Probing bonding and electronic structure at atomic resolution with spectroscopic imaging

MRS Bulletin ◽  
2012 ◽  
Vol 37 (1) ◽  
pp. 21-28 ◽  
Author(s):  
Gianluigi A. Botton

Abstract

2017 ◽  
Vol 7 (3) ◽  
pp. 523-540 ◽  
Author(s):  
Johann Lüder ◽  
Fleur Legrain ◽  
Yingqian Chen ◽  
Sergei Manzhos

Abstract


2000 ◽  
Vol 5 (S1) ◽  
pp. 287-293
Author(s):  
J. A. Chisholm ◽  
P. D. Bristowe

We report on the interaction of native point defects with commonly observed planar defects in GaN. Using a pair potential model we find a positive binding energy for all native defects to the three boundary structures investigated indicating a preference for native defects to form in these interfaces. The binding energy is highest for the Ga interstitial and lowest for vacancies. Interstitials, which are not thought to occur in significant concentrations in bulk GaN, should form in the (11 0) IDB and the (10 0) SMB and consequently alter the electronic structure of these boundaries.


2017 ◽  
Vol 32 (18) ◽  
pp. 3494-3506
Author(s):  
John M. Vail ◽  
Oscar J. Hernandez ◽  
Mingsu Si ◽  
Zhoufei Wang

Abstract


2019 ◽  
Vol 34 (19) ◽  
pp. 3296-3304 ◽  
Author(s):  
Axel van de Walle ◽  
Julian E.C. Sabisch ◽  
Andrew M. Minor ◽  
Mark Asta

Abstract


RSC Advances ◽  
2015 ◽  
Vol 5 (24) ◽  
pp. 18506-18510 ◽  
Author(s):  
Rong Sun ◽  
Zhongchang Wang ◽  
Naoya Shibata ◽  
Yuichi Ikuhara

We provide a direct atomic-resolution imaging of the core structure of a dislocation in technologically important TiO2 and predict that every individual impurity-free dislocation exhibits electric conductivity in an otherwise insulating TiO2.


2016 ◽  
Vol 6 (3) ◽  
pp. 145-150 ◽  
Author(s):  
Andrew M. Ritzmann ◽  
Johannes M. Dieterich ◽  
Emily A. Carter

Abstract


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