Linear, third order nonlinear and optical limiting studies on MZO/FTO thin film system fabricated by spin coating technique for electro-optic applications

2018 ◽  
Vol 33 (22) ◽  
pp. 3880-3889 ◽  
Author(s):  
Mohd. Shkir ◽  
Mohd. Arif ◽  
Vanga Ganesh ◽  
Mohamed A. Manthrammel ◽  
Arun Singh ◽  
...  
Keyword(s):  
Thin Film ◽  
Spin Coating ◽  
Optical Limiting ◽  
Spin Coating Technique ◽  
Film System ◽  
Third Order ◽  
Coating Technique ◽  
Thin Film System ◽  
Electro Optic ◽  
Image Position

Abstract

Photoconductivity of Nanocomposite MEH-PPV: TiO2 Thin Films

2011 ◽  
Vol 13 ◽  
pp. 87-92 ◽  
Author(s):  
M.S.P Sarah ◽  
F.S. Zahid ◽  
M.Z. Musa ◽  
U.M. Noor ◽  
Z. Shaameri ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Surface Morphology ◽  
Spin Coating ◽  
Glass Substrate ◽  
Spin Coating Technique ◽  
Coating Technique ◽  
Current Voltage ◽  
Current Voltage Characteristics

The photoconductivity of a nanocomposite MEH-PPV:TiO2 thin film is investigated. The nanocomposite MEH-PPV:TiO2 thin film was deposited on a glass substrate by spin coating technique. The composition of the TiO2 powder was varied from 5 wt% to 20 wt% (with 5 wt% interval). The concentration of the MEH-PPV is given by 1 mg/1 ml. The current voltage characteristics were measured in dark and under illumination. The photoconductivity showed increment in value as the composition of the TiO2 is raised in the polymer based solution. The absorption showed augmentation as the amount of TiO2 is increased. The escalation of the current voltage is then supported by the results of surface morphology.

Polycrystalline BiFeO3 thin film synthesized via sol-gel assisted spin coating technique for photosensitive application

2016 ◽  
Author(s):  
K. A. Bogle ◽  
R. D. Narwade ◽  
A. B. Phatangare ◽  
S. S. Dahiwale ◽  
M. P. Mahabole ◽  
...  
Keyword(s):  
Thin Film ◽  
Spin Coating ◽  
Sol Gel ◽  
Spin Coating Technique ◽  
Bifeo3 Thin Film ◽  
Coating Technique

scholarly journals Growth of Tin Oxide Thin Film by Aluminum and Fluorine Doping Using Spin Coating Sol-Gel Techniques

2019 ◽  
Vol 6 (1) ◽  
pp. 1
Author(s):  
Susilawati Susilawati ◽  
Aris Doyan ◽  
Lalu Muliyadi ◽  
Syamsul Hakim
Keyword(s):  
Thin Film ◽  
Thin Layer ◽  
Tin Oxide ◽  
Spin Coating ◽  
Sol Gel ◽  
Spin Coating Technique ◽  
Oxide Thin Film ◽  
Coating Technique ◽  
Materials Used ◽  
Film Making

Abstract: The growth of tin oxide thin film by Aluminum doping and Fluorine has been carried out with the sol-gel spin coating technique. The growth aims to determine the quality of the thin layer formed based on variations in doping aluminum and fluorine. The basic ingredients used were SnCl2.2H2O, while the doping materials used were Al (Aluminium) and F (Fluorine) with variations in dopant concentrations (0, 5, 10, 15, 20 and 25)%. The growth of a thin layer using measured glass (10x10x 3) mm as a substrate. The growth of thin films includes substrate preparation, sol-gel making, thin film making, and heating processes. The growth of thin layer was dripped on a glass substrate with sol-gel spin coating technique at 1 M sol concentration and treated with maturation for 24 hours. The next step is making a thin layer using a spin coater at a speed of 2000 rpm for 3 minutes. After that, the substrate is heated in an oven at 100°C for 60 minutes. The results showed that the transparency level of the tin oxide layer increases with increasing amounts of doping Aluminum and fluorine. Key words: Aluminum, Fluorine, Sol-gel, Spin Coating, Thin Film, Tin Oxide

The Influence of Mn/Ga Solution Mole Fraction on the Solid Composition and Microstructure of GaN:Mn Thin Film Deposited on Silicon Substrate by Spin Coating Technique

2014 ◽  
Vol 896 ◽  
pp. 203-210
Author(s):  
Heri Sutanto ◽  
Iis Nurhasanah ◽  
Istadi Istadi ◽  
Priyono
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Mole Fraction ◽  
Spin Coating ◽  
Lattice Parameter ◽  
Nitrogen Vacancy ◽  
Spin Coating Technique ◽  
Carbon Impurity ◽  
X Ray ◽  
Coating Technique

The influence of Mn/Ga solution on the characteristics of solid composition and microstructure of GaN:Mn thin film was studied. GaN:Mn thin films were deposited on Si (111) substrate by the Chemical Solution Deposition (CSD) method using the spin coating technique. Variations of the Mn/Ga mole fraction were 4%, 6%, 8%, and 10% respectively. The GaN:Mn thin films were then heated at a temperature of 900°C for 2 hours in an N2environment with a constant flow rate of 120 sccm. Atomic composition, crystal structure, and surface morphology of GaN:Mn thin films were characterized using X-Ray Diffraction (XRD), Energy Dispersive of X-ray (EDX), and Scanning Electron Microscope (SEM). EDX results showed that the larger the Mn/Ga mole fraction solution, the higher the Mn At percentage is. The correlation of At Mn percentage and Mn/Ga solution mole fraction is represented by the formula y = 0.023x3- 0.352x2- 1.742x -2.81. All of the GaN:Mn thin films still have nitrogen vacancy, carbon impurity and maintain the wurtzite polycrystalline structure. Lattice parametera, which is in the range of 3.2077Å – 3.2621Å, and lattice parameterc,which is in the range of 5.1094Å – 5.3038Å, depend on Mn atomic percentage of the film. The Root Mean Square (RMS) of GaN:Mn thin film surface roughness is in the range of 15.3nm – 29.90nm. The grain size for the 6% Mn/Ga mole fraction thin film is homogeneous.

Structure and properties of the Mn doped CeO2 thin film grown on LaAlO3 (001) via a modified sol–gel spin-coating technique

2015 ◽  
Vol 640 ◽  
pp. 122-127 ◽  
Author(s):  
Waleed E. Mahmoud ◽  
A.A. Al-Ghamdi ◽  
F.A. Al-Agel ◽  
E. Al-Arfaj ◽  
F.S. Shokr ◽  
...  
Keyword(s):  
Thin Film ◽  
Spin Coating ◽  
Sol Gel ◽  
Spin Coating Technique ◽  
Structure And Properties ◽  
Coating Technique ◽  
Doped Ceo2 ◽  
Mn Doped
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