Tin sulfide (SnS) thin-film solar cells deposited by organic chemical vapor sulfurization based on CdS and high transmittance Cd(S,O) n-type layers with the superstrate device structure

2020 ◽  
Vol 10 (4) ◽  
pp. 660-666
Author(s):  
Faruk Ballipinar
Keyword(s):  
Thin Film ◽  
Solar Cells ◽  
Chemical Vapor ◽  
Thin Film Solar Cells ◽  
Organic Chemical ◽  
Tin Sulfide ◽  
Device Structure

Fabrications of Si Thin-Film Solar Cells by Hot-Wire Chemical Vapor Deposition and Laser Doping Techniques

2006 ◽  
Vol 45 (4B) ◽  
pp. 3516-3518 ◽  
Author(s):  
Shui-Yang Lien ◽  
Dong-Sing Wuu ◽  
Hsin-Yuan Mao ◽  
Bing-Rui Wu ◽  
Yen-Chia Lin ◽  
...  
Keyword(s):  
Thin Film ◽  
Solar Cells ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Thin Film Solar Cells ◽  
Hot Wire ◽  
Laser Doping ◽  
Si Thin Film

Improvement of Single-Junction a-Si:H Thin-Film Solar Cells Toward 10% Efficiency

2011 ◽  
Vol 1321 ◽  
Author(s):  
P. H. Cheng ◽  
S. W. Liang ◽  
Y. P. Lin ◽  
H. J. Hsu ◽  
C. H. Hsu ◽  
...  
Keyword(s):  
Thin Film ◽  
Solar Cells ◽  
Amorphous Silicon ◽  
Chemical Vapor ◽  
Thin Film Solar Cells ◽  
Window Layer ◽  
Electron Hole ◽  
Single Junction ◽  
Boron Doped ◽  
Hydrogenated Amorphous

ABSTRACTThe hydrogenated amorphous silicon (a-Si:H) single-junction thin-film solar cells were fabricated on SnO2:F-coated glasses by plasma-enhanced chemical vapor deposition (PECVD) system. The boron-doped amorphous silicon carbide (a-SiC:H) was served as the window layer (p-layer) and the undoped a-SiC:H was used as a buffer layer (b-layer). The optimization of the p/b/i/n thin-films in a-Si:H solar cells have been carried out and discussed. Considering the effects of light absorption, electron-hole extraction and light-induced degradation, the thicknesses of p, b, n and i layers have been optimized. The optimal a-Si:H thin-film solar cell having an efficiency of 9.46% was achieved, with VOC=906 mV, JSC=14.42 mA/cm2 and FF=72.36%.

Novel device structure for Cu(In,Ga)Se2 thin film solar cells using transparent conducting oxide back and front contacts

Solar Energy ◽  
2004 ◽  
Vol 77 (6) ◽  
pp. 739-747 ◽  
Author(s):  
Tokio Nakada ◽  
Yutaka Hirabayashi ◽  
Takehito Tokado ◽  
Daiske Ohmori ◽  
Takahiro Mise
Keyword(s):  
Thin Film ◽  
Solar Cells ◽  
Transparent Conducting Oxide ◽  
Thin Film Solar Cells ◽  
Device Structure ◽  
Novel Device ◽  
Transparent Conducting

scholarly journals Silicon nitride anti-reflection coatings for CdS/CuInSe2 thin film solar cells by electron beam assisted chemical vapor deposition

Solar Cells ◽  
1985 ◽  
Vol 14 (3) ◽  
pp. 289-291 ◽  
Author(s):  
B.J. Stanbery ◽  
W.S. Chen ◽  
R.A. Mickelsen ◽  
G.J. Collins ◽  
K.A. Emery ◽  
...  
Keyword(s):  
Thin Film ◽  
Electron Beam ◽  
Solar Cells ◽  
Chemical Vapor Deposition ◽  
Silicon Nitride ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Thin Film Solar Cells ◽  
Cuinse2 Thin Film

Single-step organic vapor phase sulfurization synthesis of p-SnS photo-absorber for graded band-gap thin film heterojunction solar cells with n-ZnO1-x Sx

MRS Advances ◽  
2016 ◽  
Vol 1 (41) ◽  
pp. 2801-2806 ◽  
Author(s):  
Faruk Ballipinar ◽  
Alok C. Rastogi
Keyword(s):  
Thin Film ◽  
Solar Cells ◽  
Band Gap ◽  
Structural Phase ◽  
Single Step ◽  
Organic Chemical ◽  
Tin Sulfide ◽  
Orthorhombic Crystal ◽  
Orthorhombic Crystal Structure ◽  
Organic Vapor

