Atomic-Level Control during Film Growth under Highly Kinetically Constrained Conditions: H Mediation and Ultrahigh Doping during Si1–X Gex Gas-Source Epitaxy

MRS Bulletin ◽  
2001 ◽  
Vol 26 (10) ◽  
pp. 777-789 ◽  
Author(s):  
J.E. Greene
Keyword(s):  
Thin Film ◽  
Materials Science ◽  
Film Growth ◽  
Atomic Level ◽  
Level Control ◽  
Film Properties ◽  
Gas Source ◽  
Control Film ◽  
Constrained Conditions

We are living in the golden era of materials science. To cite but one example, consider the field of thin-film physics. Crystal growers have been moving inexorably closer to being able to deposit layers and hence to control film properties on an atom-by-atom basis. We are nearing an era in which it will be possible to deposit “designer” materials with a specified set of properties.

Atomic level control in gas source MBE growth of cubic SiC

1990 ◽  
Vol 99 (1-4) ◽  
pp. 520-524 ◽  
Author(s):  
Tatsuo Yoshinobu ◽  
Michiaki Nakayama ◽  
Hiromu Shiomi ◽  
Takashi Fuyuki ◽  
Hiroyuki Matsunami
Keyword(s):  
Atomic Level ◽  
Level Control ◽  
Mbe Growth ◽  
Gas Source ◽  
Gas Source Mbe

Materials Science Aspects of Photonic Crystals

MRS Bulletin ◽  
2001 ◽  
Vol 26 (8) ◽  
pp. 608-613 ◽  
Author(s):  
Albert Polman ◽  
Pierre Wiltzius
Keyword(s):  
Thin Film ◽  
Photonic Crystals ◽  
Small Area ◽  
Materials Science ◽  
Film Growth ◽  
Thin Film Growth ◽  
The Other ◽  
The Past ◽  
The One ◽  
Processing Techniques

The electronics revolution of the past 50 years has its roots in two scientific and technological areas. On the one hand, there have been tremendous advancements in our understanding of the physics of metals, dielectrics, and semiconductors, leading to the development of devices such as the transistor. On the other hand, a variety of processing techniques such as thin-film growth and deposition, ion implantation, and photolithography have allowed the massive integration of electronic functionality within a very small area, leading to microprocessors and high-density memory, among other innovations.

Naphthalenetetracarboxylic Diimide Derivatives: Molecular Structure, Thin Film Properties and Solar Cell Applications

2018 ◽  
Vol 232 (9-11) ◽  
pp. 1717-1732 ◽  
Author(s):  
Christiane Falkenberg ◽  
Markus Hummert ◽  
Rico Meerheim ◽  
Christoph Schünemann ◽  
Selina Olthof ◽  
...  
Keyword(s):  
Thin Film ◽  
Solar Cells ◽  
Electron Transport ◽  
Charge Transport ◽  
Organic Solar Cells ◽  
Film Growth ◽  
Side Chain ◽  
Film Properties ◽  
Custom Made ◽  
Molecular Doping

Abstract The effciency of organic solar cells is not only determined by their absorber system, but also strongly dependent on the performance of numerous interlayers and charge transport layers. In order to establish new custom-made materials, the study of structure-properties relationships is of great importance. This publication examines a series of naphthalenetetracarboxylic diimide molecules (NTCDI) with varying side-chain length intended for the use as n-dopable electron transport materials in organic solar cells. While all compounds basically share very similar absorption spectra and energy level positions in the desired range, the introduction of alkyl chains has a large impact on thin film growth and charge transport properties: both crystallization and the increase of conductivity by molecular doping are suppressed. This has a direct influence on the series resistance of corresponding solar cells comprising an NTCDI derivative as electron transport material (ETM) as it lowers the power conversion efficiency to ≪1%. In contrast, using the side-chain free compound it is possible to achive an efficiency of 6.5%, which is higher than the efficiency of a comparable device comprising n-doped C60 as standard ETM.

Role of Kinetic Energy of Sputtered Particles in Thin Film Properties

1992 ◽  
Vol 268 ◽  
Author(s):  
Yasunori Taga
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Kinetic Energy ◽  
Materials Science ◽  
Sputter Deposition ◽  
Structure And Properties ◽  
Film Properties ◽  
Emission Effect ◽  
Exciting Area

ABSTRACTThe thin film processes of the sputter deposition method have been reviewed with special emphasis on the effects of kinetic energy of sputtered particles and ion bombardment during deposition on thin film properties. An overview is first given to describe the thin film process and ion-surface interactions, where the methods of measuring the energy distribution of sputtered ions and the anisotropic-emission-effect sputter deposition are presented. Experimental results for Cr, SiO2 and Ni-Si-B films are presented, and the correlation between the structure and properties of the thin films is discussed. Research in modification of thin films by energetic atoms and ions is an exciting area of materials science in the future.

Microstructural characterization of YBa2Cu3O7-x thin films formed by metalorganic CVD

1991 ◽  
Vol 49 ◽  
pp. 1080-1081
Author(s):  
P. Lu ◽  
W. Huang ◽  
C.S. Chern ◽  
Y.Q. Li ◽  
J. Zhao ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Critical Current Density ◽  
Critical Current ◽  
Current Density ◽  
Film Growth ◽  
Chemical Vapor ◽  
Microstructural Characterization ◽  
Ion Milling ◽  
Conventional Grinding

The YBa2Cu3O7-x thin films formed by metalorganic chemical vapor deposition(MOCVD) have been reported to have excellent superconducting properties including a sharp zero resistance transition temperature (Tc) of 89 K and a high critical current density of 2.3x106 A/cm2 or higher. The origin of the high critical current in the thin film compared to bulk materials is attributed to its structural properties such as orientation, grain boundaries and defects on the scale of the coherent length. In this report, we present microstructural aspects of the thin films deposited on the (100) LaAlO3 substrate, which process the highest critical current density.Details of the thin film growth process have been reported elsewhere. The thin films were examined in both planar and cross-section view by electron microscopy. TEM sample preparation was carried out using conventional grinding, dimpling and ion milling techniques. Special care was taken to avoid exposure of the thin films to water during the preparation processes.

Quantitative Image Analysis of Fractal-like Thin Films of Organic Semiconductors

2018 ◽  
Author(s):  
Weikun Zhu ◽  
Erfan Mohammadi ◽  
Ying Diao
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Image Analysis ◽  
Fractal Dimension ◽  
Organic Semiconductors ◽  
Film Growth ◽  
Electronic Device ◽  
Significant Control ◽  
Semiconductor Thin Films ◽  
Two Parameters

Morphology modulation offers significant control over organic electronic device performance. However, morphology quantification has been rarely carried out via image analysis. In this work, we designed a MATLAB program to evaluate two key parameters describing morphology of small molecule semiconductor thin films: fractal dimension and film coverage. We then employ this program in a case study of meniscus-guided coating of 2,7-dioctyl[1]benzothieno[3,2-b][1]benzothiophene (C<sub>8</sub>-BTBT) under various conditions to analyze a diverse and complex morphology set. The evolution of morphology in terms of fractal dimension and film coverage was studied as a function of coating speed. We discovered that combined fractal dimension and film coverage can quantitatively capture the key characteristics of C<sub>8</sub>-BTBT thin film morphology; change of these two parameters further inform morphology transition. Furthermore, fractal dimension could potentially shed light on thin film growth mechanisms.

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