A review on low dimensional metal halides: Vapor phase epitaxy and physical properties

2017 ◽  
Vol 32 (21) ◽  
pp. 3992-4024 ◽  
Author(s):  
Yang Hu ◽  
Yuwei Guo ◽  
Yiping Wang ◽  
Zhizhong Chen ◽  
Xin Sun ◽  
...  
Keyword(s):  
Physical Properties ◽  
Vapor Phase ◽  
Vapor Phase Epitaxy ◽  
Metal Halides ◽  
Low Dimensional ◽  
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Abstract

scholarly journals Hydrogen and Nitrogen Ambient Effects on Epitaxial Lateral Overgrowth (ELO) of GaN VIA Metalorganic Vapor-Phase Epitaxy (Movpe)

1999 ◽  
Vol 4 (S1) ◽  
pp. 118-123 ◽  
Author(s):  
Kazuyuki Tadatomo ◽  
Yoichiro Ohuchi ◽  
Hiroaki Okagawa ◽  
Hirotaka Itoh ◽  
Hideto Miyake ◽  
...  
Keyword(s):  
Vapor Phase ◽  
Smooth Surface ◽  
Xrd Analysis ◽  
Metalorganic Vapor Phase Epitaxy ◽  
Vapor Phase Epitaxy ◽  
Epitaxial Lateral Overgrowth ◽  
Mixture Ratio ◽  
Lateral Overgrowth ◽  
Ambient Gases ◽  
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Ambient gas effect on the epitaxial lateral overgrowth (ELO) of GaN via metalorganic vapor-phase epitaxy (MOVPE) on a MOVPE-grown GaN (0001) / sapphire (0001) substrate with a SiO2 stripe mask has been studied by means of field-emission scanning electron microscopy (SEM) and highresolution X-ray diffraction (XRD) analysis. Different ambient gases of nitrogen, hydrogen and their mixture (mixture ratio, hydrogen : nitrogen = 1 : 1) affect the lateral overgrowth rate, the surface morphology and the crystalline tilting of ELO-GaN layers. XRD revealed that the ELO-GaN layer on the SiO2 mask aligned along the <100> direction exhibited anisotropic crystalline tilting toward <110>. For ELO-GaN growth in nitrogen ambient, the growth rate of the (0001) facet decreases, the lateral overgrowth rate increases and the tilting of the ELO-GaN layer increases, while no smooth surface is obtained, in comparison with ELO-GaN growth in hydrogen ambient. For the mixture ambient, a smooth surface with a fast lateral overgrowth rate is achieved and the dislocation density is not more than 107 cm−2, which is comparable to that in hydrogen ambient.

scholarly journals Selective Area Growth (SAG) and Epitaxial Lateral Overgrowth (ELO) of GaN using Tungsten Mask

1999 ◽  
Vol 4 (S1) ◽  
pp. 441-446 ◽  
Author(s):  
Yasutoshi Kawaguchi ◽  
Shingo Nambu ◽  
Hiroki Sone ◽  
Masahito Yamaguchi ◽  
Hideto Miyake ◽  
...  
Keyword(s):  
Vapor Phase ◽  
Vapor Phase Epitaxy ◽  
Hydride Vapor Phase Epitaxy ◽  
Epitaxial Lateral Overgrowth ◽  
Selective Area Growth ◽  
Crystal Axis ◽  
Lateral Overgrowth ◽  
Selective Area ◽  
Area Growth ◽  
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Selective area growth (SAG) and epitaxial lateral overgrowth (ELO) of GaN using tungsten (W) mask by metalorganic vapor phase epitaxy (MOVPE) and hydride vapor phase epitaxy (HVPE) have been studied. The selectivity of the GaN growth on the W mask as well as the SiO2 mask is excellent for both MOVPE and HVPE. The ELO-GaN layers are successfully obtained by HVPE on the stripe patterns along the <1 00> crystal axis with the W mask as well as the SiO2 mask. There are no voids between the SiO2 mask and the overgrown GaN layer, while there are triangular voids between the W mask and the overgrown layer. The surface of the ELO-GaN layer is quite uniform for both mask materials. In the case of MOVPE, the structures of ELO layers on the W mask are the same as those on the SiO2 mask for the <11 0> and <1 00> stripe patterns. No voids are observed between the W or SiO2 mask and the overgrown GaN layer by using MOVPE.

Large-scale facile-synthesis and bistable emissions of one-dimensional organic-inorganic C4H14N2PbBr4 metal halide crystals with bipolaronic states

2021 ◽  
Author(s):  
hui peng ◽  
ye tian ◽  
xinxin wang ◽  
shangfei yao ◽  
tao huang ◽  
...  
Keyword(s):  
Physical Properties ◽  
Mechanochemical Synthesis ◽  
Potential Application ◽  
Large Scale ◽  
Metal Halide ◽  
Metal Halides ◽  
Facile Synthesis ◽  
One Dimensional ◽  
Low Dimensional

Low-dimensional metal halides have attracted much attention because of its excellent physical properties and potential application in optoelectronic field. Herein, we developed a novel facile method based on mechanochemical synthesis...

