scholarly journals Orientation dependence of swift heavy ion track formation in potassium titanyl phosphate

2016 ◽  
Vol 31 (15) ◽  
pp. 2329-2336 ◽  
Author(s):  
Yu-Jie Ma ◽  
Pablo Mota Santiago ◽  
Matias D. Rodriguez ◽  
Felipe Kremer ◽  
Daniel Schauries ◽  
...  
Keyword(s):  
Heavy Ion ◽  
Orientation Dependence ◽  
Potassium Titanyl Phosphate ◽  
Swift Heavy Ion ◽  
Track Formation ◽  
Image Position

Abstract

scholarly journals Characterization of swift heavy ion irradiation damage in ceria

2015 ◽  
Vol 30 (9) ◽  
pp. 1473-1484 ◽  
Author(s):  
Clarissa A. Yablinsky ◽  
Ram Devanathan ◽  
Janne Pakarinen ◽  
Jian Gan ◽  
Daniel Severin ◽  
...  
Keyword(s):  
Ion Irradiation ◽  
Heavy Ion ◽  
Irradiation Damage ◽  
Swift Heavy Ion Irradiation ◽  
Heavy Ion Irradiation ◽  
Swift Heavy Ion ◽  
Image Position

Abstract

Microstructure of Swift Heavy Ion Irradiated SiC, Si3N4 and AlN

2000 ◽  
Vol 650 ◽  
Author(s):  
S.J. Zinkle ◽  
J.W. Jones ◽  
V.A. Skuratov
Keyword(s):  
Room Temperature ◽  
Single Crystal Silicon ◽  
Heavy Ion ◽  
Stopping Power ◽  
Crystal Silicon ◽  
Swift Heavy Ion ◽  
Transmission Electron ◽  
Track Formation ◽  
Temperature Irradiation ◽  
Electronic Stopping Power

ABSTRACTCross-section transmission electron microscopy was used to investigate the microstructure of single crystal silicon carbide and polycrystalline silicon nitride and aluminum nitride following room temperature irradiation with either 245 MeV Kr or 710 MeV Bi ions. The fluences ranged from 1×1012/cm2 (single track regime) to 1×1013/cm2. Ion track formation was observed in the Bi ion-irradiated Si3N4 specimen in regions where the electronic stopping power exceeded a critical value of ∼15 keV/nm (depths <24 μm). Ion track formation was not observed at any depth in 245 MeV Kr ion-irradiated Si3N4, in which the maximum electronic stopping power was 14.5 keV/nm. There was no evidence for track formation in either SiC or AlN irradiated with 710 MeV Bi ions, which indicates that the threshold electronic stopping power for track formation in these two ceramics is >34 keV/nm. The high resistance of SiC and AlN to track formation may be due to their high thermal conductivity, but further study is needed to quantitatively evaluate the suitability of the various track formation models.

Swift heavy ion track formation in SrTiO3and TiO2under random, channeling and near-channeling conditions

2017 ◽  
Vol 50 (20) ◽  
pp. 205302 ◽  
Author(s):  
M Karlušić ◽  
M Jakšić ◽  
H Lebius ◽  
B Ban-d’Etat ◽  
R A Wilhelm ◽  
...  
Keyword(s):  
Heavy Ion ◽  
Swift Heavy Ion ◽  
Track Formation

Latent track formation in swift heavy ion irradiated MoS2 nanosheets

2018 ◽  
Author(s):  
Sanjeev Kumar ◽  
Jyoti Shakya ◽  
Tanmay Mahanta ◽  
Tanuja Mohanty
Keyword(s):  
Heavy Ion ◽  
Mos2 Nanosheets ◽  
Latent Track ◽  
Swift Heavy Ion ◽  
Track Formation

Swift heavy ion irradiation of InP: Thermal spike modeling of track formation

2006 ◽  
Vol 73 (18) ◽  
Author(s):  
A. Kamarou ◽  
W. Wesch ◽  
E. Wendler ◽  
A. Undisz ◽  
M. Rettenmayr
Keyword(s):  
Ion Irradiation ◽  
Heavy Ion ◽  
Thermal Spike ◽  
Swift Heavy Ion Irradiation ◽  
Heavy Ion Irradiation ◽  
Swift Heavy Ion ◽  
Track Formation

scholarly journals Swift heavy ion track formation in Gd2Zr2−Ti O7 pyrochlore: Effect of electronic energy loss

2014 ◽  
Vol 336 ◽  
pp. 102-115 ◽  
Author(s):  
Maik Lang ◽  
Marcel Toulemonde ◽  
Jiaming Zhang ◽  
Fuxiang Zhang ◽  
Cameron L. Tracy ◽  
...  
Keyword(s):  
Energy Loss ◽  
Heavy Ion ◽  
Electronic Energy ◽  
Swift Heavy Ion ◽  
Track Formation
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