1145 ◽  
Author(s):  
Takeo Oku ◽  
Kenji Hiraga ◽  
Toshitsugu Matsuda ◽  
Toshio Hirai ◽  
Makoto Hirabayashi

1997 ◽  
Vol 12 (7) ◽  
pp. 1675-1677 ◽  
Author(s):  
Shojiro Komatsu

The passivation of the nitrogen top-layered (100) surface of cBN by hydrogen was theoretically predicted recently to be related to the difficulty of chemical vapor deposition of cubic boron nitride. The possibility of photochemical depassivation of this surface was suggested by the anti-bonding nature of the surface H–N bonds at the lowest unoccupied molecular orbital; that was demonstrated by AM1 molecular orbital calculations using large cBN clusters such as B30N32H64(2+) and B30N32H62 (2BH3).


2010 ◽  
Vol 638-642 ◽  
pp. 2956-2961 ◽  
Author(s):  
Hang Sheng Yang ◽  
Norihiko Kurebayashi ◽  
Toyonobu Yoshida

In situ sulphur doping of cubic boron nitride (cBN) films was investigated by adding H2S into a plasma-enhanced chemical vapor deposition system. It was found that the nucleation of cBN was suppressed severely with a very low H2S concentration, while cBN could be grown continuously even at a H2S concentration as high as that of the boron source after its nucleation. Accordingly, S was incorporated into cBN films meanwhile keeping the cubic phase concentration as high as 95%. And a rectification ratio of approximately 10 5 was observed at room temperature for heterojunction diodes prepared by depositing S-doped cBN films on p-type silicon substrates, which suggests the possibility of an n-type-like doping. Moreover, 1500K post annealing of cBN films in H2 atmosphere was found to be able to release the residual compressive stress evidently. Thus, film adhesion strength increased markedly, and cBN films reached a thickness over 200 nm without peeling off from silicon and quartz substrates in air after 9 months.


ChemInform ◽  
2007 ◽  
Vol 38 (2) ◽  
Author(s):  
J. Yu ◽  
Z. Zheng ◽  
H. C. Ong ◽  
K. Y. Wong ◽  
S. Matsumoto ◽  
...  

1994 ◽  
Vol 64 (13) ◽  
pp. 1638-1640 ◽  
Author(s):  
Hidetoshi Saitoh ◽  
Takeshi Hirose ◽  
Tomoo Ohtsuka ◽  
Yukio Ichinose

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