Consequences on the electronic structure and hyperfine of iridium–iron alloys when transformed into substituted iron iridium nitrides

2014 ◽  
Vol 29 (8) ◽  
pp. 959-974 ◽  
Author(s):  
A.V. dos Santos

Abstract

2017 ◽  
Vol 7 (3) ◽  
pp. 523-540 ◽  
Author(s):  
Johann Lüder ◽  
Fleur Legrain ◽  
Yingqian Chen ◽  
Sergei Manzhos

Abstract


2000 ◽  
Vol 5 (S1) ◽  
pp. 287-293
Author(s):  
J. A. Chisholm ◽  
P. D. Bristowe

We report on the interaction of native point defects with commonly observed planar defects in GaN. Using a pair potential model we find a positive binding energy for all native defects to the three boundary structures investigated indicating a preference for native defects to form in these interfaces. The binding energy is highest for the Ga interstitial and lowest for vacancies. Interstitials, which are not thought to occur in significant concentrations in bulk GaN, should form in the (11 0) IDB and the (10 0) SMB and consequently alter the electronic structure of these boundaries.


2017 ◽  
Vol 32 (18) ◽  
pp. 3494-3506
Author(s):  
John M. Vail ◽  
Oscar J. Hernandez ◽  
Mingsu Si ◽  
Zhoufei Wang

Abstract


2019 ◽  
Vol 34 (19) ◽  
pp. 3296-3304 ◽  
Author(s):  
Axel van de Walle ◽  
Julian E.C. Sabisch ◽  
Andrew M. Minor ◽  
Mark Asta

Abstract


2011 ◽  
Vol 52 (6) ◽  
pp. 1324-1326 ◽  
Author(s):  
Yasumasa Chino ◽  
Takamichi Ueda ◽  
Motohisa Kado ◽  
Mamoru Mabuchi

1982 ◽  
Vol 12 (6) ◽  
pp. 1203-1207 ◽  
Author(s):  
S R Allan ◽  
D M Edwards

2016 ◽  
Vol 6 (3) ◽  
pp. 145-150 ◽  
Author(s):  
Andrew M. Ritzmann ◽  
Johannes M. Dieterich ◽  
Emily A. Carter

Abstract


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