Structural properties of InN films grown in different conditions by metalorganic vapor phase epitaxy

2011 ◽  
Vol 26 (6) ◽  
pp. 775-780
Author(s):  
Xiuhua Wang ◽  
Shanshan Chen ◽  
Wei Lin ◽  
Shuping Li ◽  
Hangyang Chen ◽  
...  
Keyword(s):  
Structural Properties ◽  
Vapor Phase ◽  
Metalorganic Vapor Phase Epitaxy ◽  
Vapor Phase Epitaxy ◽  
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Abstract

scholarly journals Structure of AlN on Si (111) Deposited with Metal Organic Vapor Phase Epitaxy

1999 ◽  
Vol 4 (S1) ◽  
pp. 322-326 ◽  
Author(s):  
Eric Rehder ◽  
M. Zhou ◽  
L. Zhang ◽  
N. R. Perkins ◽  
S. E. Babcock ◽  
...  
Keyword(s):  
Aspect Ratio ◽  
Vapor Phase ◽  
Secondary Ion Mass Spectrometry ◽  
High Energy ◽  
Film Structure ◽  
Vapor Phase Epitaxy ◽  
Cross Sectional ◽  
Organic Vapor ◽  
Metal Organic ◽  
Image Position

The surface morphology and structure of AlN deposited by metal organic vapor phase epitaxy (MOVPE) on Si (111) at growth temperatures ranging from 825 to 1175°C was investigated. Transmission electron microscopy (TEM), reflection high energy electron diffraction (RHEED), atomic force microscopy (AFM), and secondary ion mass spectrometry (SIMS) techniques were used to study the resulting film structure. Growth at high temperatures but less than ∼1100°C, resulted in a wire texture with some degree of in-plane alignment with (0001)AlN/ /(111)Si, < 10 0>AlN//< 11>Si, and 110>AlN//<10>Si. Deposition at temperatures greater than 1100°C results in single crystal films consisting of domains 60 nm across with an aspect ratio near unity. Growth below1100°C leads to degraded crystal quality with the grains developing random rotational misalignments around the AlN [0001] axis. Growth at lower temperatures produces islands elongated along the [110] direction. At the growth temperature of 825°C, the aspect ratio of the islands increased to 3 and a width of 25 nm. Cross-sectional TEM reveals that these islands are faceted due to slow growth on the {1 01}planes.

Effect of Magnesium and Silicon on the lateral overgrowth of GaN patterned substrates by Metal Organic Vapor Phase Epitaxy

1998 ◽  
Vol 3 ◽  
Author(s):  
S. Haffouz ◽  
B. Beaumont ◽  
Pierre Gibart
Keyword(s):  
Vapor Phase ◽  
Growth Conditions ◽  
Vapor Phase Epitaxy ◽  
The Other ◽  
Organic Vapor ◽  
Lateral Overgrowth ◽  
Metal Organic ◽  
Si Doped ◽  
Image Position ◽  
Mg Doped

Metalorganic vapor phase epitaxy was used to achieve selective regrowth of undoped, Mg- and Si-doped GaN on a silicon nitride patterned mask, capping a GaN epitaxial layer deposited on (0001) sapphire substrate. Hexagonal openings in the mask defined into 10 µm diameter circles separated by 5µm were used as a pattern for the present study. Uniform undoped and Mg-doped GaN hexagonal pyramids, delimited by C (0001) and R {101} facets, were achieved with a good selectivity. Si-doped GaN hexagonal pyramids delimited by vertical {100} facets and (0001) top facet were obtained for a high SiH4 flow rate in the vapor phase. We found that the GaN growth rates VR and VC, measured in the R <101> and C <0001> directions respectively, were drastically affected by the Mg and Si incorporation. By adjusting the Mg partial pressure in the growth chamber, the VR/VC ratio can be increased. Hence, the delimiting top C facet do not vanish as usually observed in undoped GaN selective regrowth but conversely expands. On the other hand, under proper growth conditions, 20µm-high Si-doped GaN columns were obtained.

Relationship between physical properties and gas purification in GaN grown by metalorganic vapor phase epitaxy

1998 ◽  
Vol 195 (1-4) ◽  
pp. 314-318 ◽  
Author(s):  
M.A di Forte-Poisson ◽  
F Huet ◽  
A Romann ◽  
M Tordjman ◽  
D Lancefield ◽  
...  
Keyword(s):  
Physical Properties ◽  
Vapor Phase ◽  
Metalorganic Vapor Phase Epitaxy ◽  
Vapor Phase Epitaxy ◽  
Gas Purification
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