Chemical solution deposition as a route to narrow-band gap and room-temperature ferromagnetic perovskite [K0.5Na0.5NbO3]1−x[BaNi0.5Nb0.5O3−δ]x films

2019 ◽  
Vol 34 (21) ◽  
pp. 3627-3635
Author(s):  
Xuezhen Zhai ◽  
Shizhuo Wang ◽  
Cui Shang ◽  
Pingxiong Yang
Keyword(s):  
Band Gap ◽  
Chemical Solution Deposition ◽  
Room Temperature ◽  
Narrow Band ◽  
Chemical Solution ◽  
Solution Deposition ◽  
Image Position

Abstract

scholarly journals Chemical Solution Deposition of Ordered 2D Arrays of Room-Temperature Ferrimagnetic Cobalt Ferrite Nanodots

Polymers ◽  
2019 ◽  
Vol 11 (10) ◽  
pp. 1598 ◽  
Author(s):  
Jin Xu ◽  
Justin Varghese ◽  
Giuseppe Portale ◽  
Alessandro Longo ◽  
Jamo Momand ◽  
...  
Keyword(s):  
Chemical Solution Deposition ◽  
Room Temperature ◽  
Cobalt Ferrite ◽  
Magnetic Nanostructures ◽  
Memory Storage ◽  
Blocking Temperature ◽  
Chemical Solution ◽  
Solution Deposition ◽  
X Ray ◽  
2D Arrays

Over the past decades, the development of nano-scale electronic devices and high-density memory storage media has raised the demand for low-cost fabrication methods of two-dimensional (2D) arrays of magnetic nanostructures. Here, we present a chemical solution deposition methodology to produce 2D arrays of cobalt ferrite (CFO) nanodots on Si substrates. Using thin films of four different self-assembled block copolymers as templates, ordered arrays of nanodots with four different characteristic dimensions were fabricated. The dot sizes and their long-range arrangement were studied with scanning electron microscopy (SEM) and grazing incident small-angle X-ray scattering (GISAXS). The structural evolution during UV/ozone treatment and the following thermal annealing was investigated through monitoring the atomic arrangement with X-ray absorption fine structure spectroscopy (EXAFS) and checking the morphology at each preparation step. The preparation method presented here obtains array types that exhibit thicknesses less than 10 nm and blocking temperatures above room temperature (e.g., 312 K for 20 nm diameter dots). Control over the average dot size allows observing an increase of the blocking temperature with increasing dot diameter. The nanodots present promising properties for room temperature data storage, especially if a better control over their size distribution will be achieved in the future.

Surface Plasmon Mediated Chemical Solution Deposition of Gold Nanoparticles on a Nanostructured Silver Surface at Room Temperature

2012 ◽  
Vol 135 (1) ◽  
pp. 38-41 ◽  
Author(s):  
Jingjing Qiu ◽  
Yung-Chien Wu ◽  
Yi-Chung Wang ◽  
Mark H. Engelhard ◽  
Lisa McElwee-White ◽  
...  
Keyword(s):  
Gold Nanoparticles ◽  
Surface Plasmon ◽  
Chemical Solution Deposition ◽  
Room Temperature ◽  
Chemical Solution ◽  
Silver Surface ◽  
Solution Deposition

scholarly journals The Effect of Niobium and Rubidium Doping on the Energy Band Gap of a Lithium Tantalate (LiTaO3) Thin Film

2021 ◽  
Vol 32 (2) ◽  
pp. 1-5
Author(s):  
Agus Ismangil ◽  
Fatimah Arofiati Noor ◽  
Toto Winata
Keyword(s):  
Band Gap ◽  
Valence Band ◽  
Conduction Band ◽  
Chemical Solution Deposition ◽  
Band Gap Energy ◽  
Chemical Solution ◽  
Energy Band Gap ◽  
Solution Deposition ◽  
Gap Energy ◽  
Niobium Doped

Chemical solution deposition (CSD) is a technique for making a film by keeping synthetic arrangements on the outer layer of the substrate. The outcomes show that the band gap energy of the LiTaO3 film is 1 eV. Electrons are more effectively invigorated to the valence band than to the conduction band on the grounds that the energy required is not excessively huge. Niobium-doped LiTaO3 film has a band gap energy of 1.15 eV. A large amount of energy is needed for electrons to be energized from the valence band to the conduction band. The rubidium-doped LiTaO3 film has a band gap energy of 1.30 eV.

