Synthesis of ZnO thin film by sol-gel spin coating technique for H 2 S gas sensing application

2017 ◽  
Vol 527 ◽  
pp. 7-15 ◽  
Author(s):  
Amol R. Nimbalkar ◽  
Maruti G. Patil
Keyword(s):  
Thin Film ◽  
Spin Coating ◽  
Gas Sensing ◽  
Sol Gel ◽  
Spin Coating Technique ◽  
Zno Thin Film ◽  
Coating Technique ◽  
Sensing Application

ZnO thin film prepared by a sol-gel spin coating technique for NO 2 detection

2018 ◽  
Vol 227 ◽  
pp. 53-60 ◽  
Author(s):  
Nilam B. Patil ◽  
Amol R. Nimbalkar ◽  
Maruti G. Patil
Keyword(s):  
Thin Film ◽  
Spin Coating ◽  
Sol Gel ◽  
Spin Coating Technique ◽  
Zno Thin Film ◽  
Coating Technique

Polycrystalline BiFeO3 thin film synthesized via sol-gel assisted spin coating technique for photosensitive application

2016 ◽  
Author(s):  
K. A. Bogle ◽  
R. D. Narwade ◽  
A. B. Phatangare ◽  
S. S. Dahiwale ◽  
M. P. Mahabole ◽  
...  
Keyword(s):  
Thin Film ◽  
Spin Coating ◽  
Sol Gel ◽  
Spin Coating Technique ◽  
Bifeo3 Thin Film ◽  
Coating Technique

scholarly journals Growth of Tin Oxide Thin Film by Aluminum and Fluorine Doping Using Spin Coating Sol-Gel Techniques

2019 ◽  
Vol 6 (1) ◽  
pp. 1
Author(s):  
Susilawati Susilawati ◽  
Aris Doyan ◽  
Lalu Muliyadi ◽  
Syamsul Hakim
Keyword(s):  
Thin Film ◽  
Thin Layer ◽  
Tin Oxide ◽  
Spin Coating ◽  
Sol Gel ◽  
Spin Coating Technique ◽  
Oxide Thin Film ◽  
Coating Technique ◽  
Materials Used ◽  
Film Making

Abstract: The growth of tin oxide thin film by Aluminum doping and Fluorine has been carried out with the sol-gel spin coating technique. The growth aims to determine the quality of the thin layer formed based on variations in doping aluminum and fluorine. The basic ingredients used were SnCl2.2H2O, while the doping materials used were Al (Aluminium) and F (Fluorine) with variations in dopant concentrations (0, 5, 10, 15, 20 and 25)%. The growth of a thin layer using measured glass (10x10x 3) mm as a substrate. The growth of thin films includes substrate preparation, sol-gel making, thin film making, and heating processes. The growth of thin layer was dripped on a glass substrate with sol-gel spin coating technique at 1 M sol concentration and treated with maturation for 24 hours. The next step is making a thin layer using a spin coater at a speed of 2000 rpm for 3 minutes. After that, the substrate is heated in an oven at 100°C for 60 minutes. The results showed that the transparency level of the tin oxide layer increases with increasing amounts of doping Aluminum and fluorine. Key words: Aluminum, Fluorine, Sol-gel, Spin Coating, Thin Film, Tin Oxide

Structure and properties of the Mn doped CeO2 thin film grown on LaAlO3 (001) via a modified sol–gel spin-coating technique

2015 ◽  
Vol 640 ◽  
pp. 122-127 ◽  
Author(s):  
Waleed E. Mahmoud ◽  
A.A. Al-Ghamdi ◽  
F.A. Al-Agel ◽  
E. Al-Arfaj ◽  
F.S. Shokr ◽  
...  
Keyword(s):  
Thin Film ◽  
Spin Coating ◽  
Sol Gel ◽  
Spin Coating Technique ◽  
Structure And Properties ◽  
Coating Technique ◽  
Doped Ceo2 ◽  
Mn Doped

scholarly journals Effect of iron doping on structural and optical properties of TiO2 thin film by sol–gel routed spin coating technique

2017 ◽  
Vol 07 (04) ◽  
pp. 1750024 ◽  
Author(s):  
Stephen Lourduraj ◽  
Rayar Victor Williams
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Optical Properties ◽  
Spin Coating ◽  
Sol Gel ◽  
Visible Region ◽  
Spin Coating Technique ◽  
Optical Measurements ◽  
Structural And Optical Properties ◽  
Coating Technique

Thin films of iron (Fe)-doped titanium dioxide (Fe:TiO[Formula: see text] were prepared by sol–gel spin coating technique and further calcined at 450[Formula: see text]C. The structural and optical properties of Fe-doped TiO2 thin films were investigated by X-ray diffraction (XRD), scanning electron microscopy (SEM), ultraviolet–visible spectroscopy (UV–vis) and atomic force microscopic (AFM) techniques. The XRD results confirm the nanostructured TiO2 thin films having crystalline nature with anatase phase. The characterization results show that the calcined thin films having high crystallinity and the effect of iron substitution lead to decreased crystallinity. The SEM investigations of Fe-doped TiO2 films also gave evidence that the films were continuous spherical shaped particles with a nanometric range of grain size and film was porous in nature. AFM analysis establishes that the uniformity of the TiO2 thin film with average roughness values. The optical measurements show that the films having high transparency in the visible region and the optical band gap energy of Fe-doped TiO2 film with iron (Fe) decrease with increase in iron content. These important requirements for the Fe:TiO2 films are to be used as window layers in solar cells.

scholarly journals Synthesis and Electrical Properties of ZnO-ITO and Al-ITO thin Film by Spin Coating Technique Through Sol Gel Process

2018 ◽  
Author(s):  
Hardeli ◽  
Harry Sanjaya ◽  
Rahadian Zainul
Keyword(s):  
Thin Film ◽  
Electrical Properties ◽  
Indium Tin Oxide ◽  
Spin Coating ◽  
Sol Gel ◽  
Thin Layers ◽  
Spin Coating Technique ◽  
Coating Technique ◽  
Sol Gel Process ◽  
Zno Doping

In this research we has investigated synthesis and electrical properties of ITO (Indium Tin Oxide) thin layers doping Aluminum (Al) and ZnO with spin-coating technique through sol-gel process and calcined at ±550 ºC for 1 hour. Effect of Al and ZnO doping on the conductivity of ITO with 0%, 1%, 3% and 5% w/v dopant concentration and the number of coating (4 and 5 layers) has reported. ITO-Al has 2 phases, these are rhombohedral and cubic, the crystal size is 67.31 nm. Meanwhile, ITO-ZnO are rhombohedral, cubic (bixbyite) and hexagonal (wurtzite), with crystallite size value was 67.4 nm. The surface morphology data indicated film thickness was 3.4 µm (ITO-Al) and 0.974 nm (ITO-ZnO). The electrical properties shows that the optimum film in 4 layers coating with the addition of 5% doping value was 17 kΩ/cm2 (ITO-Al) and 5-layered by addition of 5% of doping ZnO (80.800 kΩ/cm2). Meanwhile, ITO-Al thin film with 4 layers coating without doping was 9.331 kΩ / cm2, and for ITO-ZnO (5 layers) coating without doping was 11.796 kΩ/cm2. Al and ZnO doping decrease the electrical conductivity of ITO.

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