Integration Challenges for CMP of Copper

MRS Bulletin ◽  
2002 ◽  
Vol 27 (10) ◽  
pp. 776-778 ◽  
Author(s):  
Rajeev Bajaj ◽  
Ajoy Zutshi ◽  
Rahul Surana ◽  
Mehul Naik ◽  
Tony Pan
Keyword(s):  
Chemical Mechanical Planarization ◽  
Dielectric Substrate ◽  
Dielectric Films ◽  
Feature Size ◽  
Microelectronic Devices ◽  
Integration Schemes ◽  
New Challenges ◽  
Minimum Feature Size ◽  
Definition Of ◽  
Low K

AbstractAs the minimum feature size of microelectronic devices shrinks down to 130 nm, copper has been successfully adopted into logic applications.1–3 Copper requires damascene processing, which involves etching features into a dielectric substrate, filling the features with metal, and removing any excess metal. Therefore, chemical—mechanical planarization (CMP) is a key process in the final definition of the inlaid copper wires on a circuit. A second advance in the back-end processing of copper is the changing of the dielectric from SiO2 to a Low-κ material, which allows a thicker layer of dielectric to be used. Low-k dielectric films have much lower mechanical properties than SiO2; consequently, this poses new challenges in developing integration schemes.1,3–8

Directions in the Chemical Mechanical Planarization Research

1999 ◽  
Vol 566 ◽  
Author(s):  
Shyam P. Murarka
Keyword(s):  
Chemical Mechanical Planarization ◽  
Feature Size ◽  
Semiconductor Chip ◽  
Margin Of Error ◽  
Chip Fabrication ◽  
Minimum Feature Size ◽  
Relationship Of ◽  
The Relationship ◽  
Interconnect Material ◽  
Lower Resistivity

Planarized surfaces have become key to the success of advanced semiconductor devises/circuits/chips. The planarization, achieved by the use of chemical mechanical means, has enabled the interconnection of ever increasing number of devices and also the use of lower resistivity copper as the interconnect material for such devices. Chemical mechanical planarization (CMIP) has now found application at several different stages of semiconductor chip fabrication and many other microelectronic applications. However, there remain a large number of nuances and effects e.g. pattern, chemical, and pad dependencies and scratching, that need to be carefully studied, evaluated and eliminated if we want to continue to progress in sub 0.1 µm (minimum feature size) regime, where the amounts of material to be removed will be small, surfaces will dominate the performance, and margin of error extremely small and unforgiving. This presentation will discuss the future needs, the CMP variables, the relationship of these variables to CMP behavior and planarity, scratch-free CMP, and size-impact on CMP outcome. A new set of goals will be presented and discussed.

Precision Xe Plasma FIB Delayering for Physical Failure Analysis of Sub-20 nm Microprocessor Devices

2017 ◽  
Author(s):  
D. Zudhistira ◽  
V. Viswanathan ◽  
V. Narang ◽  
J.M. Chin ◽  
S. Sharang ◽  
...  
Keyword(s):  
Failure Analysis ◽  
Dielectric Films ◽  
Planar Surface ◽  
Chemical Methods ◽  
Root Cause ◽  
Essential Step ◽  
Dielectric Layers ◽  
Wet Chemical ◽  
20 Nm ◽  
Low K

Abstract Deprocessing is an essential step in the physical failure analysis of ICs. Typically, this is accomplished by techniques such as wet chemical methods, RIE, and mechanical manual polishing. Manual polishing suffers from highly non-uniform delayering particularly for sub 20nm technologies due to aggressive back-end-of-line scaling and porous ultra low-k dielectric films. Recently gas assisted Xe plasma FIB has demonstrated uniform delayering of the metal and dielectric layers, achieving a planar surface of heterogeneous materials. In this paper, the successful application of this technique to delayer sub-20 nm microprocessor chips with real defects to root cause the failure is presented.