ABSTRACTTin sulfide has emerged as a promising solar absorber among the IV-VI binary compound which is earth-abundant and non-toxic. This research provides a new perspective on synthesis of photosensitive monophasic SnS films by organic chemical vapor sulfurization of Sn thin film. S-radicals formed by closed space pyrolysis of di-tert-butyl disulfide (TBDS) diffusively react with Sn to produce SnS film. SnS being an amphoteric semiconductor converts to n-type by trivalent Sb and Bi dopants. The organic vapor sulfurization method described in this research facilitates single-step synthesis of buried junction structures and thus SnS solar cells in a p-n homojunction or p-i-n structures. In this work, vacuum evaporated Sn thin film with a thickness of 100 nm, was converted to SnS by sulfurization under 100 sccm flow of TBDS vapor preheated to 100°C and structural phase evolution and film growth kinetics were investigated for sulfurization at 200°C, 300°C and 400°C for a periods 90 min. X-ray diffraction studies establish single phase highly crystalline film in orthorhombic crystal structure forms at 200°C. Raman scattering results confirm SnS formation with the identification of 2Ag, 2B2g optical phonons modes. Optical bandgap studies confirm a low energy 1.1-1.4 eV indirect bandgap and a strong absorption threshold between 1.4 to 1.6 eV direct band gap depending on the sulfurization conditions correlating with intrinsic defects and phase structure of the film.

scholarly journals Optimization of Mo/Cr bilayer back contacts for thin-film solar cells

2018 ◽  
Vol 9 ◽  
pp. 2700-2707 ◽  
Author(s):  
Nima Khoshsirat ◽  
Fawad Ali ◽  
Vincent Tiing Tiong ◽  
Mojtaba Amjadipour ◽  
Hongxia Wang ◽  
...  
Keyword(s):  
Thin Film ◽  
Solar Cells ◽  
Solar Cell ◽  
Single Layer ◽  
Soda Lime ◽  
Thin Film Solar Cells ◽  
Soda Lime Glass ◽  
Tin Sulfide ◽  
Back Contact ◽  
Bilayer Films

Molybdenum (Mo) is the most commonly used material as back contact in thin-film solar cells. Adhesion of Mo film to soda–lime glass (SLG) substrate is crucial to the performance of solar cells. In this study, an optimized bilayer structure made of a thin layer of Mo on an ultra-thin chromium (Cr) adhesion layer is used as the back contact for a copper zinc tin sulfide (CZTS) thin-film solar cell on a SLG substrate. DC magnetron sputtering is used for deposition of Mo and Cr films. The conductivity of Mo/Cr bilayer films, their microstructure and surface morphology are studied at different deposition powers and working pressures. Good adhesion to the SLG substrate has been achieved by means of an ultra-thin Cr layer under the Mo layer. By optimizing the deposition conditions we achieved low surface roughness, high optical reflectance and low sheet resistivity while we could decrease the back contact thickness to 600 nm. That is two thirds to half of the thickness that is currently being used for bilayer and single layer back contact for thin-film solar cells. We demonstrate the excellent properties of Mo/Cr bilayer as back contact of a CZTS solar cell.

Trade-offs of the opto-electrical properties of a-Si:H solar cells based on MOCVD BZO films

2015 ◽  
Vol 17 (1) ◽  
pp. 459-464 ◽  
Author(s):  
Ze Chen ◽  
Xiao-dan Zhang ◽  
Jun-hui Liang ◽  
Jia Fang ◽  
Xue-jiao Liang ◽  
...  
Keyword(s):  
Solar Cells ◽  
Vapor Deposition ◽  
Light Trapping ◽  
Chemical Vapor ◽  
Thin Film Solar Cells ◽  
Organic Chemical ◽  
Boron Doped ◽  
Trade Offs ◽  
Metal Organic ◽  
Organic Chemical Vapor Deposition

Boron-doped zinc oxide (BZO) films, deposited by metal–organic chemical vapor deposition (MOCVD), have been widely used as front electrodes in thin-film solar cells due to their native pyramidal surface structure, which results in efficient light trapping.

Sign in / Sign up

Export Citation Format

Share Document