scholarly journals Oriented hexagonal ferrite thin films prepared by chemical solution deposition

2014 ◽  
Vol 70 (a1) ◽  
pp. C725-C725
Author(s):  
Josef Bursik ◽  
Radomir Kuzel ◽  
Karel Knizek ◽  
Ivo Drbohlav
Keyword(s):  
Thin Films ◽  
Chemical Solution Deposition ◽  
Seed Layer ◽  
Room Temperature ◽  
Low Cost ◽  
Sol Gel ◽  
Hexagonal Ferrite ◽  
Material System ◽  
Chemical Solution ◽  
Solution Deposition

Hexagonal ferrites (M, Y, Z-type) represent a new diverse class of magnetoelectric (ME) multiferroics, where ME effect is driven by complex magnetic order. Integration of ME materials with standard semiconductor technology is important for ultimate realization of ME functionalities. They have the potential to display ME coupling under low magnetic field bias and at temperatures close to room temperature. Methods based on sol–gel transition offer possibility of low cost and efficient way for the evaluation of new material system. The single phase, epitaxial thin films of Y-type hexagonal ferrite has been prepared and studied. Thin films of Ba2Zn2Fe12O22(Y) hexaferrite were prepared through the chemical solution deposition method on SrTiO3(111)(ST) single crystal substrates using epitaxial SrFe12O19(M) hexaferrite thin layer as a seed template layer. The process of crystallization was mainly investigated by means of X-ray diffraction and atomic force microscopy. A detailed inspection revealed that growth of seed layer starts through the break-up of initially continuous film into high density of well-oriented isolated grains with expressive shape anisotropy and hexagonal habit.The vital parameters of the seed layer, i.e. thickness, substrate coverage,crystallization conditions and temperature ramp were optimized with the aim to obtain epitaxially crystallized Y phase. By overcoating this seed layer, Y phase prepared under optimum deposition and heat treatment conditions presents a (001) orientation perpendicular to the substrate. Perfect parallel in-plane alignment of the hexagonal cells of SrTiO3substrate and both hexaferrite phases was proved by fast ω and φ scan measurements on sets of several diffraction planes at asymmetric orientations, and also by pole figures. The soft magnetic character and existence of pronounced magnetic anisotropy in Y films were confirmed by room temperature measurements of magnetization.

Epitaxial (001) BiFeO3 thin-films with excellent ferroelectric properties by chemical solution deposition-the role of gelation

2015 ◽  
Vol 3 (3) ◽  
pp. 582-595 ◽  
Author(s):  
Qi Zhang ◽  
Nagarajan Valanoor ◽  
Owen Standard
Keyword(s):  
Thin Films ◽  
Chemical Solution Deposition ◽  
Room Temperature ◽  
Ferroelectric Properties ◽  
Critical Role ◽  
Chemical Solution ◽  
Solution Deposition ◽  
Bifeo3 Thin Films

The critical role of gelation is demonstrated in order to achieve epitaxial (001)-BFO thin films with robust room-temperature ferroelectric properties.

Porous Fe3O4 thin films by pulsed laser assisted chemical solution deposition at room temperature

2019 ◽  
Vol 478 ◽  
pp. 408-411 ◽  
Author(s):  
Yanqiu Liu ◽  
Renhuai Wei ◽  
Wei Ding ◽  
Xin Wang ◽  
Wenhai Song ◽  
...  
Keyword(s):  
Thin Films ◽  
Chemical Solution Deposition ◽  
Room Temperature ◽  
Pulsed Laser ◽  
Chemical Solution ◽  
Solution Deposition

scholarly journals Photoluminescence at room temperature in amorphous SrTiO3 thin films obtained by chemical solution deposition

2003 ◽  
Vol 77 (2) ◽  
pp. 598-602 ◽  
Author(s):  
F.M Pontes ◽  
E Longo ◽  
E.R Leite ◽  
E.J.H Lee ◽  
J.A Varela ◽  
...  
Keyword(s):  
Thin Films ◽  
Chemical Solution Deposition ◽  
Room Temperature ◽  
Chemical Solution ◽  
Solution Deposition
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