Finite-Element Modeling and Quantitative Measurement Using Scanning Microwave Microscopy to Characterize Dielectric Films

2018 ◽  
Author(s):  
K. A. Rubin ◽  
W. Jolley ◽  
Y. Yang
Keyword(s):  
Thin Films ◽  
Dielectric Film ◽  
Dielectric Constants ◽  
Dielectric Films ◽  
Silicon Substrates ◽  
Fem Modeling ◽  
Dielectric Thin Films ◽  
Microwave Microscopy ◽  
Scanning Microwave Microscopy ◽  
Low K

Abstract Scanning Microwave Impedance Microscopy (sMIM) can be used to characterize dielectric thin films and to quantitatively discern film thickness differences. FEM modeling of the sMIM response provides understanding of how to connect the measured sMIM signals to the underlying properties of the dielectric film and its substrate. Modeling shows that sMIM can be used to characterize a range of dielectric film thicknesses spanning both low-k and medium-k dielectric constants. A model system consisting of SiO2 thin films of various thickness on silicon substrates is used to illustrate the technique experimentally.

The characterization and preparation of porous low dielectric films using various cyclodextrins as template materials

2003 ◽  
Vol 766 ◽  
Author(s):  
Jin-Heong Yim ◽  
Jung-Bae Kim ◽  
Hyun-Dam Jeong ◽  
Yi-Yeoul Lyu ◽  
Sang Kook Mah ◽  
...  
Keyword(s):  
Thin Film ◽  
Mechanical Properties ◽  
Dielectric Constant ◽  
Pore Structure ◽  
Pore Diameter ◽  
Dielectric Films ◽  
Low Dielectric Constant ◽  
Cyclodextrin Derivatives ◽  
Low Dielectric ◽  
Low K

AbstractPorous low dielectric films containing nano pores (∼20Å) with low dielectric constant (<2.2), have been prepared by using various kinds of cyclodextrin derivatives as porogenic materials. The pore structure such as pore size and interconnectivity can be controlled by changing functional groups of the cyclodextrin derivatives. We found that mechanical properties of porous low-k thin film prepared with mCSSQ (modified cyclic silsesquioxane) precursor and cyclodextrin derivatives were correlated with the pore interconnection length. The longer the interconnection length of nanopores in the thin film, the worse the mechanical properties of the thin film (such as hardness and modulus) even though the pore diameter of the films were microporous (∼2nm).

Copper Drifts in Porous Methylsilsesquiazane Low-k Dielectric Films

2000 ◽  
Author(s):  
T. Kikkawa ◽  
S. Mukaigawa ◽  
T. Oda ◽  
T. Aoki ◽  
Y. Shimizu
Keyword(s):  
Dielectric Films ◽  
Low K

Integration of Al-Fill Processes for Contacts and VIAS

1996 ◽  
Vol 427 ◽  
Author(s):  
H. J. Barth
Keyword(s):  
High Pressure ◽  
Chip Design ◽  
Size And Shape ◽  
Future Developments ◽  
Pattern Density ◽  
New Challenges ◽  
On Chip ◽  
Damascene Interconnects ◽  
Low K ◽  
Electrical Data

AbstractToday different Al-fill techniques are used for the fill of submicron contacts and vias. The integration aspects of the most promising approaches, Al-reflow, cold/hot Al-planarization and high pressure Al-fill (Forcefill) are compared to the widely used W-plug technique. The filling properties are discussed with respect to future applications in ULSI devices. Special attention is given to the barrier stability in contacts and the influence on patterning. Various electrical data and reliability results are compared to metallizations with W-plugs. The implications of the Al-fill processes on chip design, especially on the size and shape of holes, the pattern density, the possibility of producing stacked contacts/vias and the metal to contact/via overlap are considered also. In an outlook for future developments, e.g. the introduction of low k dielectrics, the inverse metallization architecture with (dual) damascene interconnects and the emerging Cu metallizations, Alfill processes are facing new challenges which will be discussed.

