scholarly journals Hetero-epitaxy of high quality germanium film on silicon substrate for optoelectronic integrated circuit applications

2017 ◽  
Vol 32 (21) ◽  
pp. 4025-4040 ◽  
Author(s):  
Kwang Hong Lee ◽  
Shuyu Bao ◽  
Yiding Lin ◽  
Wei Li ◽  
P Anantha ◽  
...  
Keyword(s):  
Integrated Circuit ◽  
Silicon Substrate ◽  
High Quality ◽  
Germanium Film ◽  
Image Position

Abstract

Heteroepitaxy of Ge on Cube-Textured Ni(001) Foils Through CaF2 Buffer Layer

MRS Advances ◽  
2016 ◽  
Vol 1 (43) ◽  
pp. 2947-2952
Author(s):  
L. Chen ◽  
Z.-H. Lu ◽  
T.-M. Lu ◽  
I. Bhat ◽  
S.B. Zhang ◽  
...  
Keyword(s):  
Buffer Layer ◽  
High Efficiency ◽  
Electron Backscatter Diffraction ◽  
Low Cost ◽  
High Quality ◽  
Tem Analysis ◽  
Transmission Electron ◽  
Electron Backscatter ◽  
Image Position ◽  
Backscatter Diffraction

ABSTRACTEpitaxial Ge films are useful as a substrate for high-efficiency solar cell applications. It is possible to grow epitaxial Ge films on low cost, cube textured Ni(001) sheets using CaF2(001) as a buffer layer. Transmission electron microscopy (TEM) analysis indicates that the CaF2(001) lattice has a 45o in-plane rotation relative to the Ni(001) lattice. The in-plane epitaxy relationships are CaF2[110]//Ni[100] and CaF2[$\bar 1$10]//Ni[010]. Energy dispersive spectroscopy (EDS) shows a sharp interface between Ge/CaF2 as well as between CaF2/Ni. Electron backscatter diffraction (EBSD) shows that the Ge(001) film has a large grain size (∼50 μm) with small angle grain boundaries (< 8o). The epitaxial Ge thin film has the potential to be used as a substrate to grow high quality III-V and II-VI semiconductors for optoelectronic applications.

Electrode Materials for Ferroelectric Capacitors: Properties of Reactive DC Sputtered IrO2 Thin Films

1996 ◽  
Vol 433 ◽  
Author(s):  
Venkatasubramani Balu ◽  
Tung-Sheng Chen ◽  
Bo Jiang ◽  
Shao-Hong Kuah ◽  
Jack C. Lee ◽  
...  
Keyword(s):  
Thin Films ◽  
Integrated Circuit ◽  
Electrode Materials ◽  
Optimum Process ◽  
Deposition Condition ◽  
Dc Magnetron Sputtering ◽  
Film Properties ◽  
High Quality ◽  
Excellent Thermal Stability ◽  
Ferroelectric Capacitors

AbstractDue to its low resistivity and excellent thermal stability, IrO2 has attracted attention as an alternative for electrode material in ferroelectric integrated circuit applications. In this work, IrO2 films deposited using reactive DC magnetron sputtering were studied. Film properties such as resistivity, crystallinity and morphology were examined as a function of deposition condition. Optimum process parameters to obtain high quality IrO2 thin films are suggested.

Large-area high-quality single crystal diamond

MRS Bulletin ◽  
2014 ◽  
Vol 39 (6) ◽  
pp. 504-510 ◽  
Author(s):  
Matthias Schreck ◽  
Jes Asmussen ◽  
Shinichi Shikata ◽  
Jean-Charles Arnault ◽  
Naoji Fujimori
Keyword(s):  
Single Crystal ◽  
Large Area ◽  
High Quality ◽  
High Quality Single Crystal ◽  
Single Crystal Diamond ◽  
Image Position

Abstract

Epitaxial growth and interfaces of high-quality InN films grown on nitrided sapphire substrates

2013 ◽  
Vol 28 (9) ◽  
pp. 1239-1244 ◽  
Author(s):  
Fangliang Gao ◽  
Yunfang Guan ◽  
Jingling Li ◽  
Junning Gao ◽  
Junqiu Guo ◽  
...  
Keyword(s):  
Epitaxial Growth ◽  
High Quality ◽  
Sapphire Substrates ◽  
Image Position

Abstract

Identification of Wet Chemical Deprocessing Induced Artifacts—A Common Problem Affecting All MOS and CMOS Technologies

2016 ◽  
Author(s):  
Raymond G. Mendaros ◽  
Christian Renan B. Marquez ◽  
Bernardino D. Mazon
Keyword(s):  
Electric Fields ◽  
Integrated Circuit ◽  
Silicon Substrate ◽  
Mechanical Damage ◽  
Embedded Structures ◽  
Physical Attributes ◽  
Wet Chemical ◽  
Fabrication Defects ◽  
High Electric Fields ◽  
Static Discharge

Abstract Wet Chemical Deprocessing is one of the techniques in exposing embedded structures in an integrated circuit (IC). Layers of the die from the passivation to silicon substrate can be selectively etched using this technique. From series of evaluations conducted, it was discovered that there are silicon damage sites that are induced during wet chemical deprocessing. Their physical attributes are almost identical to the attributes of electro-static discharge (ESD) defects. It only differs in the locations where they occur. ESD defects are expected near the edges of the transistors’ gate channel where high electric fields are present while deprocessing artifacts are observed at the center of the gate channel. Deprocessing artifacts are represented by mechanically induced damage sites in the silicon substrate. These mechanical damage sites manifest in the form of silicon pits, voids, slits and fractures as a result of tensional or shearing stresses in the silicon substrate when the polysilicons separate from the silicon substrate. If deprocessing artifacts are not well understood by the analysts then these can be mistakenly reported as ESD or fabrication defects.

scholarly journals Epitaxial Growth of III-Nitride Layers on Aluminum Nitride Substrates

1999 ◽  
Vol 4 (S1) ◽  
pp. 411-416 ◽  
Author(s):  
L.J. Schowalter ◽  
Y. Shusterman ◽  
R. Wang ◽  
I. Bhat ◽  
G. Arunmozhi ◽  
...  
Keyword(s):  
Epitaxial Growth ◽  
Electrical Characterization ◽  
High Quality ◽  
Force Microscopy ◽  
Ion Channeling ◽  
Atomic Force ◽  
Image Position ◽  
Nitride Layers ◽  
Very High

High quality, epitaxial growth of AlN and AlxGa1−xN by OMVPE has been demonstrated on single-crystal AlN substrates. Here we report characterization of epitaxial layers on an a-face AlN substrate using Rutherford Backscattering/ion channeling, atomic force microscopy (AFM), x-ray rocking curves, and preliminary electrical characterization. Ion channeling along the [100] axis gives a channeling minimum yield of 1.5% indicating a very high quality epitaxial layer.

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