Low temperature photoluminescence spectroscopy studies on sputter deposited CdS/CdTe junctions and solar cells

2016 ◽  
Vol 31 (2) ◽  
pp. 186-194 ◽  
Author(s):  
Mohit Tuteja ◽  
Prakash Koirala ◽  
Julio Soares ◽  
Robert Collins ◽  
Angus Rockett

Abstract

2008 ◽  
Vol 600-603 ◽  
pp. 437-440 ◽  
Author(s):  
John W. Steeds

A common set of optical centres found in photoluminescence spectra of electron irradiated 4H SiC is interpreted as originating in neutral carbon-vacancy carbon anti-site pairs.


2015 ◽  
Vol 119 (21) ◽  
pp. 11846-11851 ◽  
Author(s):  
Giulia Tregnago ◽  
Michael Wykes ◽  
Giuseppe M. Paternò ◽  
David Beljonne ◽  
Franco Cacialli

2012 ◽  
Vol 28 (3) ◽  
pp. 488-496 ◽  
Author(s):  
Jeremy H. Yune ◽  
Inna Karatchevtseva ◽  
Gerri Triani ◽  
Klaudia Wagner ◽  
David Officer

Abstract


2009 ◽  
Vol 1165 ◽  
Author(s):  
Sergiu A Vatavu ◽  
Hehong Zhao ◽  
Iuliana M Caraman ◽  
Petru A Gasin ◽  
Don L Morel ◽  
...  

AbstractTechnology variations involving Cu and Cl impurities are among the major performance influencing factors for CdS/CdTe thin film solar cells. CuCl and CdCl2 influence on the energetic diagram of impurity levels with respect to variation of deposition parameters has been investigated. A comparative analysis has been carried out by using low temperature photoluminescence (PL) studies (17-98K) of CdTe thin films in the device configuration (from CdS/CdTe inteface and CdTe sides). To study the effect of CuCl influence, as-deposited, annealed heterojunctions, with CuCl treatment of CdS have been investigated.


Molecules ◽  
2016 ◽  
Vol 21 (7) ◽  
pp. 885 ◽  
Author(s):  
Khaoula Jemli ◽  
Hiba Diab ◽  
Ferdinand Lédée ◽  
Gaelle Trippé-Allard ◽  
Damien Garrot ◽  
...  

2010 ◽  
Vol 645-648 ◽  
pp. 171-174 ◽  
Author(s):  
Jean Lorenzzi ◽  
Georgios Zoulis ◽  
Olivier Kim-Hak ◽  
Nikoletta Jegenyes ◽  
Davy Carole ◽  
...  

We report the results of a systematic investigation performed to reduce the residual n-type doping level of the 3C-SiC layers grown by the VLS mechanism on 6H-SiC(0001) on-axis substrate. This new approach, termed “High purity VLS” leads to low doped and low compensated material, which was confirmed by Raman and Low Temperature Photoluminescence spectroscopy. The resultant 3C morphology remains typical of single-domain layers and the n-type doping level could be estimated around 6x1016 cm-3.


1999 ◽  
Vol 60 (19) ◽  
pp. 13335-13338 ◽  
Author(s):  
V. Emiliani ◽  
Ch. Lienau ◽  
M. Hauert ◽  
G. Colí ◽  
M. DeGiorgi ◽  
...  

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