Simulation and Characterization of Nanoparticle Thermal Conductivity for a Microscale Selective Laser Sintering System

2021 ◽  
Author(s):  
Joshua Grose ◽  
Obehi G. Dibua ◽  
Dipankar Behera ◽  
Chee S. Foong ◽  
Michael Cullinan
Keyword(s):  
Thermal Conductivity ◽  
Selective Laser Sintering ◽  
Primary Source ◽  
Laser Sintering ◽  
Metal Nanoparticle ◽  
Feature Size ◽  
Cad Models ◽  
Minimum Feature Size ◽  
Geometric Arrangements ◽  
Thermal Simulations

Abstract Additive Manufacturing (AM) technologies are often restricted by the minimum feature size of parts they can repeatably build. The microscale selective laser sintering (μ-SLS) process, which is capable of producing single micron resolution parts, addresses this issue directly. However, the unwanted dissipation of heat within the powder bed of a μ-SLS device during laser sintering is a primary source of error that limits the minimum feature size of the producible parts. A particle scale thermal model is needed to characterize the thermal properties of the nanoparticles undergoing sintering and allow for the prediction of heat affected zones (HAZ) and the improvement of final part quality. Thus, this paper presents a method for the determination of the effective thermal conductivity of metal nanoparticle beds in a microscale selective laser sintering process using finite element simulations in ANSYS. CAD models of nanoparticle groups at various timesteps during sintering are developed from Phase Field Modeling (PFM) output data, and steady state thermal simulations are performed on each group. The complete simulation framework developed in this work is adaptable to particle groups of variable sizes and geometric arrangements. Results from the thermal models are used to estimate the thermal conductivity of the copper nanoparticles as a function of sintering duration.

Top down nano technologies in surface modification of materials

Open Physics ◽  
2011 ◽  
Vol 9 (2) ◽  
Author(s):  
Branislav Radjenović ◽  
Marija Radmilović-Radjenović
Keyword(s):  
Surface Modification ◽  
Three Dimensional ◽  
Wet Etching ◽  
Plasma Reactors ◽  
Top Down ◽  
Isotropic Etching ◽  
Microelectronic Devices ◽  
Etching Profile ◽  
Simulation Results ◽  
Low K

AbstractThis article contains a broad overview of etch process as one of the most important top-down technologies widely used in semiconductor manufacturing and surface modification of nanostructures. In plasma etching process, the complexity comes from the introduction of new materials and from the constant reduction in dimensions of the structures in microelectronics. The emphasis was made on two types of etching processes: dry etching and wet etching illustrated by three dimensional (3D) simulation results for the etching profile evolution based on the level set method. The etching of low-k dielectrics has been demonstrated via modelling the porous materials. Finally, simulation results for the roughness formation during isotropic etching of nanocomposite materials as well as smoothing of the homogeneous materials have also been shown and analyzed. Simulation results, presented here, indicate that with shrinking microelectronic devices, plasma and wet etching interpretative and predictive modeling and simulation have become increasingly more attractive as a tool for design, control and optimization of plasma reactors.

A comparative study on the measurement of toughness of stacks containing low-k dielectric films

2008 ◽  
Vol 85 (11) ◽  
pp. 2322-2328 ◽  
Author(s):  
Z.W. Zheng ◽  
I. Sridhar ◽  
S. Balakumar
Keyword(s):  
Comparative Study ◽  
Dielectric Films ◽  
Low K

scholarly journals New Definition of Sepsis

2013 ◽  
Vol 2 (1) ◽  
pp. 37
Author(s):  
Fuzhou Wang
Keyword(s):  
Septic Shock ◽  
Intensive Care ◽  
Systemic Inflammatory Response Syndrome ◽  
Inflammatory Response ◽  
Organ Dysfunction ◽  
Medical Science ◽  
Accurate Diagnosis ◽  
Causes Of Mortality ◽  
New Challenges ◽  
Definition Of

Sepsis or septic shock is one of the major causes of mortality in intensive care medicine. How to define and how to make an accurate diagnosis possess critical implications for patients and intensive caregivers. With the development of modern medical science, new challenges rose for how to re-define sepsis and also revision is needed. Should we add organ dysfunction to the diagnostic criteria of systemic inflammatory response syndrome, and whether are there early symptoms or signs of organ dysfunction need to be considered critically. May be the new definition of sepsis can save more lives.

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